High-Performance Quantum Dot Thin-Film Transistors with Environmentally Benign Surface Functionalization and Robust Defect Passivation

Su Min Jung, Han Lim Kang, Jong Kook Won, Jaehyun Kim, Chahwan Hwang, Kyunghan Ahn, In Chung, Byeong Kwon Ju, Myung Gil Kim, Sung Kyu Park

Research output: Contribution to journalArticle

4 Citations (Scopus)

Abstract

The recent development of high-performance colloidal quantum dot (QD) thin-film transistors (TFTs) has been achieved with removal of surface ligand, defect passivation, and facile electronic doping. Here, we report on high-performance solution-processed CdSe QD-TFTs with an optimized surface functionalization and robust defect passivation via hydrazine-free metal chalcogenide (MCC) ligands. The underlying mechanism of the ligand effects on CdSe QDs has been studied with hydrazine-free ex situ reaction derived MCC ligands, such as Sn2S6 4-, Sn2Se6 4-, and In2Se4 2-, to allow benign solution-process available. Furthermore, the defect passivation and remote n-type doping effects have been investigated by incorporating indium nanoparticles over the QD layer. Strong electronic coupling and solid defect passivation of QDs could be achieved by introducing electronically active MCC capping and thermal diffusion of the indium nanoparticles, respectively. It is also noteworthy that the diffused indium nanoparticles facilitate charge injection not only inter-QDs but also between source/drain electrodes and the QD semiconductors, significantly reducing contact resistance. With benign organic solvents, the Sn2S6 4-, Sn2Se6 4-, and In2Se4 2- ligand based QD-TFTs exhibited field-effect mobilities exceeding 4.8, 12.0, and 44.2 cm2/(V s), respectively. The results reported here imply that the incorporation of MCC ligands and appropriate dopants provide a general route to high-performance, extremely stable solution-processed QD-based electronic devices with marginal toxicity, offering compatibility with standard complementary metal oxide semiconductor processing and large-scale on-chip device applications.

Original languageEnglish
Pages (from-to)3739-3749
Number of pages11
JournalACS Applied Materials and Interfaces
Volume10
Issue number4
DOIs
Publication statusPublished - 2018 Jan 31

Fingerprint

Thin film transistors
Passivation
Semiconductor quantum dots
hydrazine
Ligands
Metals
Defects
Indium
Hydrazine
Doping (additives)
Nanoparticles
Charge injection
Thermal diffusion
Contact resistance
Organic solvents
Toxicity
Electrodes
Processing

Keywords

  • cadmium-selenide
  • doping
  • field-effect transistor
  • high mobility
  • metal chalcogenide
  • nonhydrazine
  • quantum dots
  • thermal diffusion

ASJC Scopus subject areas

  • Materials Science(all)

Cite this

High-Performance Quantum Dot Thin-Film Transistors with Environmentally Benign Surface Functionalization and Robust Defect Passivation. / Jung, Su Min; Kang, Han Lim; Won, Jong Kook; Kim, Jaehyun; Hwang, Chahwan; Ahn, Kyunghan; Chung, In; Ju, Byeong Kwon; Kim, Myung Gil; Park, Sung Kyu.

In: ACS Applied Materials and Interfaces, Vol. 10, No. 4, 31.01.2018, p. 3739-3749.

Research output: Contribution to journalArticle

Jung, Su Min ; Kang, Han Lim ; Won, Jong Kook ; Kim, Jaehyun ; Hwang, Chahwan ; Ahn, Kyunghan ; Chung, In ; Ju, Byeong Kwon ; Kim, Myung Gil ; Park, Sung Kyu. / High-Performance Quantum Dot Thin-Film Transistors with Environmentally Benign Surface Functionalization and Robust Defect Passivation. In: ACS Applied Materials and Interfaces. 2018 ; Vol. 10, No. 4. pp. 3739-3749.
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abstract = "The recent development of high-performance colloidal quantum dot (QD) thin-film transistors (TFTs) has been achieved with removal of surface ligand, defect passivation, and facile electronic doping. Here, we report on high-performance solution-processed CdSe QD-TFTs with an optimized surface functionalization and robust defect passivation via hydrazine-free metal chalcogenide (MCC) ligands. The underlying mechanism of the ligand effects on CdSe QDs has been studied with hydrazine-free ex situ reaction derived MCC ligands, such as Sn2S6 4-, Sn2Se6 4-, and In2Se4 2-, to allow benign solution-process available. Furthermore, the defect passivation and remote n-type doping effects have been investigated by incorporating indium nanoparticles over the QD layer. Strong electronic coupling and solid defect passivation of QDs could be achieved by introducing electronically active MCC capping and thermal diffusion of the indium nanoparticles, respectively. It is also noteworthy that the diffused indium nanoparticles facilitate charge injection not only inter-QDs but also between source/drain electrodes and the QD semiconductors, significantly reducing contact resistance. With benign organic solvents, the Sn2S6 4-, Sn2Se6 4-, and In2Se4 2- ligand based QD-TFTs exhibited field-effect mobilities exceeding 4.8, 12.0, and 44.2 cm2/(V s), respectively. The results reported here imply that the incorporation of MCC ligands and appropriate dopants provide a general route to high-performance, extremely stable solution-processed QD-based electronic devices with marginal toxicity, offering compatibility with standard complementary metal oxide semiconductor processing and large-scale on-chip device applications.",
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AU - Hwang, Chahwan

AU - Ahn, Kyunghan

AU - Chung, In

AU - Ju, Byeong Kwon

AU - Kim, Myung Gil

AU - Park, Sung Kyu

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KW - cadmium-selenide

KW - doping

KW - field-effect transistor

KW - high mobility

KW - metal chalcogenide

KW - nonhydrazine

KW - quantum dots

KW - thermal diffusion

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