High quality non-alloyed Pt ohmic contacts to p-type GaN using two-step surface treatment

Ja Soon Jang, Seong Ju Park, Tae Yeon Seong

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Two-step surface-treatment is introduced to obtain low resistance Pt contacts to p-type GaN. The first step is performed after the mesa etching process using buffered oxide etch (BOE) and ammonium sulfide [(NH 4) 2S x]. This is followed by the second step using BOE. The Pt contact, which was treated sequentially using ultrasonically boiled BOE (10 min) and boiled (NH 4) 2S x (10 min), produces a specific contact resistance of 3.0 (±3.8)×10 -5 Ωcm 2. However, the contact, that was simply BOE-treated, yields 3.1 (±1.1)×10 -2 Ωcm 2. This indicates that the two-step surface treatment is promising technique for obtaining high quality ohmic contacts to p-GaN. Investigation of the electronic transport mechanisms using current-voltage-temperature (I-V-T) data indicates that thermionic field emission is dominant in the surface-treated Pt contacts.

Original languageEnglish
Title of host publicationMaterials Research Society Symposium - Proceedings
PublisherMaterials Research Society
Volume595
Publication statusPublished - 2000
Externally publishedYes
EventThe 1999 MRS Fall Meeting - Symposium W 'GaN and Related Alloys' - Boston, MA, USA
Duration: 1999 Nov 281999 Dec 3

Other

OtherThe 1999 MRS Fall Meeting - Symposium W 'GaN and Related Alloys'
CityBoston, MA, USA
Period99/11/2899/12/3

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ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials

Cite this

Jang, J. S., Park, S. J., & Seong, T. Y. (2000). High quality non-alloyed Pt ohmic contacts to p-type GaN using two-step surface treatment. In Materials Research Society Symposium - Proceedings (Vol. 595). Materials Research Society.