High-quality nonalloyed rhodium-based ohmic contacts to p-type GaN

June O. Song, Dong Seok Leem, Joon Seop Kwak, O. H. Nam, Y. Park, Tae Yeon Seong

Research output: Contribution to journalArticle

23 Citations (Scopus)

Abstract

High-quality nonalloyed rhodium (Rh)-based ohmic contacts to p-type GaN were studied. The mechanisms for the ohmic contact formation without a post-annealing process were investigated using x-ray photoelectron microscopy (XPS). The results implied that Rh interacted with gallium and formed interfacial product such as gallides.

Original languageEnglish
Pages (from-to)2372-2374
Number of pages3
JournalApplied Physics Letters
Volume83
Issue number12
DOIs
Publication statusPublished - 2003 Sep 22

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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