High quality non-alloyed Pt ohmic contacts to p-type GaN using two-step surface treatment

Ja Soon Jang; Seong Ju Park; Tae Yeon Seong

High quality non-alloyed Pt ohmic contacts to p-type GaN using two-step surface treatment

Ja Soon Jang, Seong Ju Park, Tae Yeon Seong

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

Two-step surface-treatment is introduced to obtain low resistance Pt contacts to p-type GaN. The first step is performed after the mesa etching process using buffered oxide etch (BOE) and ammonium sulfide [(NH ₄) ₂S _x]. This is followed by the second step using BOE. The Pt contact, which was treated sequentially using ultrasonically boiled BOE (10 min) and boiled (NH ₄) ₂S _x (10 min), produces a specific contact resistance of 3.0 (±3.8)×10 ^-5 Ωcm ². However, the contact, that was simply BOE-treated, yields 3.1 (±1.1)×10 ^-2 Ωcm ². This indicates that the two-step surface treatment is promising technique for obtaining high quality ohmic contacts to p-GaN. Investigation of the electronic transport mechanisms using current-voltage-temperature (I-V-T) data indicates that thermionic field emission is dominant in the surface-treated Pt contacts.

Original language	English
Title of host publication	Materials Research Society Symposium - Proceedings
Publisher	Materials Research Society
Volume	595
Publication status	Published - 2000
Externally published	Yes
Event	The 1999 MRS Fall Meeting - Symposium W 'GaN and Related Alloys' - Boston, MA, USA Duration: 1999 Nov 28 → 1999 Dec 3

Other

Other	The 1999 MRS Fall Meeting - Symposium W 'GaN and Related Alloys'
City	Boston, MA, USA
Period	99/11/28 → 99/12/3

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ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials

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Jang, J. S., Park, S. J., & Seong, T. Y. (2000). High quality non-alloyed Pt ohmic contacts to p-type GaN using two-step surface treatment. In Materials Research Society Symposium - Proceedings (Vol. 595). Materials Research Society.

@inproceedings{2f3965f2fd6248e59224643b25fb1fe1,

title = "High quality non-alloyed Pt ohmic contacts to p-type GaN using two-step surface treatment",

abstract = "Two-step surface-treatment is introduced to obtain low resistance Pt contacts to p-type GaN. The first step is performed after the mesa etching process using buffered oxide etch (BOE) and ammonium sulfide [(NH 4) 2S x]. This is followed by the second step using BOE. The Pt contact, which was treated sequentially using ultrasonically boiled BOE (10 min) and boiled (NH 4) 2S x (10 min), produces a specific contact resistance of 3.0 (±3.8)×10 -5 Ωcm 2. However, the contact, that was simply BOE-treated, yields 3.1 (±1.1)×10 -2 Ωcm 2. This indicates that the two-step surface treatment is promising technique for obtaining high quality ohmic contacts to p-GaN. Investigation of the electronic transport mechanisms using current-voltage-temperature (I-V-T) data indicates that thermionic field emission is dominant in the surface-treated Pt contacts. ",

author = "Jang, {Ja Soon} and Park, {Seong Ju} and Seong, {Tae Yeon}",

year = "2000",

language = "English",

volume = "595",

booktitle = "Materials Research Society Symposium - Proceedings",

publisher = "Materials Research Society",

note = "The 1999 MRS Fall Meeting - Symposium W 'GaN and Related Alloys' ; Conference date: 28-11-1999 Through 03-12-1999",

}

TY - GEN

T1 - High quality non-alloyed Pt ohmic contacts to p-type GaN using two-step surface treatment

AU - Jang, Ja Soon

AU - Park, Seong Ju

AU - Seong, Tae Yeon

PY - 2000

Y1 - 2000

N2 - Two-step surface-treatment is introduced to obtain low resistance Pt contacts to p-type GaN. The first step is performed after the mesa etching process using buffered oxide etch (BOE) and ammonium sulfide [(NH 4) 2S x]. This is followed by the second step using BOE. The Pt contact, which was treated sequentially using ultrasonically boiled BOE (10 min) and boiled (NH 4) 2S x (10 min), produces a specific contact resistance of 3.0 (±3.8)×10 -5 Ωcm 2. However, the contact, that was simply BOE-treated, yields 3.1 (±1.1)×10 -2 Ωcm 2. This indicates that the two-step surface treatment is promising technique for obtaining high quality ohmic contacts to p-GaN. Investigation of the electronic transport mechanisms using current-voltage-temperature (I-V-T) data indicates that thermionic field emission is dominant in the surface-treated Pt contacts.

AB - Two-step surface-treatment is introduced to obtain low resistance Pt contacts to p-type GaN. The first step is performed after the mesa etching process using buffered oxide etch (BOE) and ammonium sulfide [(NH 4) 2S x]. This is followed by the second step using BOE. The Pt contact, which was treated sequentially using ultrasonically boiled BOE (10 min) and boiled (NH 4) 2S x (10 min), produces a specific contact resistance of 3.0 (±3.8)×10 -5 Ωcm 2. However, the contact, that was simply BOE-treated, yields 3.1 (±1.1)×10 -2 Ωcm 2. This indicates that the two-step surface treatment is promising technique for obtaining high quality ohmic contacts to p-GaN. Investigation of the electronic transport mechanisms using current-voltage-temperature (I-V-T) data indicates that thermionic field emission is dominant in the surface-treated Pt contacts.

UR - http://www.scopus.com/inward/record.url?scp=0033708155&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0033708155&partnerID=8YFLogxK

M3 - Conference contribution

AN - SCOPUS:0033708155

VL - 595

BT - Materials Research Society Symposium - Proceedings

PB - Materials Research Society

T2 - The 1999 MRS Fall Meeting - Symposium W 'GaN and Related Alloys'

Y2 - 28 November 1999 through 3 December 1999

ER -

High quality non-alloyed Pt ohmic contacts to p-type GaN using two-step surface treatment

Abstract

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