High-speed and low-voltage performance in a charge-trapping flash memory using a NiO tunnel junction

Yujeong Seo, Ho Myoung An, Hee Dong Kim, In Rok Hwang, Sa Hwan Hong, Bae Ho Park, Tae Geun Kim

Research output: Contribution to journalArticle

7 Citations (Scopus)

Abstract

A novel charge-trapping nonvolatile memory using gate injection switching is demonstrated in this paper. This device is composed of metal/NiO/nitride/ oxide/silicon in order to make use of the electrical transport phenomenon found in NiO tunnel junctions. Compared with the reference structure of a conventional metal/oxide/nitride/oxide/silicon memory, the proposed device showed a larger memory window, very fast switching speeds of 100 ns/1 μs and a low operation voltage of ± 5 V for the program/erase states. In addition, we observed that a large number of interface states in the bottom oxide were reduced using deep-level transient spectroscopy.

Original languageEnglish
Article number155105
JournalJournal of Physics D: Applied Physics
Volume44
Issue number15
DOIs
Publication statusPublished - 2011 Apr 20

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Acoustics and Ultrasonics
  • Surfaces, Coatings and Films

Fingerprint Dive into the research topics of 'High-speed and low-voltage performance in a charge-trapping flash memory using a NiO tunnel junction'. Together they form a unique fingerprint.

  • Cite this