@article{5b8874c52f3c42f5b740ec7c767bc09f,
title = "High-power single-mode 1.3-μm InGaAsP-InGaAsP multiple-quantum-well laser diodes with wide apertures",
abstract = "A wide-aperture ridge waveguide structure was applied to 1.3-μm InGaAsP-InGaAsP multiple-quantum-well laser diodes (LDs) to increase their maximum kink-free output power under single-lateral-mode operations. As a result, a kink-free output power up to 140 mW and an external efficiency of 0.3 W/A were achieved from a single facet of the LD with a 7-μm-wide ridge top and a 1.5-mm-long uncoated cavity.",
keywords = "High-power, Multiple quantum well (MQW), Single-mode laser diodes (LDs), Wide aperture",
author = "Kim, {Kyoung Chan} and Jang, {Dong Kie} and Lee, {Jung Il} and Kim, {Tae Geun} and Lee, {Woo Won} and Kim, {Jeong Ho} and Yang, {Eun Jeong} and Koo, {Bon Jo} and Han, {Il Ki}",
note = "Funding Information: Manuscript received June 05, 2009; revised July 08, 2009. First published July 28, 2009; current version published September 18, 2009. This work was supported in part by the Ministry of Knowledge Economy under the IT Industry Foundation Program, in part by the Korea Foundation for International Cooperation of Science and Technology through a Grant provided by the Ministry of Education, Science and Technology under Project M60605000007-06A0500-00710, and in part by the Basic Science Research Program under the National Research Foundation of Korea Grant funded by the Ministry of Education, Science and Technology (Quntum Photonic Science Research Center).",
year = "2009",
doi = "10.1109/LPT.2009.2028153",
language = "English",
volume = "21",
pages = "1438--1440",
journal = "IEEE Photonics Technology Letters",
issn = "1041-1135",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
number = "19",
}