High quality silicon-nitride thin films grown by helium plasma-enhanced chemical vapor deposition

S. Lim; S. J. Kim; J. H. Jung; B. K. Ju; M. H. Oh; J. F. Wager

High quality silicon-nitride thin films grown by helium plasma-enhanced chemical vapor deposition

S. Lim, S. J. Kim, J. H. Jung, B. K. Ju, M. H. Oh, J. F. Wager

Research output: Contribution to conference › Paper › peer-review

Abstract

Silicon nitride (SiN) films with very high dielectric strength of more than 8 MV/cm were successfully deposited on Si wafers using helium plasma-enhanced chemical vapor deposition (He-PECVD) at very low deposition temperature. The quality of the SiN films was much better than that of the SiN films deposited by the conventional PECVD. Silicon oxynitride (SiON) films with index of refraction varying from 1.46 to 2.0 were also deposited on Corning-7059 glass substrate by controlling the gas flow rate using computer process controller.

Original language	English
Pages	406-410
Number of pages	5
Publication status	Published - 1996
Externally published	Yes
Event	Proceedings of the 1996 9th International Vacuum Microelectronics Conference, IVMC - St.Petersburg, Russia Duration: 1996 Jul 7 → 1996 Jul 12

Other

Other	Proceedings of the 1996 9th International Vacuum Microelectronics Conference, IVMC
City	St.Petersburg, Russia
Period	96/7/7 → 96/7/12

ASJC Scopus subject areas

Surfaces and Interfaces

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High quality silicon-nitride thin films grown by helium plasma-enhanced chemical vapor deposition. / Lim, S.; Kim, S. J.; Jung, J. H.; Ju, B. K.; Oh, M. H.; Wager, J. F.

1996. 406-410 Paper presented at Proceedings of the 1996 9th International Vacuum Microelectronics Conference, IVMC, St.Petersburg, Russia, .

Research output: Contribution to conference › Paper › peer-review

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abstract = "Silicon nitride (SiN) films with very high dielectric strength of more than 8 MV/cm were successfully deposited on Si wafers using helium plasma-enhanced chemical vapor deposition (He-PECVD) at very low deposition temperature. The quality of the SiN films was much better than that of the SiN films deposited by the conventional PECVD. Silicon oxynitride (SiON) films with index of refraction varying from 1.46 to 2.0 were also deposited on Corning-7059 glass substrate by controlling the gas flow rate using computer process controller.",

author = "S. Lim and Kim, {S. J.} and Jung, {J. H.} and Ju, {B. K.} and Oh, {M. H.} and Wager, {J. F.}",

year = "1996",

language = "English",

pages = "406--410",

note = "Proceedings of the 1996 9th International Vacuum Microelectronics Conference, IVMC ; Conference date: 07-07-1996 Through 12-07-1996",

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T1 - High quality silicon-nitride thin films grown by helium plasma-enhanced chemical vapor deposition

AU - Lim, S.

AU - Kim, S. J.

AU - Jung, J. H.

AU - Ju, B. K.

AU - Oh, M. H.

AU - Wager, J. F.

PY - 1996

Y1 - 1996

N2 - Silicon nitride (SiN) films with very high dielectric strength of more than 8 MV/cm were successfully deposited on Si wafers using helium plasma-enhanced chemical vapor deposition (He-PECVD) at very low deposition temperature. The quality of the SiN films was much better than that of the SiN films deposited by the conventional PECVD. Silicon oxynitride (SiON) films with index of refraction varying from 1.46 to 2.0 were also deposited on Corning-7059 glass substrate by controlling the gas flow rate using computer process controller.

AB - Silicon nitride (SiN) films with very high dielectric strength of more than 8 MV/cm were successfully deposited on Si wafers using helium plasma-enhanced chemical vapor deposition (He-PECVD) at very low deposition temperature. The quality of the SiN films was much better than that of the SiN films deposited by the conventional PECVD. Silicon oxynitride (SiON) films with index of refraction varying from 1.46 to 2.0 were also deposited on Corning-7059 glass substrate by controlling the gas flow rate using computer process controller.

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T2 - Proceedings of the 1996 9th International Vacuum Microelectronics Conference, IVMC

Y2 - 7 July 1996 through 12 July 1996

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