Abstract
Silicon nitride (SiN) films with very high dielectric strength of more than 8 MV/cm were successfully deposited on Si wafers using helium plasma-enhanced chemical vapor deposition (He-PECVD) at very low deposition temperature. The quality of the SiN films was much better than that of the SiN films deposited by the conventional PECVD. Silicon oxynitride (SiON) films with index of refraction varying from 1.46 to 2.0 were also deposited on Corning-7059 glass substrate by controlling the gas flow rate using computer process controller.
| Original language | English |
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| Pages | 406-410 |
| Number of pages | 5 |
| Publication status | Published - 1996 |
| Externally published | Yes |
| Event | Proceedings of the 1996 9th International Vacuum Microelectronics Conference, IVMC - St.Petersburg, Russia Duration: 1996 Jul 7 → 1996 Jul 12 |
Other
| Other | Proceedings of the 1996 9th International Vacuum Microelectronics Conference, IVMC |
|---|---|
| City | St.Petersburg, Russia |
| Period | 96/7/7 → 96/7/12 |
ASJC Scopus subject areas
- Surfaces and Interfaces