High-quality GaN epilayer grown by newly designed horizontal counter-flow MOCVD reactor

Cheul Ro Lee, Sung Jin Son, In-Hwan Lee, Jae Young Leem, Sam Kyu Noh

Research output: Contribution to journalArticle

24 Citations (Scopus)

Abstract

We have fabricated a newly designed horizontal counter-flow reactor for growing high-quality III-V nitrides and characterized the GaN/sapphire(0 0 0 1) grown in it. The surface morphology of the film was featureless and smooth without any defects such as hillocks or truncated hexagonals. The measured background concentration and carrier mobility of the film 1.5 m thick are 4 × 1017/cm3 and 180 cm2/V s, respectively. The defect density measured by TEM is about 1 × 109/cm2 and the FWHM of DCX-ray curving is 336 arcsec, respectively. This crystallinity is similar to what was commonly obtained for GaN on sapphire until recently. The FWHM of the band-edge emission peak measured by PL at room temperature is typically around 14 and 4 meV for the main extonic peak(DBE) at 10 K. Except DBE at 3.490 eV, two minor structures are detected on the high-energy and low-energy shoulder of DBE at 3.498 eV(FE) and 3.483(ABE).

Original languageEnglish
Pages (from-to)11-16
Number of pages6
JournalJournal of Crystal Growth
Volume182
Issue number1-2
DOIs
Publication statusPublished - 1997 Jan 1

Fingerprint

counterflow
Aluminum Oxide
Epilayers
Metallorganic chemical vapor deposition
Full width at half maximum
Sapphire
metalorganic chemical vapor deposition
sapphire
reactors
Defect density
Carrier mobility
defects
shoulders
carrier mobility
Nitrides
nitrides
Surface morphology
crystallinity
rays
Transmission electron microscopy

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry

Cite this

High-quality GaN epilayer grown by newly designed horizontal counter-flow MOCVD reactor. / Lee, Cheul Ro; Son, Sung Jin; Lee, In-Hwan; Leem, Jae Young; Noh, Sam Kyu.

In: Journal of Crystal Growth, Vol. 182, No. 1-2, 01.01.1997, p. 11-16.

Research output: Contribution to journalArticle

Lee, Cheul Ro ; Son, Sung Jin ; Lee, In-Hwan ; Leem, Jae Young ; Noh, Sam Kyu. / High-quality GaN epilayer grown by newly designed horizontal counter-flow MOCVD reactor. In: Journal of Crystal Growth. 1997 ; Vol. 182, No. 1-2. pp. 11-16.
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