High-power external cavity CW red laser diode

Hong Joo Song, Jun Ho Lee, Jiyeon Park, Jong Hwan Park, Hong Man Na, Jung ho Park

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)


An front facet-low reflection coated broad-area laser(BAL) diode with an emitter size of 50 μm x 1 μm and a chip length of 2000 μm is operated in the external cavity diode laser(ECDL). For wavelength stabilization and narrow spectral width, the diffraction grating is used in a Littrow configuration. At an injection current of 1.5 A, a output power of 0.65 W with a slop efficiency of 0.85 A/W, which is comparable to those of a solitary BAL diode, could be achieved with a spectral width of 120pm which is about 77 % narrower as compared to a solitary BAL diode. The peak wavelength stability below 10 pm was obtained in the wide range of output power up to 0.65 W.

Original languageEnglish
Title of host publicationProceedings of SPIE - The International Society for Optical Engineering
ISBN (Print)9781628414387
Publication statusPublished - 2015
EventHigh-Power Diode Laser Technology and Applications XIII - San Francisco, United States
Duration: 2015 Feb 82015 Feb 10


OtherHigh-Power Diode Laser Technology and Applications XIII
Country/TerritoryUnited States
CitySan Francisco


  • broad area laser(BAL) diode
  • diffraction grating
  • external cavity diode laser
  • high output power
  • Red emitting lasers
  • spectral width
  • wavelength locking
  • wavelength stabilization

ASJC Scopus subject areas

  • Applied Mathematics
  • Computer Science Applications
  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics


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