Abstract
An front facet-low reflection coated broad-area laser(BAL) diode with an emitter size of 50 μm x 1 μm and a chip length of 2000 μm is operated in the external cavity diode laser(ECDL). For wavelength stabilization and narrow spectral width, the diffraction grating is used in a Littrow configuration. At an injection current of 1.5 A, a output power of 0.65 W with a slop efficiency of 0.85 A/W, which is comparable to those of a solitary BAL diode, could be achieved with a spectral width of 120pm which is about 77 % narrower as compared to a solitary BAL diode. The peak wavelength stability below 10 pm was obtained in the wide range of output power up to 0.65 W.
| Original language | English |
|---|---|
| Title of host publication | Proceedings of SPIE - The International Society for Optical Engineering |
| Publisher | SPIE |
| Volume | 9348 |
| ISBN (Print) | 9781628414387 |
| DOIs | |
| Publication status | Published - 2015 |
| Event | High-Power Diode Laser Technology and Applications XIII - San Francisco, United States Duration: 2015 Feb 8 → 2015 Feb 10 |
Other
| Other | High-Power Diode Laser Technology and Applications XIII |
|---|---|
| Country/Territory | United States |
| City | San Francisco |
| Period | 15/2/8 → 15/2/10 |
Keywords
- broad area laser(BAL) diode
- diffraction grating
- external cavity diode laser
- high output power
- Red emitting lasers
- spectral width
- wavelength locking
- wavelength stabilization
ASJC Scopus subject areas
- Applied Mathematics
- Computer Science Applications
- Electrical and Electronic Engineering
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics