High-power single-mode 1.3-μm InGaAsP-InGaAsP multiple-quantum-well laser diodes with wide apertures

Kyoung Chan Kim, Dong Kie Jang, Jung Il Lee, Tae Geun Kim, Woo Won Lee, Jeong Ho Kim, Eun Jeong Yang, Bon Jo Koo, Il Ki Han

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

A wide-aperture ridge waveguide structure was applied to 1.3-μm InGaAsP-InGaAsP multiple-quantum-well laser diodes (LDs) to increase their maximum kink-free output power under single-lateral-mode operations. As a result, a kink-free output power up to 140 mW and an external efficiency of 0.3 W/A were achieved from a single facet of the LD with a 7-μm-wide ridge top and a 1.5-mm-long uncoated cavity.

Original languageEnglish
Pages (from-to)1438-1440
Number of pages3
JournalIEEE Photonics Technology Letters
Volume21
Issue number19
DOIs
Publication statusPublished - 2009 Oct 7

    Fingerprint

Keywords

  • High-power
  • Multiple quantum well (MQW)
  • Single-mode laser diodes (LDs)
  • Wide aperture

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Electrical and Electronic Engineering

Cite this

Kim, K. C., Jang, D. K., Lee, J. I., Kim, T. G., Lee, W. W., Kim, J. H., Yang, E. J., Koo, B. J., & Han, I. K. (2009). High-power single-mode 1.3-μm InGaAsP-InGaAsP multiple-quantum-well laser diodes with wide apertures. IEEE Photonics Technology Letters, 21(19), 1438-1440. https://doi.org/10.1109/LPT.2009.2028153