High-purity CdMnTe radiation detectors: A high-resolution spectroscopic evaluation

R. Rafiei, M. I. Reinhard, Kihyun Kim, D. A. Prokopovich, D. Boardman, A. Sarbutt, G. C. Watt, A. E. Bolotnikov, L. J. Bignell, R. B. James

Research output: Contribution to journalArticle

14 Citations (Scopus)

Abstract

The charge transport properties of a high-purity CdMnTe (CMT) crystal have been measured at room temperature down to a micron-scale resolution. The CMT crystal, doped with indium, was grown by the vertical Bridgman technique. To reduce the residual impurities in the Mn source material, the growth process incorporated a five-times purification process of MnTe by a zone-refining method with molten Te solvent. The resulting 2.6 mm thick crystal exhibited an electron mobility-lifetime product of μnτn=2. 9× 10-3 cm2 V-1. The velocity of electron drift was calculated from the rise time distribution of the preamplifier's output pulses at each measured bias. The electron mobility was extracted from the electric field dependence of the drift velocity and at room temperature it has a value of μn=(950±90)cm2/Vs. High-resolution maps of the charge collection efficiency have been measured using a scanning microbeam of 5.5 MeV 4He2+ ions focused to a beam diameter < 1μm and display large-area spatial uniformity. The evolution of charge collection uniformity across the detector has been highlighted by acquiring measurements at applied biases ranging between 50 V and 1100 V. Charge transport inhomogeneity has been associated with the presence of bulk defects. It has been demonstrated that minimizing the content of impurities in the MnTe source material is highly effective in achieving major improvements in the CMT detector's performance as compared to previous data.

Original languageEnglish
Article number6496278
Pages (from-to)1450-1456
Number of pages7
JournalIEEE Transactions on Nuclear Science
Volume60
Issue number2
DOIs
Publication statusPublished - 2013 Feb 12

Fingerprint

Radiation detectors
radiation detectors
electron mobility
purity
Electron mobility
impurities
zone melting
Crystals
microbeams
Charge transfer
evaluation
high resolution
preamplifiers
detectors
room temperature
doped crystals
purification
Impurities
crystals
Detectors

Keywords

  • Carrier lifetime
  • CdMnTe
  • Charge collection efficiency
  • CMT
  • Compound semiconductor radiation detector
  • Crystal growth
  • Drift velocity
  • IBIC
  • Manganese purity
  • Mobility
  • Mobility-lifetime

ASJC Scopus subject areas

  • Nuclear and High Energy Physics
  • Nuclear Energy and Engineering
  • Electrical and Electronic Engineering

Cite this

Rafiei, R., Reinhard, M. I., Kim, K., Prokopovich, D. A., Boardman, D., Sarbutt, A., ... James, R. B. (2013). High-purity CdMnTe radiation detectors: A high-resolution spectroscopic evaluation. IEEE Transactions on Nuclear Science, 60(2), 1450-1456. [6496278]. https://doi.org/10.1109/TNS.2013.2243167

High-purity CdMnTe radiation detectors : A high-resolution spectroscopic evaluation. / Rafiei, R.; Reinhard, M. I.; Kim, Kihyun; Prokopovich, D. A.; Boardman, D.; Sarbutt, A.; Watt, G. C.; Bolotnikov, A. E.; Bignell, L. J.; James, R. B.

In: IEEE Transactions on Nuclear Science, Vol. 60, No. 2, 6496278, 12.02.2013, p. 1450-1456.

Research output: Contribution to journalArticle

Rafiei, R, Reinhard, MI, Kim, K, Prokopovich, DA, Boardman, D, Sarbutt, A, Watt, GC, Bolotnikov, AE, Bignell, LJ & James, RB 2013, 'High-purity CdMnTe radiation detectors: A high-resolution spectroscopic evaluation', IEEE Transactions on Nuclear Science, vol. 60, no. 2, 6496278, pp. 1450-1456. https://doi.org/10.1109/TNS.2013.2243167
Rafiei R, Reinhard MI, Kim K, Prokopovich DA, Boardman D, Sarbutt A et al. High-purity CdMnTe radiation detectors: A high-resolution spectroscopic evaluation. IEEE Transactions on Nuclear Science. 2013 Feb 12;60(2):1450-1456. 6496278. https://doi.org/10.1109/TNS.2013.2243167
Rafiei, R. ; Reinhard, M. I. ; Kim, Kihyun ; Prokopovich, D. A. ; Boardman, D. ; Sarbutt, A. ; Watt, G. C. ; Bolotnikov, A. E. ; Bignell, L. J. ; James, R. B. / High-purity CdMnTe radiation detectors : A high-resolution spectroscopic evaluation. In: IEEE Transactions on Nuclear Science. 2013 ; Vol. 60, No. 2. pp. 1450-1456.
@article{397ceb4d609e4011b72779e56deff86d,
title = "High-purity CdMnTe radiation detectors: A high-resolution spectroscopic evaluation",
abstract = "The charge transport properties of a high-purity CdMnTe (CMT) crystal have been measured at room temperature down to a micron-scale resolution. The CMT crystal, doped with indium, was grown by the vertical Bridgman technique. To reduce the residual impurities in the Mn source material, the growth process incorporated a five-times purification process of MnTe by a zone-refining method with molten Te solvent. The resulting 2.6 mm thick crystal exhibited an electron mobility-lifetime product of μnτn=2. 9× 10-3 cm2 V-1. The velocity of electron drift was calculated from the rise time distribution of the preamplifier's output pulses at each measured bias. The electron mobility was extracted from the electric field dependence of the drift velocity and at room temperature it has a value of μn=(950±90)cm2/Vs. High-resolution maps of the charge collection efficiency have been measured using a scanning microbeam of 5.5 MeV 4He2+ ions focused to a beam diameter < 1μm and display large-area spatial uniformity. The evolution of charge collection uniformity across the detector has been highlighted by acquiring measurements at applied biases ranging between 50 V and 1100 V. Charge transport inhomogeneity has been associated with the presence of bulk defects. It has been demonstrated that minimizing the content of impurities in the MnTe source material is highly effective in achieving major improvements in the CMT detector's performance as compared to previous data.",
keywords = "Carrier lifetime, CdMnTe, Charge collection efficiency, CMT, Compound semiconductor radiation detector, Crystal growth, Drift velocity, IBIC, Manganese purity, Mobility, Mobility-lifetime",
author = "R. Rafiei and Reinhard, {M. I.} and Kihyun Kim and Prokopovich, {D. A.} and D. Boardman and A. Sarbutt and Watt, {G. C.} and Bolotnikov, {A. E.} and Bignell, {L. J.} and James, {R. B.}",
year = "2013",
month = "2",
day = "12",
doi = "10.1109/TNS.2013.2243167",
language = "English",
volume = "60",
pages = "1450--1456",
journal = "IEEE Transactions on Nuclear Science",
issn = "0018-9499",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
number = "2",

}

TY - JOUR

T1 - High-purity CdMnTe radiation detectors

T2 - A high-resolution spectroscopic evaluation

AU - Rafiei, R.

AU - Reinhard, M. I.

AU - Kim, Kihyun

AU - Prokopovich, D. A.

AU - Boardman, D.

AU - Sarbutt, A.

AU - Watt, G. C.

AU - Bolotnikov, A. E.

AU - Bignell, L. J.

AU - James, R. B.

PY - 2013/2/12

Y1 - 2013/2/12

N2 - The charge transport properties of a high-purity CdMnTe (CMT) crystal have been measured at room temperature down to a micron-scale resolution. The CMT crystal, doped with indium, was grown by the vertical Bridgman technique. To reduce the residual impurities in the Mn source material, the growth process incorporated a five-times purification process of MnTe by a zone-refining method with molten Te solvent. The resulting 2.6 mm thick crystal exhibited an electron mobility-lifetime product of μnτn=2. 9× 10-3 cm2 V-1. The velocity of electron drift was calculated from the rise time distribution of the preamplifier's output pulses at each measured bias. The electron mobility was extracted from the electric field dependence of the drift velocity and at room temperature it has a value of μn=(950±90)cm2/Vs. High-resolution maps of the charge collection efficiency have been measured using a scanning microbeam of 5.5 MeV 4He2+ ions focused to a beam diameter < 1μm and display large-area spatial uniformity. The evolution of charge collection uniformity across the detector has been highlighted by acquiring measurements at applied biases ranging between 50 V and 1100 V. Charge transport inhomogeneity has been associated with the presence of bulk defects. It has been demonstrated that minimizing the content of impurities in the MnTe source material is highly effective in achieving major improvements in the CMT detector's performance as compared to previous data.

AB - The charge transport properties of a high-purity CdMnTe (CMT) crystal have been measured at room temperature down to a micron-scale resolution. The CMT crystal, doped with indium, was grown by the vertical Bridgman technique. To reduce the residual impurities in the Mn source material, the growth process incorporated a five-times purification process of MnTe by a zone-refining method with molten Te solvent. The resulting 2.6 mm thick crystal exhibited an electron mobility-lifetime product of μnτn=2. 9× 10-3 cm2 V-1. The velocity of electron drift was calculated from the rise time distribution of the preamplifier's output pulses at each measured bias. The electron mobility was extracted from the electric field dependence of the drift velocity and at room temperature it has a value of μn=(950±90)cm2/Vs. High-resolution maps of the charge collection efficiency have been measured using a scanning microbeam of 5.5 MeV 4He2+ ions focused to a beam diameter < 1μm and display large-area spatial uniformity. The evolution of charge collection uniformity across the detector has been highlighted by acquiring measurements at applied biases ranging between 50 V and 1100 V. Charge transport inhomogeneity has been associated with the presence of bulk defects. It has been demonstrated that minimizing the content of impurities in the MnTe source material is highly effective in achieving major improvements in the CMT detector's performance as compared to previous data.

KW - Carrier lifetime

KW - CdMnTe

KW - Charge collection efficiency

KW - CMT

KW - Compound semiconductor radiation detector

KW - Crystal growth

KW - Drift velocity

KW - IBIC

KW - Manganese purity

KW - Mobility

KW - Mobility-lifetime

UR - http://www.scopus.com/inward/record.url?scp=84876298764&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84876298764&partnerID=8YFLogxK

U2 - 10.1109/TNS.2013.2243167

DO - 10.1109/TNS.2013.2243167

M3 - Article

AN - SCOPUS:84876298764

VL - 60

SP - 1450

EP - 1456

JO - IEEE Transactions on Nuclear Science

JF - IEEE Transactions on Nuclear Science

SN - 0018-9499

IS - 2

M1 - 6496278

ER -