High performance X-ray source using point-typed CNT field emitter

Sang Heon Lee, Jun Soo Han, Han Bin Go, Joohyun Jeon, Jun Hyeok Yang, Paul Kim, Cheol Jin Lee

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

The high performance cold cathode X-ray source was fabricated by using the point-typed CNT field emitter. The cold cathode X-ray source consists of the CNT point emitter, the metal mesh gate electrode, the metal hole focusing lens and the tungsten target anode electrode. To fabricate X-ray source, such components were mounted in a SUS vacuum chamber. The fabricated CNT X-ray source showed a good resolution of X-ray images at a low anode current and at a low anode voltage, and also indicated stable operation. We evaluated X-ray images according to the tube voltage and the tube current, respectively.

Original languageEnglish
Title of host publication2018 31st International Vacuum Nanoelectronics Conference, IVNC 2018
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)9781538657171
DOIs
Publication statusPublished - 2018 Nov 1
Event31st International Vacuum Nanoelectronics Conference, IVNC 2018 - Kyoto, Japan
Duration: 2018 Jul 92018 Jul 13

Other

Other31st International Vacuum Nanoelectronics Conference, IVNC 2018
CountryJapan
CityKyoto
Period18/7/918/7/13

Fingerprint

X rays
Anodes
Cathodes
Metals
Electrodes
Tungsten
Electric potential
Lenses
Vacuum

Keywords

  • carbon nanotube field emitter
  • cold cathode X-ray source
  • metal mesh gate electrode
  • point-typed field emitter
  • tungsten anode electrode
  • X-ray image

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Industrial and Manufacturing Engineering
  • Electronic, Optical and Magnetic Materials

Cite this

Lee, S. H., Han, J. S., Go, H. B., Jeon, J., Yang, J. H., Kim, P., & Lee, C. J. (2018). High performance X-ray source using point-typed CNT field emitter. In 2018 31st International Vacuum Nanoelectronics Conference, IVNC 2018 [8520211] Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/IVNC.2018.8520211

High performance X-ray source using point-typed CNT field emitter. / Lee, Sang Heon; Han, Jun Soo; Go, Han Bin; Jeon, Joohyun; Yang, Jun Hyeok; Kim, Paul; Lee, Cheol Jin.

2018 31st International Vacuum Nanoelectronics Conference, IVNC 2018. Institute of Electrical and Electronics Engineers Inc., 2018. 8520211.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Lee, SH, Han, JS, Go, HB, Jeon, J, Yang, JH, Kim, P & Lee, CJ 2018, High performance X-ray source using point-typed CNT field emitter. in 2018 31st International Vacuum Nanoelectronics Conference, IVNC 2018., 8520211, Institute of Electrical and Electronics Engineers Inc., 31st International Vacuum Nanoelectronics Conference, IVNC 2018, Kyoto, Japan, 18/7/9. https://doi.org/10.1109/IVNC.2018.8520211
Lee SH, Han JS, Go HB, Jeon J, Yang JH, Kim P et al. High performance X-ray source using point-typed CNT field emitter. In 2018 31st International Vacuum Nanoelectronics Conference, IVNC 2018. Institute of Electrical and Electronics Engineers Inc. 2018. 8520211 https://doi.org/10.1109/IVNC.2018.8520211
Lee, Sang Heon ; Han, Jun Soo ; Go, Han Bin ; Jeon, Joohyun ; Yang, Jun Hyeok ; Kim, Paul ; Lee, Cheol Jin. / High performance X-ray source using point-typed CNT field emitter. 2018 31st International Vacuum Nanoelectronics Conference, IVNC 2018. Institute of Electrical and Electronics Engineers Inc., 2018.
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