High quality non-alloyed Pt ohmic contacts to p-type GaN using two-step surface treatment

Ja Soon Jang, Seong J. Park, Tae Yeon Seong

Research output: Contribution to journalArticle

Abstract

Two-step surface-treatment is introduced to obtain low resistance Pt contacts to p-type GaN. The first step is performed after the mesa etching process using buffered oxide etch (BOE) and ammonium sulfide [(NH 4)2Sx]. This is followed by the second step using BOE. The Pt contact, which was treated sequentially using ultrasonically boiled BOE (10 min) and boiled (NH4)2Sx (10 min), produces a specific contact resistance of 3.0 (±3.8)×10 -5 Ωcm2. However, the contact, that was simply BOE-treated, yields 3.1 (±1.1)×10-2 Ωcm 2. This indicates that the two-step surface treatment is promising technique for obtaining high quality ohmic contacts to p-GaN. Investigation of the electronic transport mechanisms using current-voltage-temperature (I-V-T) data indicates that thermionic field emission is dominant in the surface-treated Pt contacts.

Original languageEnglish
JournalMRS Internet Journal of Nitride Semiconductor Research
Volume5
Issue numberSUPPL. 1
Publication statusPublished - 2000 Dec 1
Externally publishedYes

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Ohmic contacts
Oxides
Surface treatment
Contact resistance
Thermionic emission
Field emission
Etching
Electric potential
Temperature

ASJC Scopus subject areas

  • Materials Science(all)

Cite this

High quality non-alloyed Pt ohmic contacts to p-type GaN using two-step surface treatment. / Jang, Ja Soon; Park, Seong J.; Seong, Tae Yeon.

In: MRS Internet Journal of Nitride Semiconductor Research, Vol. 5, No. SUPPL. 1, 01.12.2000.

Research output: Contribution to journalArticle

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