High-rate dry etching of ZnO in BCl3/CH4/H2 plasmas

Jeong Woon Bae, Chang Hyun Jeong, Han Ki Kim, Kyoung Kook Kim, Nam Gil Cho, Tae Yeon Seong, Seong Ju Park, Ilesanmi Adesida, Geun Young Yeom

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37 Citations (Scopus)


High-rate dry etching characteristics of aluminum-doped zinc oxide (AZO) have been investigated in inductively coupled plasma (ICP) using BCl3/CH4/H2 plasma chemistry. Etch rates were measured as a function of BCl3 flow rate in BCl3/CH4H2 mixture and de-bias voltage. Measurement of etch rate, and etched sidewall profile were performed using a stylus profilometer and scanning electron microscopy, respectively. The highest AZO etch rate about 310 nm/min, could be obtained near 80% BCl3 and at de-bias voltage of -350 V.

Original languageEnglish
Pages (from-to)L535-L537
JournalJapanese Journal of Applied Physics, Part 2: Letters
Issue number5 B
Publication statusPublished - 2003 May 15
Externally publishedYes


  • AZO
  • BCl
  • Bias voltage
  • Etch profile
  • Inductively coupled plasma

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)


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