High-speed and low-voltage performance in a charge-trapping flash memory using a NiO tunnel junction

Yujeong Seo; Ho Myoung An; Hee Dong Kim; In Rok Hwang; Sa Hwan Hong; Bae Ho Park; Tae Geun Kim

doi:10.1088/0022-3727/44/15/155105

High-speed and low-voltage performance in a charge-trapping flash memory using a NiO tunnel junction

Yujeong Seo, Ho Myoung An, Hee Dong Kim, In Rok Hwang, Sa Hwan Hong, Bae Ho Park, Tae Geun Kim

School of Electrical Engineering

Research output: Contribution to journal › Article › peer-review

7 Citations (Scopus)

Abstract

A novel charge-trapping nonvolatile memory using gate injection switching is demonstrated in this paper. This device is composed of metal/NiO/nitride/ oxide/silicon in order to make use of the electrical transport phenomenon found in NiO tunnel junctions. Compared with the reference structure of a conventional metal/oxide/nitride/oxide/silicon memory, the proposed device showed a larger memory window, very fast switching speeds of 100 ns/1 μs and a low operation voltage of ± 5 V for the program/erase states. In addition, we observed that a large number of interface states in the bottom oxide were reduced using deep-level transient spectroscopy.

Original language	English
Article number	155105
Journal	Journal of Physics D: Applied Physics
Volume	44
Issue number	15
DOIs	https://doi.org/10.1088/0022-3727/44/15/155105
Publication status	Published - 2011 Apr 20

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Acoustics and Ultrasonics
Surfaces, Coatings and Films

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10.1088/0022-3727/44/15/155105

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title = "High-speed and low-voltage performance in a charge-trapping flash memory using a NiO tunnel junction",

abstract = "A novel charge-trapping nonvolatile memory using gate injection switching is demonstrated in this paper. This device is composed of metal/NiO/nitride/ oxide/silicon in order to make use of the electrical transport phenomenon found in NiO tunnel junctions. Compared with the reference structure of a conventional metal/oxide/nitride/oxide/silicon memory, the proposed device showed a larger memory window, very fast switching speeds of 100 ns/1 μs and a low operation voltage of ± 5 V for the program/erase states. In addition, we observed that a large number of interface states in the bottom oxide were reduced using deep-level transient spectroscopy.",

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AU - Seo, Yujeong

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AU - Kim, Hee Dong

AU - Hwang, In Rok

AU - Hong, Sa Hwan

AU - Park, Bae Ho

AU - Kim, Tae Geun

PY - 2011/4/20

Y1 - 2011/4/20

N2 - A novel charge-trapping nonvolatile memory using gate injection switching is demonstrated in this paper. This device is composed of metal/NiO/nitride/ oxide/silicon in order to make use of the electrical transport phenomenon found in NiO tunnel junctions. Compared with the reference structure of a conventional metal/oxide/nitride/oxide/silicon memory, the proposed device showed a larger memory window, very fast switching speeds of 100 ns/1 μs and a low operation voltage of ± 5 V for the program/erase states. In addition, we observed that a large number of interface states in the bottom oxide were reduced using deep-level transient spectroscopy.

AB - A novel charge-trapping nonvolatile memory using gate injection switching is demonstrated in this paper. This device is composed of metal/NiO/nitride/ oxide/silicon in order to make use of the electrical transport phenomenon found in NiO tunnel junctions. Compared with the reference structure of a conventional metal/oxide/nitride/oxide/silicon memory, the proposed device showed a larger memory window, very fast switching speeds of 100 ns/1 μs and a low operation voltage of ± 5 V for the program/erase states. In addition, we observed that a large number of interface states in the bottom oxide were reduced using deep-level transient spectroscopy.

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High-speed and low-voltage performance in a charge-trapping flash memory using a NiO tunnel junction

Abstract

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