High quality tin zinc oxide/Ag ohmic contacts for UV flip-chip light-emitting diodes

Hyun Gi Hong, K. Y. Ban, June O. Song, J. Cho, Y. Park, J. S. Kwak, Ian T. Ferguson, Tae Yeon Seong

Research output: Contribution to journalConference article

1 Citation (Scopus)

Abstract

High quality SnZnO (TZO)/Ag ohmic contacts to p-GaN (Na = 4×1017/cm3) for UV flip-chip light-emitting diodes (LEDs) were investigated. The TZO (2.5 nm)/Ag (250 nm) contacts produce contact resistivity of 1.58 × 10-4 Ωcm2 and reflectance of 76% at 405 nm when annealed at a temperature of 530 °C for Imin in air. Near-UV LEDs made with the annealed TZO (2.5 nm)/Ag (250 nm) contacts give reverse leakage current of ∼10-8 A at reverse voltage of -10 V. Based on X-ray photoelectron spectroscopy, possible ohmic formation mechanisms are discussed.

Original languageEnglish
Pages (from-to)2133-2136
Number of pages4
JournalPhysica Status Solidi (C) Current Topics in Solid State Physics
Volume3
DOIs
Publication statusPublished - 2006
Event6th International Conference on Nitride Semiconductors, ICNS-6 - Bremen, Germany
Duration: 2005 Aug 282005 Sep 2

ASJC Scopus subject areas

  • Condensed Matter Physics

Fingerprint Dive into the research topics of 'High quality tin zinc oxide/Ag ohmic contacts for UV flip-chip light-emitting diodes'. Together they form a unique fingerprint.

  • Cite this