High quality silicon-nitride thin films grown by helium plasma-enhanced chemical vapor deposition

S. Lim, S. J. Kim, J. H. Jung, Byeong Kwon Ju, M. H. Oh, J. F. Wager

Research output: Chapter in Book/Report/Conference proceedingConference contribution

6 Citations (Scopus)

Abstract

Silicon nitride (SiN) films with very high dielectric strength of more than 8 MV/cm were successfully deposited on Si wafers using helium plasma-enhanced chemical vapor deposition (He-PECVD) at very low deposition temperature. The quality of the SiN films was much better than that of the SiN films deposited by the conventional PECVD. Silicon oxynitride (SiON) films with index of refraction varying from 1.46 to 2.0 were also deposited on Corning-7059 glass substrate by controlling the gas flow rate using computer process controller.

Original languageEnglish
Title of host publicationProceedings of the IEEE International Vacuum Microelectronics Conference, IVMC
Place of PublicationPiscataway, NJ, United States
PublisherIEEE
Pages406-410
Number of pages5
Publication statusPublished - 1996 Dec 1
Externally publishedYes
EventProceedings of the 1996 9th International Vacuum Microelectronics Conference, IVMC - St.Petersburg, Russia
Duration: 1996 Jul 71996 Jul 12

Other

OtherProceedings of the 1996 9th International Vacuum Microelectronics Conference, IVMC
CitySt.Petersburg, Russia
Period96/7/796/7/12

Fingerprint

helium plasma
silicon nitrides
vapor deposition
thin films
oxynitrides
gas flow
refraction
controllers
flow velocity
wafers
glass
silicon
temperature

ASJC Scopus subject areas

  • Surfaces and Interfaces

Cite this

Lim, S., Kim, S. J., Jung, J. H., Ju, B. K., Oh, M. H., & Wager, J. F. (1996). High quality silicon-nitride thin films grown by helium plasma-enhanced chemical vapor deposition. In Proceedings of the IEEE International Vacuum Microelectronics Conference, IVMC (pp. 406-410). Piscataway, NJ, United States: IEEE.

High quality silicon-nitride thin films grown by helium plasma-enhanced chemical vapor deposition. / Lim, S.; Kim, S. J.; Jung, J. H.; Ju, Byeong Kwon; Oh, M. H.; Wager, J. F.

Proceedings of the IEEE International Vacuum Microelectronics Conference, IVMC. Piscataway, NJ, United States : IEEE, 1996. p. 406-410.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Lim, S, Kim, SJ, Jung, JH, Ju, BK, Oh, MH & Wager, JF 1996, High quality silicon-nitride thin films grown by helium plasma-enhanced chemical vapor deposition. in Proceedings of the IEEE International Vacuum Microelectronics Conference, IVMC. IEEE, Piscataway, NJ, United States, pp. 406-410, Proceedings of the 1996 9th International Vacuum Microelectronics Conference, IVMC, St.Petersburg, Russia, 96/7/7.
Lim S, Kim SJ, Jung JH, Ju BK, Oh MH, Wager JF. High quality silicon-nitride thin films grown by helium plasma-enhanced chemical vapor deposition. In Proceedings of the IEEE International Vacuum Microelectronics Conference, IVMC. Piscataway, NJ, United States: IEEE. 1996. p. 406-410
Lim, S. ; Kim, S. J. ; Jung, J. H. ; Ju, Byeong Kwon ; Oh, M. H. ; Wager, J. F. / High quality silicon-nitride thin films grown by helium plasma-enhanced chemical vapor deposition. Proceedings of the IEEE International Vacuum Microelectronics Conference, IVMC. Piscataway, NJ, United States : IEEE, 1996. pp. 406-410
@inproceedings{099a2e6e4c6c4e1a9c0d52dc44e24040,
title = "High quality silicon-nitride thin films grown by helium plasma-enhanced chemical vapor deposition",
abstract = "Silicon nitride (SiN) films with very high dielectric strength of more than 8 MV/cm were successfully deposited on Si wafers using helium plasma-enhanced chemical vapor deposition (He-PECVD) at very low deposition temperature. The quality of the SiN films was much better than that of the SiN films deposited by the conventional PECVD. Silicon oxynitride (SiON) films with index of refraction varying from 1.46 to 2.0 were also deposited on Corning-7059 glass substrate by controlling the gas flow rate using computer process controller.",
author = "S. Lim and Kim, {S. J.} and Jung, {J. H.} and Ju, {Byeong Kwon} and Oh, {M. H.} and Wager, {J. F.}",
year = "1996",
month = "12",
day = "1",
language = "English",
pages = "406--410",
booktitle = "Proceedings of the IEEE International Vacuum Microelectronics Conference, IVMC",
publisher = "IEEE",

}

TY - GEN

T1 - High quality silicon-nitride thin films grown by helium plasma-enhanced chemical vapor deposition

AU - Lim, S.

AU - Kim, S. J.

AU - Jung, J. H.

AU - Ju, Byeong Kwon

AU - Oh, M. H.

AU - Wager, J. F.

PY - 1996/12/1

Y1 - 1996/12/1

N2 - Silicon nitride (SiN) films with very high dielectric strength of more than 8 MV/cm were successfully deposited on Si wafers using helium plasma-enhanced chemical vapor deposition (He-PECVD) at very low deposition temperature. The quality of the SiN films was much better than that of the SiN films deposited by the conventional PECVD. Silicon oxynitride (SiON) films with index of refraction varying from 1.46 to 2.0 were also deposited on Corning-7059 glass substrate by controlling the gas flow rate using computer process controller.

AB - Silicon nitride (SiN) films with very high dielectric strength of more than 8 MV/cm were successfully deposited on Si wafers using helium plasma-enhanced chemical vapor deposition (He-PECVD) at very low deposition temperature. The quality of the SiN films was much better than that of the SiN films deposited by the conventional PECVD. Silicon oxynitride (SiON) films with index of refraction varying from 1.46 to 2.0 were also deposited on Corning-7059 glass substrate by controlling the gas flow rate using computer process controller.

UR - http://www.scopus.com/inward/record.url?scp=0030358958&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0030358958&partnerID=8YFLogxK

M3 - Conference contribution

AN - SCOPUS:0030358958

SP - 406

EP - 410

BT - Proceedings of the IEEE International Vacuum Microelectronics Conference, IVMC

PB - IEEE

CY - Piscataway, NJ, United States

ER -