High-speed and low-voltage performance in a charge-trapping flash memory using a NiO tunnel junction

Yujeong Seo, Ho Myoung An, Hee Dong Kim, In Rok Hwang, Sa Hwan Hong, Bae Ho Park, Tae Geun Kim

Research output: Contribution to journalArticle

6 Citations (Scopus)

Abstract

A novel charge-trapping nonvolatile memory using gate injection switching is demonstrated in this paper. This device is composed of metal/NiO/nitride/ oxide/silicon in order to make use of the electrical transport phenomenon found in NiO tunnel junctions. Compared with the reference structure of a conventional metal/oxide/nitride/oxide/silicon memory, the proposed device showed a larger memory window, very fast switching speeds of 100 ns/1 μs and a low operation voltage of ± 5 V for the program/erase states. In addition, we observed that a large number of interface states in the bottom oxide were reduced using deep-level transient spectroscopy.

Original languageEnglish
Article number155105
JournalJournal of Physics D: Applied Physics
Volume44
Issue number15
DOIs
Publication statusPublished - 2011 Apr 20

Fingerprint

Charge trapping
Flash memory
Tunnel junctions
tunnel junctions
low voltage
flash
trapping
Silicon oxides
high speed
Data storage equipment
Nitrides
Oxides
Electric potential
Metals
metal-nitride-oxide-silicon
Deep level transient spectroscopy
Interface states
silicon oxides
nitrides
metal oxides

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Electronic, Optical and Magnetic Materials
  • Acoustics and Ultrasonics
  • Surfaces, Coatings and Films

Cite this

High-speed and low-voltage performance in a charge-trapping flash memory using a NiO tunnel junction. / Seo, Yujeong; An, Ho Myoung; Kim, Hee Dong; Hwang, In Rok; Hong, Sa Hwan; Park, Bae Ho; Kim, Tae Geun.

In: Journal of Physics D: Applied Physics, Vol. 44, No. 15, 155105, 20.04.2011.

Research output: Contribution to journalArticle

Seo, Yujeong ; An, Ho Myoung ; Kim, Hee Dong ; Hwang, In Rok ; Hong, Sa Hwan ; Park, Bae Ho ; Kim, Tae Geun. / High-speed and low-voltage performance in a charge-trapping flash memory using a NiO tunnel junction. In: Journal of Physics D: Applied Physics. 2011 ; Vol. 44, No. 15.
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