TY - JOUR
T1 - High quality non-alloyed Pt ohmic contacts to p-type GaN using two-step surface treatment
AU - Jang, Ja Soon
AU - Park, Seong Ju
AU - Seong, Tae Yeon
N1 - Funding Information:
This work was supported by Korea Ministry of Information and Communications (C1-98-0929) and Critical Technology 21 (Development of Power Semiconductors) (98-N5-01-01-A-08).
Copyright:
Copyright 2004 Elsevier Science B.V., Amsterdam. All rights reserved.
PY - 2000
Y1 - 2000
N2 - Two-step surface-treatment is introduced to obtain low resistance Pt contacts to p-type GaN. The first step is performed after the mesa etching process using buffered oxide etch (BOE) and ammonium sulfide [(NH4)2Sx]. This is followed by the second step using BOE. The Pt contact, which was treated sequentially using ultrasonically boiled BOE (10 min) and boiled (NH4)2Sx (10 min), produces a specific contact resistance of 3.0 (±3.8)×10-5 Ωcm2. However, the contact, that was simply BOE-treated, yields 3.1 (±1.1)×10-2 Ωcm2. This indicates that the two-step surface treatment is promising technique for obtaining high quality ohmic contacts to p-GaN. Investigation of the electronic transport mechanisms using current-voltage-temperature (I-V-T) data indicates that thermionic field emission is dominant in the surface-treated Pt contacts.
AB - Two-step surface-treatment is introduced to obtain low resistance Pt contacts to p-type GaN. The first step is performed after the mesa etching process using buffered oxide etch (BOE) and ammonium sulfide [(NH4)2Sx]. This is followed by the second step using BOE. The Pt contact, which was treated sequentially using ultrasonically boiled BOE (10 min) and boiled (NH4)2Sx (10 min), produces a specific contact resistance of 3.0 (±3.8)×10-5 Ωcm2. However, the contact, that was simply BOE-treated, yields 3.1 (±1.1)×10-2 Ωcm2. This indicates that the two-step surface treatment is promising technique for obtaining high quality ohmic contacts to p-GaN. Investigation of the electronic transport mechanisms using current-voltage-temperature (I-V-T) data indicates that thermionic field emission is dominant in the surface-treated Pt contacts.
UR - http://www.scopus.com/inward/record.url?scp=0033708155&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=0033708155&partnerID=8YFLogxK
M3 - Conference article
AN - SCOPUS:0033708155
VL - 595
SP - W10.4.1 - W10.4.6
JO - Materials Research Society Symposium Proceedings
JF - Materials Research Society Symposium Proceedings
SN - 0272-9172
T2 - The 1999 MRS Fall Meeting - Symposium W 'GaN and Related Alloys'
Y2 - 28 November 1999 through 3 December 1999
ER -