Abstract
Silicon nitride (SiN) films with very high dielectric strength of more than 8 MV/cm were successfully deposited on Si wafers using helium plasma-enhanced chemical vapor deposition (He-PECVD) at very low deposition temperature. The quality of the SiN films was much better than that of the SiN films deposited by the conventional PECVD. Silicon oxynitride (SiON) films with index of refraction varying from 1.46 to 2.0 were also deposited on Corning-7059 glass substrate by controlling the gas flow rate using computer process controller.
| Original language | English |
|---|---|
| Title of host publication | Proceedings of the IEEE International Vacuum Microelectronics Conference, IVMC |
| Place of Publication | Piscataway, NJ, United States |
| Publisher | IEEE |
| Pages | 406-410 |
| Number of pages | 5 |
| Publication status | Published - 1996 Dec 1 |
| Externally published | Yes |
| Event | Proceedings of the 1996 9th International Vacuum Microelectronics Conference, IVMC - St.Petersburg, Russia Duration: 1996 Jul 7 → 1996 Jul 12 |
Other
| Other | Proceedings of the 1996 9th International Vacuum Microelectronics Conference, IVMC |
|---|---|
| City | St.Petersburg, Russia |
| Period | 96/7/7 → 96/7/12 |
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ASJC Scopus subject areas
- Surfaces and Interfaces
Cite this
High quality silicon-nitride thin films grown by helium plasma-enhanced chemical vapor deposition. / Lim, S.; Kim, S. J.; Jung, J. H.; Ju, Byeong Kwon; Oh, M. H.; Wager, J. F.
Proceedings of the IEEE International Vacuum Microelectronics Conference, IVMC. Piscataway, NJ, United States : IEEE, 1996. p. 406-410.Research output: Chapter in Book/Report/Conference proceeding › Conference contribution
}
TY - GEN
T1 - High quality silicon-nitride thin films grown by helium plasma-enhanced chemical vapor deposition
AU - Lim, S.
AU - Kim, S. J.
AU - Jung, J. H.
AU - Ju, Byeong Kwon
AU - Oh, M. H.
AU - Wager, J. F.
PY - 1996/12/1
Y1 - 1996/12/1
N2 - Silicon nitride (SiN) films with very high dielectric strength of more than 8 MV/cm were successfully deposited on Si wafers using helium plasma-enhanced chemical vapor deposition (He-PECVD) at very low deposition temperature. The quality of the SiN films was much better than that of the SiN films deposited by the conventional PECVD. Silicon oxynitride (SiON) films with index of refraction varying from 1.46 to 2.0 were also deposited on Corning-7059 glass substrate by controlling the gas flow rate using computer process controller.
AB - Silicon nitride (SiN) films with very high dielectric strength of more than 8 MV/cm were successfully deposited on Si wafers using helium plasma-enhanced chemical vapor deposition (He-PECVD) at very low deposition temperature. The quality of the SiN films was much better than that of the SiN films deposited by the conventional PECVD. Silicon oxynitride (SiON) films with index of refraction varying from 1.46 to 2.0 were also deposited on Corning-7059 glass substrate by controlling the gas flow rate using computer process controller.
UR - http://www.scopus.com/inward/record.url?scp=0030358958&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=0030358958&partnerID=8YFLogxK
M3 - Conference contribution
AN - SCOPUS:0030358958
SP - 406
EP - 410
BT - Proceedings of the IEEE International Vacuum Microelectronics Conference, IVMC
PB - IEEE
CY - Piscataway, NJ, United States
ER -