Operation of an optoelectronic integrated circuit which includes two p-i-ns, preamplifiers, 2 × 2 crosspoint switch, and output buffers has been demonstrated. These circuits have been fabricated in semi-insulating InP:Fe substrates by vapor phase epitaxy and ion implantation using a planar horizontally integrated technology. Signals modulated at 150 MHz are shown to be switched at 15 MHz, with the circuits capable of detecting and passing data modulated at ~ 1 GHz.
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Atomic and Molecular Physics, and Optics
- Electrical and Electronic Engineering