High power operations of 980 nm Ga0.8In0.2As/GaxIn1-xAs yP1-y/Ga0.51In0.49P/GaAs pump lasers prepared by multi-step metalorganic vapor phase epitaxial growth with ion implanted channels

Dong Hoon Jang, Jung Kee Lee, Kyung Hyun Park, Ho Sung Cho, Eun Soo Nam, Chul Soon Park, Jong In Shim, Jichai Jeong, Ki Tae Jeong, Soo Jin Park

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

The silicon (Si) or boron (B) implantation process in Ga0.8In0.2As/GaxIn1-xAs yP1-y/Ga0.51In0.49P/GaAs quantum well structures can be used not only for maintaining single lateral mode during high power operation but also for increasing the catastrophic optical damage (COD) level of 980 nm pump lasers. The fabricated 980 nm pump lasers with partially ion implanted channels after ridge waveguide structure formation exhibited high power operation up to 250 mW without any kink and beam steering. A photoluminescence peak shift of 70meV was obtained by 120keV Si-implantation and annealing at 900°C. Improvement of the COD level by a minimum of 1.65 times is obtained by forming transparent windows near facets by Si implantation and annealing. A highly nonradiative polycrystalline phase of the active area may be the major cause of COD failure in the Al-free 980 nm lasers.

Original languageEnglish
Pages (from-to)4756-4763
Number of pages8
JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume38
Issue number8 B
Publication statusPublished - 1999 Aug 15

Fingerprint

Vapor phase epitaxy
implantation
Pumps
pumps
vapor phases
damage
Silicon
Lasers
Ions
silicon
Annealing
lasers
Ridge waveguides
ions
annealing
beam steering
Semiconductor quantum wells
Boron
ridges
flat surfaces

Keywords

  • Beam steering
  • High power lasers
  • Implantation
  • Impurity-induced layer disordering (IILD)
  • Kink
  • Pump lasers
  • Quantum well

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

High power operations of 980 nm Ga0.8In0.2As/GaxIn1-xAs yP1-y/Ga0.51In0.49P/GaAs pump lasers prepared by multi-step metalorganic vapor phase epitaxial growth with ion implanted channels. / Jang, Dong Hoon; Lee, Jung Kee; Park, Kyung Hyun; Cho, Ho Sung; Nam, Eun Soo; Park, Chul Soon; Shim, Jong In; Jeong, Jichai; Jeong, Ki Tae; Park, Soo Jin.

In: Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, Vol. 38, No. 8 B, 15.08.1999, p. 4756-4763.

Research output: Contribution to journalArticle

Jang, Dong Hoon ; Lee, Jung Kee ; Park, Kyung Hyun ; Cho, Ho Sung ; Nam, Eun Soo ; Park, Chul Soon ; Shim, Jong In ; Jeong, Jichai ; Jeong, Ki Tae ; Park, Soo Jin. / High power operations of 980 nm Ga0.8In0.2As/GaxIn1-xAs yP1-y/Ga0.51In0.49P/GaAs pump lasers prepared by multi-step metalorganic vapor phase epitaxial growth with ion implanted channels. In: Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers. 1999 ; Vol. 38, No. 8 B. pp. 4756-4763.
@article{be19eb37b0ca49969dd59cfc6ce37759,
title = "High power operations of 980 nm Ga0.8In0.2As/GaxIn1-xAs yP1-y/Ga0.51In0.49P/GaAs pump lasers prepared by multi-step metalorganic vapor phase epitaxial growth with ion implanted channels",
abstract = "The silicon (Si) or boron (B) implantation process in Ga0.8In0.2As/GaxIn1-xAs yP1-y/Ga0.51In0.49P/GaAs quantum well structures can be used not only for maintaining single lateral mode during high power operation but also for increasing the catastrophic optical damage (COD) level of 980 nm pump lasers. The fabricated 980 nm pump lasers with partially ion implanted channels after ridge waveguide structure formation exhibited high power operation up to 250 mW without any kink and beam steering. A photoluminescence peak shift of 70meV was obtained by 120keV Si-implantation and annealing at 900°C. Improvement of the COD level by a minimum of 1.65 times is obtained by forming transparent windows near facets by Si implantation and annealing. A highly nonradiative polycrystalline phase of the active area may be the major cause of COD failure in the Al-free 980 nm lasers.",
keywords = "Beam steering, High power lasers, Implantation, Impurity-induced layer disordering (IILD), Kink, Pump lasers, Quantum well",
author = "Jang, {Dong Hoon} and Lee, {Jung Kee} and Park, {Kyung Hyun} and Cho, {Ho Sung} and Nam, {Eun Soo} and Park, {Chul Soon} and Shim, {Jong In} and Jichai Jeong and Jeong, {Ki Tae} and Park, {Soo Jin}",
year = "1999",
month = "8",
day = "15",
language = "English",
volume = "38",
pages = "4756--4763",
journal = "Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes",
issn = "0021-4922",
publisher = "Japan Society of Applied Physics",
number = "8 B",

}

TY - JOUR

T1 - High power operations of 980 nm Ga0.8In0.2As/GaxIn1-xAs yP1-y/Ga0.51In0.49P/GaAs pump lasers prepared by multi-step metalorganic vapor phase epitaxial growth with ion implanted channels

AU - Jang, Dong Hoon

AU - Lee, Jung Kee

AU - Park, Kyung Hyun

AU - Cho, Ho Sung

AU - Nam, Eun Soo

AU - Park, Chul Soon

AU - Shim, Jong In

AU - Jeong, Jichai

AU - Jeong, Ki Tae

AU - Park, Soo Jin

PY - 1999/8/15

Y1 - 1999/8/15

N2 - The silicon (Si) or boron (B) implantation process in Ga0.8In0.2As/GaxIn1-xAs yP1-y/Ga0.51In0.49P/GaAs quantum well structures can be used not only for maintaining single lateral mode during high power operation but also for increasing the catastrophic optical damage (COD) level of 980 nm pump lasers. The fabricated 980 nm pump lasers with partially ion implanted channels after ridge waveguide structure formation exhibited high power operation up to 250 mW without any kink and beam steering. A photoluminescence peak shift of 70meV was obtained by 120keV Si-implantation and annealing at 900°C. Improvement of the COD level by a minimum of 1.65 times is obtained by forming transparent windows near facets by Si implantation and annealing. A highly nonradiative polycrystalline phase of the active area may be the major cause of COD failure in the Al-free 980 nm lasers.

AB - The silicon (Si) or boron (B) implantation process in Ga0.8In0.2As/GaxIn1-xAs yP1-y/Ga0.51In0.49P/GaAs quantum well structures can be used not only for maintaining single lateral mode during high power operation but also for increasing the catastrophic optical damage (COD) level of 980 nm pump lasers. The fabricated 980 nm pump lasers with partially ion implanted channels after ridge waveguide structure formation exhibited high power operation up to 250 mW without any kink and beam steering. A photoluminescence peak shift of 70meV was obtained by 120keV Si-implantation and annealing at 900°C. Improvement of the COD level by a minimum of 1.65 times is obtained by forming transparent windows near facets by Si implantation and annealing. A highly nonradiative polycrystalline phase of the active area may be the major cause of COD failure in the Al-free 980 nm lasers.

KW - Beam steering

KW - High power lasers

KW - Implantation

KW - Impurity-induced layer disordering (IILD)

KW - Kink

KW - Pump lasers

KW - Quantum well

UR - http://www.scopus.com/inward/record.url?scp=0033175306&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0033175306&partnerID=8YFLogxK

M3 - Article

AN - SCOPUS:0033175306

VL - 38

SP - 4756

EP - 4763

JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

SN - 0021-4922

IS - 8 B

ER -