High-quality nonalloyed rhodium-based ohmic contacts to p-type GaN

June O. Song, Dong Seok Leem, Joon Seop Kwak, O. H. Nam, Y. Park, Tae Yeon Seong

Research output: Contribution to journalArticle

23 Citations (Scopus)

Abstract

High-quality nonalloyed rhodium (Rh)-based ohmic contacts to p-type GaN were studied. The mechanisms for the ohmic contact formation without a post-annealing process were investigated using x-ray photoelectron microscopy (XPS). The results implied that Rh interacted with gallium and formed interfacial product such as gallides.

Original languageEnglish
Pages (from-to)2372-2374
Number of pages3
JournalApplied Physics Letters
Volume83
Issue number12
DOIs
Publication statusPublished - 2003 Sep 22
Externally publishedYes

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rhodium
electric contacts
gallium
photoelectrons
microscopy
annealing
products
x rays

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

High-quality nonalloyed rhodium-based ohmic contacts to p-type GaN. / Song, June O.; Leem, Dong Seok; Kwak, Joon Seop; Nam, O. H.; Park, Y.; Seong, Tae Yeon.

In: Applied Physics Letters, Vol. 83, No. 12, 22.09.2003, p. 2372-2374.

Research output: Contribution to journalArticle

Song, JO, Leem, DS, Kwak, JS, Nam, OH, Park, Y & Seong, TY 2003, 'High-quality nonalloyed rhodium-based ohmic contacts to p-type GaN', Applied Physics Letters, vol. 83, no. 12, pp. 2372-2374. https://doi.org/10.1063/1.1613991
Song, June O. ; Leem, Dong Seok ; Kwak, Joon Seop ; Nam, O. H. ; Park, Y. ; Seong, Tae Yeon. / High-quality nonalloyed rhodium-based ohmic contacts to p-type GaN. In: Applied Physics Letters. 2003 ; Vol. 83, No. 12. pp. 2372-2374.
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