High-rate dry etching of ZnO in BCl3/CH4/H2 plasmas

Jeong Woon Bae, Chang Hyun Jeong, Han Ki Kim, Kyoung Kook Kim, Nam Gil Cho, Tae Yeon Seong, Seong Ju Park, Ilesanmi Adesida, Geun Young Yeom

Research output: Contribution to journalArticle

36 Citations (Scopus)

Abstract

High-rate dry etching characteristics of aluminum-doped zinc oxide (AZO) have been investigated in inductively coupled plasma (ICP) using BCl3/CH4/H2 plasma chemistry. Etch rates were measured as a function of BCl3 flow rate in BCl3/CH4H2 mixture and de-bias voltage. Measurement of etch rate, and etched sidewall profile were performed using a stylus profilometer and scanning electron microscopy, respectively. The highest AZO etch rate about 310 nm/min, could be obtained near 80% BCl3 and at de-bias voltage of -350 V.

Original languageEnglish
Pages (from-to)L535-L537
JournalJapanese Journal of Applied Physics, Part 2: Letters
Volume42
Issue number5 B
DOIs
Publication statusPublished - 2003 May 15
Externally publishedYes

Keywords

  • AZO
  • BCl
  • Bias voltage
  • Etch profile
  • Inductively coupled plasma

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy (miscellaneous)
  • Physics and Astronomy(all)

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  • Cite this

    Bae, J. W., Jeong, C. H., Kim, H. K., Kim, K. K., Cho, N. G., Seong, T. Y., Park, S. J., Adesida, I., & Yeom, G. Y. (2003). High-rate dry etching of ZnO in BCl3/CH4/H2 plasmas. Japanese Journal of Applied Physics, Part 2: Letters, 42(5 B), L535-L537. https://doi.org/10.1143/jjap.42.l535