High-power single-mode 1.3-μm InGaAsP-InGaAsP multiple-quantum-well laser diodes with wide apertures

Kyoung Chan Kim, Dong Kie Jang, Jung Il Lee, Tae Geun Kim, Woo Won Lee, Jeong Ho Kim, Eun Jeong Yang, Bon Jo Koo, Il Ki Han

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

A wide-aperture ridge waveguide structure was applied to 1.3-μm InGaAsP-InGaAsP multiple-quantum-well laser diodes (LDs) to increase their maximum kink-free output power under single-lateral-mode operations. As a result, a kink-free output power up to 140 mW and an external efficiency of 0.3 W/A were achieved from a single facet of the LD with a 7-μm-wide ridge top and a 1.5-mm-long uncoated cavity.

Original languageEnglish
Pages (from-to)1438-1440
Number of pages3
JournalIEEE Photonics Technology Letters
Volume21
Issue number19
DOIs
Publication statusPublished - 2009 Oct 7

Fingerprint

Quantum well lasers
quantum well lasers
Semiconductor quantum wells
Semiconductor lasers
ridges
apertures
semiconductor lasers
Ridge waveguides
output
flat surfaces
waveguides
cavities

Keywords

  • High-power
  • Multiple quantum well (MQW)
  • Single-mode laser diodes (LDs)
  • Wide aperture

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Atomic and Molecular Physics, and Optics
  • Electronic, Optical and Magnetic Materials

Cite this

High-power single-mode 1.3-μm InGaAsP-InGaAsP multiple-quantum-well laser diodes with wide apertures. / Kim, Kyoung Chan; Jang, Dong Kie; Lee, Jung Il; Kim, Tae Geun; Lee, Woo Won; Kim, Jeong Ho; Yang, Eun Jeong; Koo, Bon Jo; Han, Il Ki.

In: IEEE Photonics Technology Letters, Vol. 21, No. 19, 07.10.2009, p. 1438-1440.

Research output: Contribution to journalArticle

Kim, Kyoung Chan ; Jang, Dong Kie ; Lee, Jung Il ; Kim, Tae Geun ; Lee, Woo Won ; Kim, Jeong Ho ; Yang, Eun Jeong ; Koo, Bon Jo ; Han, Il Ki. / High-power single-mode 1.3-μm InGaAsP-InGaAsP multiple-quantum-well laser diodes with wide apertures. In: IEEE Photonics Technology Letters. 2009 ; Vol. 21, No. 19. pp. 1438-1440.
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