High power operations of 980 nm Ga0.8In0.2As/GaxIn1-xAs yP1-y/Ga0.51In0.49P/GaAs pump lasers prepared by multi-step metalorganic vapor phase epitaxial growth with ion implanted channels

Dong Hoon Jang, Jung Kee Lee, Kyung Hyun Park, Ho Sung Cho, Eun Soo Nam, Chul Soon Park, Jong In Shim, Ji Chai Jeong, Ki Tae Jeong, Soo Jin Park

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