High quality non-alloyed Pt ohmic contacts to p-type GaN using two-step surface treatment

Ja Soon Jang; Seong Ju Park; Tae Yeon Seong

High quality non-alloyed Pt ohmic contacts to p-type GaN using two-step surface treatment

Ja Soon Jang, Seong Ju Park, Tae Yeon Seong

Research output: Contribution to journal › Conference article › peer-review

Abstract

Two-step surface-treatment is introduced to obtain low resistance Pt contacts to p-type GaN. The first step is performed after the mesa etching process using buffered oxide etch (BOE) and ammonium sulfide [(NH₄)₂S_x]. This is followed by the second step using BOE. The Pt contact, which was treated sequentially using ultrasonically boiled BOE (10 min) and boiled (NH₄)₂S_x (10 min), produces a specific contact resistance of 3.0 (±3.8)×10^-5 Ωcm². However, the contact, that was simply BOE-treated, yields 3.1 (±1.1)×10^-2 Ωcm². This indicates that the two-step surface treatment is promising technique for obtaining high quality ohmic contacts to p-GaN. Investigation of the electronic transport mechanisms using current-voltage-temperature (I-V-T) data indicates that thermionic field emission is dominant in the surface-treated Pt contacts.

Original language	English
Pages (from-to)	W10.4.1 - W10.4.6
Journal	Materials Research Society Symposium - Proceedings
Volume	595
Publication status	Published - 2000
Externally published	Yes
Event	The 1999 MRS Fall Meeting - Symposium W 'GaN and Related Alloys' - Boston, MA, USA Duration: 1999 Nov 28 → 1999 Dec 3

ASJC Scopus subject areas

Materials Science(all)
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

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@article{2f3965f2fd6248e59224643b25fb1fe1,

title = "High quality non-alloyed Pt ohmic contacts to p-type GaN using two-step surface treatment",

abstract = "Two-step surface-treatment is introduced to obtain low resistance Pt contacts to p-type GaN. The first step is performed after the mesa etching process using buffered oxide etch (BOE) and ammonium sulfide [(NH4)2Sx]. This is followed by the second step using BOE. The Pt contact, which was treated sequentially using ultrasonically boiled BOE (10 min) and boiled (NH4)2Sx (10 min), produces a specific contact resistance of 3.0 (±3.8)×10-5 Ωcm2. However, the contact, that was simply BOE-treated, yields 3.1 (±1.1)×10-2 Ωcm2. This indicates that the two-step surface treatment is promising technique for obtaining high quality ohmic contacts to p-GaN. Investigation of the electronic transport mechanisms using current-voltage-temperature (I-V-T) data indicates that thermionic field emission is dominant in the surface-treated Pt contacts.",

author = "Jang, {Ja Soon} and Park, {Seong Ju} and Seong, {Tae Yeon}",

note = "Funding Information: This work was supported by Korea Ministry of Information and Communications (C1-98-0929) and Critical Technology 21 (Development of Power Semiconductors) (98-N5-01-01-A-08).; The 1999 MRS Fall Meeting - Symposium W 'GaN and Related Alloys' ; Conference date: 28-11-1999 Through 03-12-1999",

year = "2000",

language = "English",

volume = "595",

pages = "W10.4.1 -- W10.4.6",

journal = "Materials Research Society Symposium Proceedings",

issn = "0272-9172",

publisher = "Materials Research Society",

}

TY - JOUR

T1 - High quality non-alloyed Pt ohmic contacts to p-type GaN using two-step surface treatment

AU - Jang, Ja Soon

AU - Park, Seong Ju

AU - Seong, Tae Yeon

N1 - Funding Information: This work was supported by Korea Ministry of Information and Communications (C1-98-0929) and Critical Technology 21 (Development of Power Semiconductors) (98-N5-01-01-A-08).

PY - 2000

Y1 - 2000

N2 - Two-step surface-treatment is introduced to obtain low resistance Pt contacts to p-type GaN. The first step is performed after the mesa etching process using buffered oxide etch (BOE) and ammonium sulfide [(NH4)2Sx]. This is followed by the second step using BOE. The Pt contact, which was treated sequentially using ultrasonically boiled BOE (10 min) and boiled (NH4)2Sx (10 min), produces a specific contact resistance of 3.0 (±3.8)×10-5 Ωcm2. However, the contact, that was simply BOE-treated, yields 3.1 (±1.1)×10-2 Ωcm2. This indicates that the two-step surface treatment is promising technique for obtaining high quality ohmic contacts to p-GaN. Investigation of the electronic transport mechanisms using current-voltage-temperature (I-V-T) data indicates that thermionic field emission is dominant in the surface-treated Pt contacts.

AB - Two-step surface-treatment is introduced to obtain low resistance Pt contacts to p-type GaN. The first step is performed after the mesa etching process using buffered oxide etch (BOE) and ammonium sulfide [(NH4)2Sx]. This is followed by the second step using BOE. The Pt contact, which was treated sequentially using ultrasonically boiled BOE (10 min) and boiled (NH4)2Sx (10 min), produces a specific contact resistance of 3.0 (±3.8)×10-5 Ωcm2. However, the contact, that was simply BOE-treated, yields 3.1 (±1.1)×10-2 Ωcm2. This indicates that the two-step surface treatment is promising technique for obtaining high quality ohmic contacts to p-GaN. Investigation of the electronic transport mechanisms using current-voltage-temperature (I-V-T) data indicates that thermionic field emission is dominant in the surface-treated Pt contacts.

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UR - http://www.scopus.com/inward/citedby.url?scp=0033708155&partnerID=8YFLogxK

M3 - Conference article

AN - SCOPUS:0033708155

VL - 595

SP - W10.4.1 - W10.4.6

JO - Materials Research Society Symposium Proceedings

JF - Materials Research Society Symposium Proceedings

SN - 0272-9172

T2 - The 1999 MRS Fall Meeting - Symposium W 'GaN and Related Alloys'

Y2 - 28 November 1999 through 3 December 1999

ER -