High-quality Cu-Ni solid solution/Ag ohmic contacts for flip-chip light-emitting diodes

Dong Seok Leem, June O. Song, J. S. Kwak, Y. Park, Tae Yeon Seong

Research output: Contribution to journalArticle

11 Citations (Scopus)

Abstract

Very low resistance and reflective Cu-Ni solid solution/Ag ohmic contacts to p-GaN for flip-chip light-emitting diodes (LEDs) were investigated. The Cu-Ni solid solution/Ag contacts produce specific contact resistance of 10 -5 to 10-6 Ω cm2 when annealed at 450 and 550°C for 1 min in air. LEDs fabricated with the annealed Cu-Ni solid solution/Ag contact layers give lower forward-bias voltages of 3.18-3.20 V at 20 mA. The light output power of LEDs with the Cu-Ni solid solution/Ag contact layer is higher than that of the Cu/Ag contact LEDs.

Original languageEnglish
JournalElectrochemical and Solid-State Letters
Volume7
Issue number10
DOIs
Publication statusPublished - 2004 Nov 22
Externally publishedYes

Fingerprint

Ohmic contacts
Light emitting diodes
electric contacts
Solid solutions
solid solutions
light emitting diodes
chips
low resistance
Contact resistance
Bias voltage
contact resistance
output
air
electric potential
Air

ASJC Scopus subject areas

  • Electrochemistry
  • Materials Science(all)

Cite this

High-quality Cu-Ni solid solution/Ag ohmic contacts for flip-chip light-emitting diodes. / Leem, Dong Seok; Song, June O.; Kwak, J. S.; Park, Y.; Seong, Tae Yeon.

In: Electrochemical and Solid-State Letters, Vol. 7, No. 10, 22.11.2004.

Research output: Contribution to journalArticle

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