High-quality nonalloyed rhodium (Rh)-based ohmic contacts to p-type GaN were studied. The mechanisms for the ohmic contact formation without a post-annealing process were investigated using x-ray photoelectron microscopy (XPS). The results implied that Rh interacted with gallium and formed interfacial product such as gallides.
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)