High performance n-MOSFETs with novel source/drain on selectively grown Ge on Si for monolithic integration

Hyun-Yong Yu, Masaharu Kobayashi, Woo Shik Jung, Ali K. Okyay, Yoshio Nishi, Krishna C. Saraswat

Research output: Chapter in Book/Report/Conference proceedingConference contribution

7 Citations (Scopus)

Abstract

We demonstrate high performance Ge n-MOSFETs with novel raised source/drain fabricated on high quality single crystal Ge selectively grown heteroepitaxially on Si using Multiple Hydrogen Anealing for Heteroepitaxy(MHAH) technique. Until now low source/drain series resistance in Ge n-MOSFETs has been a highly challenging problem. Source and drain are formed by implant-free, in-situ doping process for the purpose of very low series resistance and abrupt and shallow n+/p junctions. The novel n-MOSFETs show among the highest electron mobility reported on (100) Ge to-date. Furthermore, these devices provide an excellent Ion/Ioff ratio(4× 103) with very high Ion of 3.23μA/μm. These results show promise towards monolithic integration of Ge MOSFETs with Si CMOS VLSI platform.

Original languageEnglish
Title of host publicationTechnical Digest - International Electron Devices Meeting, IEDM
DOIs
Publication statusPublished - 2009 Dec 1
Externally publishedYes
Event2009 International Electron Devices Meeting, IEDM 2009 - Baltimore, MD, United States
Duration: 2009 Dec 72009 Dec 9

Other

Other2009 International Electron Devices Meeting, IEDM 2009
CountryUnited States
CityBaltimore, MD
Period09/12/709/12/9

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials
  • Materials Chemistry
  • Condensed Matter Physics

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    Yu, H-Y., Kobayashi, M., Jung, W. S., Okyay, A. K., Nishi, Y., & Saraswat, K. C. (2009). High performance n-MOSFETs with novel source/drain on selectively grown Ge on Si for monolithic integration. In Technical Digest - International Electron Devices Meeting, IEDM [5424245] https://doi.org/10.1109/IEDM.2009.5424245