High-Performance Transition Metal Dichalcogenide Photodetectors Enhanced by Self-Assembled Monolayer Doping

Dong Ho Kang, Myung Soo Kim, Jaewoo Shim, Jeaho Jeon, Hyung Youl Park, Woo Shik Jung, Hyun-Yong Yu, Chang Hyun Pang, Sungjoo Lee, Jin Hong Park

Research output: Contribution to journalArticle

114 Citations (Scopus)

Abstract

Most doping research into transition metal dichalcogenides (TMDs) has been mainly focused on the improvement of electronic device performance. Here, the effect of self-assembled monolayer (SAM)-based doping on the performance of WSe2- and MoS2-based transistors and photodetectors is investigated. The achieved doping concentrations are ≈1.4 × 1011 for octadecyltrichlorosilane (OTS) p-doping and ≈1011 for aminopropyltriethoxysilane (APTES) n-doping (nondegenerate). Using this SAM doping technique, the field-effect mobility is increased from 32.58 to 168.9 cm2 V-1 s in OTS/WSe2 transistors and from 28.75 to 142.2 cm2 V-1 s in APTES/MoS2 transistors. For the photodetectors, the responsivity is improved by a factor of ≈28.2 (from 517.2 to 1.45 × 104 A W-1) in the OTS/WSe2 devices and by a factor of ≈26.4 (from 219 to 5.75 × 103 A W-1) in the APTES/MoS2 devices. The enhanced photoresponsivity values are much higher than that of the previously reported TMD photodetectors. The detectivity enhancement is ≈26.6-fold in the OTS/WSe2 devices and ≈24.5-fold in the APTES/MoS2 devices and is caused by the increased photocurrent and maintained dark current after doping. The optoelectronic performance is also investigated with different optical powers and the air-exposure times. This doping study performed on TMD devices will play a significant role for optimizing the performance of future TMD-based electronic/optoelectronic applications.

Original languageEnglish
Pages (from-to)4219-4227
Number of pages9
JournalAdvanced Functional Materials
Volume25
Issue number27
DOIs
Publication statusPublished - 2015

Fingerprint

Self assembled monolayers
Photodetectors
Transition metals
photometers
transition metals
Doping (additives)
Transistors
transistors
Optoelectronic devices
Dark currents
dark current
Photocurrents
electronics
photocurrents
amino-propyl-triethoxysilane
octadecyltrichlorosilane
augmentation
air
Air

Keywords

  • device performance
  • dichalcogenides
  • doping
  • optoelectronic devices
  • semiconductors

ASJC Scopus subject areas

  • Biomaterials
  • Electrochemistry
  • Condensed Matter Physics
  • Electronic, Optical and Magnetic Materials

Cite this

Kang, D. H., Kim, M. S., Shim, J., Jeon, J., Park, H. Y., Jung, W. S., ... Park, J. H. (2015). High-Performance Transition Metal Dichalcogenide Photodetectors Enhanced by Self-Assembled Monolayer Doping. Advanced Functional Materials, 25(27), 4219-4227. https://doi.org/10.1002/adfm.201501170

High-Performance Transition Metal Dichalcogenide Photodetectors Enhanced by Self-Assembled Monolayer Doping. / Kang, Dong Ho; Kim, Myung Soo; Shim, Jaewoo; Jeon, Jeaho; Park, Hyung Youl; Jung, Woo Shik; Yu, Hyun-Yong; Pang, Chang Hyun; Lee, Sungjoo; Park, Jin Hong.

In: Advanced Functional Materials, Vol. 25, No. 27, 2015, p. 4219-4227.

Research output: Contribution to journalArticle

Kang, DH, Kim, MS, Shim, J, Jeon, J, Park, HY, Jung, WS, Yu, H-Y, Pang, CH, Lee, S & Park, JH 2015, 'High-Performance Transition Metal Dichalcogenide Photodetectors Enhanced by Self-Assembled Monolayer Doping', Advanced Functional Materials, vol. 25, no. 27, pp. 4219-4227. https://doi.org/10.1002/adfm.201501170
Kang, Dong Ho ; Kim, Myung Soo ; Shim, Jaewoo ; Jeon, Jeaho ; Park, Hyung Youl ; Jung, Woo Shik ; Yu, Hyun-Yong ; Pang, Chang Hyun ; Lee, Sungjoo ; Park, Jin Hong. / High-Performance Transition Metal Dichalcogenide Photodetectors Enhanced by Self-Assembled Monolayer Doping. In: Advanced Functional Materials. 2015 ; Vol. 25, No. 27. pp. 4219-4227.
@article{43f5058869da4a0f847be4794edc70c4,
title = "High-Performance Transition Metal Dichalcogenide Photodetectors Enhanced by Self-Assembled Monolayer Doping",
abstract = "Most doping research into transition metal dichalcogenides (TMDs) has been mainly focused on the improvement of electronic device performance. Here, the effect of self-assembled monolayer (SAM)-based doping on the performance of WSe2- and MoS2-based transistors and photodetectors is investigated. The achieved doping concentrations are ≈1.4 × 1011 for octadecyltrichlorosilane (OTS) p-doping and ≈1011 for aminopropyltriethoxysilane (APTES) n-doping (nondegenerate). Using this SAM doping technique, the field-effect mobility is increased from 32.58 to 168.9 cm2 V-1 s in OTS/WSe2 transistors and from 28.75 to 142.2 cm2 V-1 s in APTES/MoS2 transistors. For the photodetectors, the responsivity is improved by a factor of ≈28.2 (from 517.2 to 1.45 × 104 A W-1) in the OTS/WSe2 devices and by a factor of ≈26.4 (from 219 to 5.75 × 103 A W-1) in the APTES/MoS2 devices. The enhanced photoresponsivity values are much higher than that of the previously reported TMD photodetectors. The detectivity enhancement is ≈26.6-fold in the OTS/WSe2 devices and ≈24.5-fold in the APTES/MoS2 devices and is caused by the increased photocurrent and maintained dark current after doping. The optoelectronic performance is also investigated with different optical powers and the air-exposure times. This doping study performed on TMD devices will play a significant role for optimizing the performance of future TMD-based electronic/optoelectronic applications.",
keywords = "device performance, dichalcogenides, doping, optoelectronic devices, semiconductors",
author = "Kang, {Dong Ho} and Kim, {Myung Soo} and Jaewoo Shim and Jeaho Jeon and Park, {Hyung Youl} and Jung, {Woo Shik} and Hyun-Yong Yu and Pang, {Chang Hyun} and Sungjoo Lee and Park, {Jin Hong}",
year = "2015",
doi = "10.1002/adfm.201501170",
language = "English",
volume = "25",
pages = "4219--4227",
journal = "Advanced Functional Materials",
issn = "1616-301X",
publisher = "Wiley-VCH Verlag",
number = "27",

}

TY - JOUR

T1 - High-Performance Transition Metal Dichalcogenide Photodetectors Enhanced by Self-Assembled Monolayer Doping

AU - Kang, Dong Ho

AU - Kim, Myung Soo

AU - Shim, Jaewoo

AU - Jeon, Jeaho

AU - Park, Hyung Youl

AU - Jung, Woo Shik

AU - Yu, Hyun-Yong

AU - Pang, Chang Hyun

AU - Lee, Sungjoo

AU - Park, Jin Hong

PY - 2015

Y1 - 2015

N2 - Most doping research into transition metal dichalcogenides (TMDs) has been mainly focused on the improvement of electronic device performance. Here, the effect of self-assembled monolayer (SAM)-based doping on the performance of WSe2- and MoS2-based transistors and photodetectors is investigated. The achieved doping concentrations are ≈1.4 × 1011 for octadecyltrichlorosilane (OTS) p-doping and ≈1011 for aminopropyltriethoxysilane (APTES) n-doping (nondegenerate). Using this SAM doping technique, the field-effect mobility is increased from 32.58 to 168.9 cm2 V-1 s in OTS/WSe2 transistors and from 28.75 to 142.2 cm2 V-1 s in APTES/MoS2 transistors. For the photodetectors, the responsivity is improved by a factor of ≈28.2 (from 517.2 to 1.45 × 104 A W-1) in the OTS/WSe2 devices and by a factor of ≈26.4 (from 219 to 5.75 × 103 A W-1) in the APTES/MoS2 devices. The enhanced photoresponsivity values are much higher than that of the previously reported TMD photodetectors. The detectivity enhancement is ≈26.6-fold in the OTS/WSe2 devices and ≈24.5-fold in the APTES/MoS2 devices and is caused by the increased photocurrent and maintained dark current after doping. The optoelectronic performance is also investigated with different optical powers and the air-exposure times. This doping study performed on TMD devices will play a significant role for optimizing the performance of future TMD-based electronic/optoelectronic applications.

AB - Most doping research into transition metal dichalcogenides (TMDs) has been mainly focused on the improvement of electronic device performance. Here, the effect of self-assembled monolayer (SAM)-based doping on the performance of WSe2- and MoS2-based transistors and photodetectors is investigated. The achieved doping concentrations are ≈1.4 × 1011 for octadecyltrichlorosilane (OTS) p-doping and ≈1011 for aminopropyltriethoxysilane (APTES) n-doping (nondegenerate). Using this SAM doping technique, the field-effect mobility is increased from 32.58 to 168.9 cm2 V-1 s in OTS/WSe2 transistors and from 28.75 to 142.2 cm2 V-1 s in APTES/MoS2 transistors. For the photodetectors, the responsivity is improved by a factor of ≈28.2 (from 517.2 to 1.45 × 104 A W-1) in the OTS/WSe2 devices and by a factor of ≈26.4 (from 219 to 5.75 × 103 A W-1) in the APTES/MoS2 devices. The enhanced photoresponsivity values are much higher than that of the previously reported TMD photodetectors. The detectivity enhancement is ≈26.6-fold in the OTS/WSe2 devices and ≈24.5-fold in the APTES/MoS2 devices and is caused by the increased photocurrent and maintained dark current after doping. The optoelectronic performance is also investigated with different optical powers and the air-exposure times. This doping study performed on TMD devices will play a significant role for optimizing the performance of future TMD-based electronic/optoelectronic applications.

KW - device performance

KW - dichalcogenides

KW - doping

KW - optoelectronic devices

KW - semiconductors

UR - http://www.scopus.com/inward/record.url?scp=84948393414&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84948393414&partnerID=8YFLogxK

U2 - 10.1002/adfm.201501170

DO - 10.1002/adfm.201501170

M3 - Article

AN - SCOPUS:84948393414

VL - 25

SP - 4219

EP - 4227

JO - Advanced Functional Materials

JF - Advanced Functional Materials

SN - 1616-301X

IS - 27

ER -