High post-annealing stability in [Pt/Co] multilayers

Tae Young Lee; Dong Su Son; Sang Ho Lim; Seong Rae Lee

doi:10.1063/1.4809130

High post-annealing stability in [Pt/Co] multilayers

Tae Young Lee, Dong Su Son, Sang Ho Lim, Seong Rae Lee

Department of Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

30 Citations (Scopus)

Abstract

The [Pt/Co] multilayers with a very thin Pt layer of 0.2 nm are presented that exhibit strong perpendicular magnetic anisotropy (PMA) even after annealing up to 500 °C. The observed post-annealing stability is in significant contrast to that previously shown for conventional multilayers with a thicker Pt layer than Co, where good PMA properties are obtained in the as-deposited state but they deteriorate significantly at moderate annealing temperatures below ∼300 °C. The reason for the high post-annealing stability is a low level of intermixing during sputtering due to the very thin Pt layer.

Original language	English
Article number	216102
Journal	Journal of Applied Physics
Volume	113
Issue number	21
DOIs	https://doi.org/10.1063/1.4809130
Publication status	Published - 2013 Jun 7

ASJC Scopus subject areas

Physics and Astronomy(all)

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@article{009fdee4d8b343a7a9df503fa347abc7,

title = "High post-annealing stability in [Pt/Co] multilayers",

abstract = "The [Pt/Co] multilayers with a very thin Pt layer of 0.2 nm are presented that exhibit strong perpendicular magnetic anisotropy (PMA) even after annealing up to 500 °C. The observed post-annealing stability is in significant contrast to that previously shown for conventional multilayers with a thicker Pt layer than Co, where good PMA properties are obtained in the as-deposited state but they deteriorate significantly at moderate annealing temperatures below ∼300 °C. The reason for the high post-annealing stability is a low level of intermixing during sputtering due to the very thin Pt layer.",

author = "Lee, {Tae Young} and Son, {Dong Su} and Lim, {Sang Ho} and Lee, {Seong Rae}",

note = "Funding Information: This work was supported by the National Research Foundation of Korea (NRF) grant funded by the Korea government (MEST) (2011-0028163)",

year = "2013",

month = jun,

day = "7",

doi = "10.1063/1.4809130",

language = "English",

volume = "113",

journal = "Journal of Applied Physics",

issn = "0021-8979",

publisher = "American Institute of Physics Publising LLC",

number = "21",

}

TY - JOUR

T1 - High post-annealing stability in [Pt/Co] multilayers

AU - Lee, Tae Young

AU - Son, Dong Su

AU - Lim, Sang Ho

AU - Lee, Seong Rae

N1 - Funding Information: This work was supported by the National Research Foundation of Korea (NRF) grant funded by the Korea government (MEST) (2011-0028163)

PY - 2013/6/7

Y1 - 2013/6/7

N2 - The [Pt/Co] multilayers with a very thin Pt layer of 0.2 nm are presented that exhibit strong perpendicular magnetic anisotropy (PMA) even after annealing up to 500 °C. The observed post-annealing stability is in significant contrast to that previously shown for conventional multilayers with a thicker Pt layer than Co, where good PMA properties are obtained in the as-deposited state but they deteriorate significantly at moderate annealing temperatures below ∼300 °C. The reason for the high post-annealing stability is a low level of intermixing during sputtering due to the very thin Pt layer.

AB - The [Pt/Co] multilayers with a very thin Pt layer of 0.2 nm are presented that exhibit strong perpendicular magnetic anisotropy (PMA) even after annealing up to 500 °C. The observed post-annealing stability is in significant contrast to that previously shown for conventional multilayers with a thicker Pt layer than Co, where good PMA properties are obtained in the as-deposited state but they deteriorate significantly at moderate annealing temperatures below ∼300 °C. The reason for the high post-annealing stability is a low level of intermixing during sputtering due to the very thin Pt layer.

UR - http://www.scopus.com/inward/record.url?scp=84879366513&partnerID=8YFLogxK

U2 - 10.1063/1.4809130

DO - 10.1063/1.4809130

M3 - Article

AN - SCOPUS:84879366513

SN - 0021-8979

VL - 113

JO - Journal of Applied Physics

JF - Journal of Applied Physics

IS - 21

M1 - 216102

ER -

High post-annealing stability in [Pt/Co] multilayers

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