High-Speed Signal Switching with a Monolithic Integrated p-i-n/Amp/ Switch on Indium Phosphide

C. W. Seabury, R. B. Bylsma, G. P. Vella-Coleiro, P. S. Davisson, C. M.L. Yee, J. Eng, J. Jeong, S. J. Kim, D. Debis, Y. K. Jhee

Research output: Contribution to journalArticle

8 Citations (Scopus)

Abstract

Operation of an optoelectronic integrated circuit which includes two p-i-ns, preamplifiers, 2 × 2 crosspoint switch, and output buffers has been demonstrated. These circuits have been fabricated in semi-insulating InP:Fe substrates by vapor phase epitaxy and ion implantation using a planar horizontally integrated technology. Signals modulated at 150 MHz are shown to be switched at 15 MHz, with the circuits capable of detecting and passing data modulated at ~ 1 GHz.

Original languageEnglish
Pages (from-to)164-166
Number of pages3
JournalIEEE Photonics Technology Letters
Volume3
Issue number2
DOIs
Publication statusPublished - 1991 Feb

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Electrical and Electronic Engineering

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    Seabury, C. W., Bylsma, R. B., Vella-Coleiro, G. P., Davisson, P. S., Yee, C. M. L., Eng, J., Jeong, J., Kim, S. J., Debis, D., & Jhee, Y. K. (1991). High-Speed Signal Switching with a Monolithic Integrated p-i-n/Amp/ Switch on Indium Phosphide. IEEE Photonics Technology Letters, 3(2), 164-166. https://doi.org/10.1109/68.76877