Abstract
Two-step surface-treatment is introduced to obtain low resistance Pt contacts to p-type GaN. The first step is performed after the mesa etching process using buffered oxide etch (BOE) and ammonium sulfide [(NH 4) 2S x]. This is followed by the second step using BOE. The Pt contact, which was treated sequentially using ultrasonically boiled BOE (10 min) and boiled (NH 4) 2S x (10 min), produces a specific contact resistance of 3.0 (±3.8)×10 -5 Ωcm 2. However, the contact, that was simply BOE-treated, yields 3.1 (±1.1)×10 -2 Ωcm 2. This indicates that the two-step surface treatment is promising technique for obtaining high quality ohmic contacts to p-GaN. Investigation of the electronic transport mechanisms using current-voltage-temperature (I-V-T) data indicates that thermionic field emission is dominant in the surface-treated Pt contacts.
| Original language | English |
|---|---|
| Title of host publication | Materials Research Society Symposium - Proceedings |
| Publisher | Materials Research Society |
| Volume | 595 |
| Publication status | Published - 2000 |
| Externally published | Yes |
| Event | The 1999 MRS Fall Meeting - Symposium W 'GaN and Related Alloys' - Boston, MA, USA Duration: 1999 Nov 28 → 1999 Dec 3 |
Other
| Other | The 1999 MRS Fall Meeting - Symposium W 'GaN and Related Alloys' |
|---|---|
| City | Boston, MA, USA |
| Period | 99/11/28 → 99/12/3 |
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ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
Cite this
High quality non-alloyed Pt ohmic contacts to p-type GaN using two-step surface treatment. / Jang, Ja Soon; Park, Seong Ju; Seong, Tae Yeon.
Materials Research Society Symposium - Proceedings. Vol. 595 Materials Research Society, 2000.Research output: Chapter in Book/Report/Conference proceeding › Conference contribution
}
TY - GEN
T1 - High quality non-alloyed Pt ohmic contacts to p-type GaN using two-step surface treatment
AU - Jang, Ja Soon
AU - Park, Seong Ju
AU - Seong, Tae Yeon
PY - 2000
Y1 - 2000
N2 - Two-step surface-treatment is introduced to obtain low resistance Pt contacts to p-type GaN. The first step is performed after the mesa etching process using buffered oxide etch (BOE) and ammonium sulfide [(NH 4) 2S x]. This is followed by the second step using BOE. The Pt contact, which was treated sequentially using ultrasonically boiled BOE (10 min) and boiled (NH 4) 2S x (10 min), produces a specific contact resistance of 3.0 (±3.8)×10 -5 Ωcm 2. However, the contact, that was simply BOE-treated, yields 3.1 (±1.1)×10 -2 Ωcm 2. This indicates that the two-step surface treatment is promising technique for obtaining high quality ohmic contacts to p-GaN. Investigation of the electronic transport mechanisms using current-voltage-temperature (I-V-T) data indicates that thermionic field emission is dominant in the surface-treated Pt contacts.
AB - Two-step surface-treatment is introduced to obtain low resistance Pt contacts to p-type GaN. The first step is performed after the mesa etching process using buffered oxide etch (BOE) and ammonium sulfide [(NH 4) 2S x]. This is followed by the second step using BOE. The Pt contact, which was treated sequentially using ultrasonically boiled BOE (10 min) and boiled (NH 4) 2S x (10 min), produces a specific contact resistance of 3.0 (±3.8)×10 -5 Ωcm 2. However, the contact, that was simply BOE-treated, yields 3.1 (±1.1)×10 -2 Ωcm 2. This indicates that the two-step surface treatment is promising technique for obtaining high quality ohmic contacts to p-GaN. Investigation of the electronic transport mechanisms using current-voltage-temperature (I-V-T) data indicates that thermionic field emission is dominant in the surface-treated Pt contacts.
UR - http://www.scopus.com/inward/record.url?scp=0033708155&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=0033708155&partnerID=8YFLogxK
M3 - Conference contribution
AN - SCOPUS:0033708155
VL - 595
BT - Materials Research Society Symposium - Proceedings
PB - Materials Research Society
ER -