High performance stretchable UV sensor arrays of SnO2 nanowires

Daeil Kim, Gunchul Shin, Jangyeol Yoon, Dongseok Jang, Seung Jung Lee, Goangseup Zi, Jeong Sook Ha

Research output: Contribution to journalArticle

26 Citations (Scopus)

Abstract

A high performance, stretchable UV sensor array was fabricated based on an active matrix (AM) device that combined field effect transistors of SWCNTs and SnO2 nanowires. The AM devices provided spatial UV sensing via the individual sensors in the array. SnO2 NW UV sensors showed an average photosensitivity of ∼105 and a photoconductive gain of ∼106 under very low UV (λ = 254 nm) power intensities of 0.02-0.04 mW cm-2. The UV sensing performance was not deteriorated by a prestrain of up to 23% induced by radial deformation, consistent with the mechanical analysis.

Original languageEnglish
Article number315502
JournalNanotechnology
Volume24
Issue number31
DOIs
Publication statusPublished - 2013 Aug 9

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Nanowires
Sensor arrays
Equipment and Supplies
Photosensitivity
Sensors
Field effect transistors

ASJC Scopus subject areas

  • Bioengineering
  • Chemistry(all)
  • Electrical and Electronic Engineering
  • Mechanical Engineering
  • Mechanics of Materials
  • Materials Science(all)

Cite this

High performance stretchable UV sensor arrays of SnO2 nanowires. / Kim, Daeil; Shin, Gunchul; Yoon, Jangyeol; Jang, Dongseok; Lee, Seung Jung; Zi, Goangseup; Ha, Jeong Sook.

In: Nanotechnology, Vol. 24, No. 31, 315502, 09.08.2013.

Research output: Contribution to journalArticle

Kim, Daeil ; Shin, Gunchul ; Yoon, Jangyeol ; Jang, Dongseok ; Lee, Seung Jung ; Zi, Goangseup ; Ha, Jeong Sook. / High performance stretchable UV sensor arrays of SnO2 nanowires. In: Nanotechnology. 2013 ; Vol. 24, No. 31.
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