High-reflectance and thermally stable AgCu alloy p-type reflectors for GaN-based light-emitting diodes

Hyunsoo Kim, Kwang Hyeon Baik, Jaehee Cho, Jeong Wook Lee, Sukho Yoon, Hyungkun Kim, Sung N. Lee, Cheolsoo Sone, Yongjo Park, Tae Yeon Seong

Research output: Contribution to journalArticle

62 Citations (Scopus)


We report on the formation of high-quality AgCu alloy p-type reflectors for GaN-based light-emitting diodes (LEDs). Compared with Ag contacts, the AgCu alloy reflectors produce lower specific contact resistance (7.5 × 10-5 Ω · cm2), higher light reflectance (89.5% at 400 nm), and better thermal stability (absence of interfacial voids), when annealed at 400 °C in N2 :O2) ambient. LEDs fabricated with the AgCu reflectors show light output power better than that of LEDs with the Ag reflectors. The ohmic mechanism for the AgCu alloy reflectors is explained in terms of the formation of Ag-Ga solid solution and the presence of Cu-oxide nano-particles at the contact/GaN interface.

Original languageEnglish
Pages (from-to)336-338
Number of pages3
JournalIEEE Photonics Technology Letters
Issue number5
Publication statusPublished - 2007 Mar 1



  • AgCu
  • Alloy
  • GaN
  • Light-emitting diode (LED)
  • Ohmic contacts
  • Reflector

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Physics and Astronomy (miscellaneous)
  • Atomic and Molecular Physics, and Optics

Cite this