Abstract
Two-step surface-treatment is introduced to obtain low resistance Pt contacts to p-type GaN. The first step is performed after the mesa etching process using buffered oxide etch (BOE) and ammonium sulfide [(NH4)2Sx]. This is followed by the second step using BOE. The Pt contact, which was treated sequentially using ultrasonically boiled BOE (10 min) and boiled (NH4)2Sx (10 min), produces a specific contact resistance of 3.0 (±3.8)×10-5 Ωcm2. However, the contact, that was simply BOE-treated, yields 3.1 (±1.1)×10-2 Ωcm2. This indicates that the two-step surface treatment is promising technique for obtaining high quality ohmic contacts to p-GaN. Investigation of the electronic transport mechanisms using current-voltage-temperature (I-V-T) data indicates that thermionic field emission is dominant in the surface-treated Pt contacts.
Original language | English |
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Pages (from-to) | W10.4.1 - W10.4.6 |
Journal | Materials Research Society Symposium - Proceedings |
Volume | 595 |
Publication status | Published - 2000 |
Externally published | Yes |
Event | The 1999 MRS Fall Meeting - Symposium W 'GaN and Related Alloys' - Boston, MA, USA Duration: 1999 Nov 28 → 1999 Dec 3 |
ASJC Scopus subject areas
- Materials Science(all)
- Condensed Matter Physics
- Mechanics of Materials
- Mechanical Engineering