High temperature GaN based Schottky diode gas sensors

F. Ren, Ji Hyun Kim, B. P. Gila, C. R. Abernathy, S. J. Pearton, A. G. Baca, R. D. Briggs, G. Y. Chung

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

In this paper, high temperature hydrogen gas sensors with GaN and SiC based Schottky diodes were studied using Pd and Pt as Schottky contacts. Here we investigated thermal stability of W and WSi based Schottky metals for high temperature gas sensing. Schottky characteristics were observed for Au/Ti/W/SiC up to 900°C annealing.

Original languageEnglish
Title of host publication2003 International Symposium on Compound Semiconductors, ISCS 2003
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages61-62
Number of pages2
Volume2003-January
ISBN (Electronic)0780378202
DOIs
Publication statusPublished - 2003
Externally publishedYes
Event2003 International Symposium on Compound Semiconductors, ISCS 2003 - San Diego, United States
Duration: 2003 Aug 252003 Aug 27

Other

Other2003 International Symposium on Compound Semiconductors, ISCS 2003
CountryUnited States
CitySan Diego
Period03/8/2503/8/27

Fingerprint

Chemical sensors
Diodes
Hydrogen
Thermodynamic stability
Gases
Metals
Annealing
Temperature

Keywords

  • Annealing
  • Gallium nitride
  • Gas detectors
  • Gold
  • Hydrogen
  • Schottky barriers
  • Schottky diodes
  • Silicon carbide
  • Temperature sensors
  • Thermal stability

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials

Cite this

Ren, F., Kim, J. H., Gila, B. P., Abernathy, C. R., Pearton, S. J., Baca, A. G., ... Chung, G. Y. (2003). High temperature GaN based Schottky diode gas sensors. In 2003 International Symposium on Compound Semiconductors, ISCS 2003 (Vol. 2003-January, pp. 61-62). [1239906] Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/ISCS.2003.1239906

High temperature GaN based Schottky diode gas sensors. / Ren, F.; Kim, Ji Hyun; Gila, B. P.; Abernathy, C. R.; Pearton, S. J.; Baca, A. G.; Briggs, R. D.; Chung, G. Y.

2003 International Symposium on Compound Semiconductors, ISCS 2003. Vol. 2003-January Institute of Electrical and Electronics Engineers Inc., 2003. p. 61-62 1239906.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Ren, F, Kim, JH, Gila, BP, Abernathy, CR, Pearton, SJ, Baca, AG, Briggs, RD & Chung, GY 2003, High temperature GaN based Schottky diode gas sensors. in 2003 International Symposium on Compound Semiconductors, ISCS 2003. vol. 2003-January, 1239906, Institute of Electrical and Electronics Engineers Inc., pp. 61-62, 2003 International Symposium on Compound Semiconductors, ISCS 2003, San Diego, United States, 03/8/25. https://doi.org/10.1109/ISCS.2003.1239906
Ren F, Kim JH, Gila BP, Abernathy CR, Pearton SJ, Baca AG et al. High temperature GaN based Schottky diode gas sensors. In 2003 International Symposium on Compound Semiconductors, ISCS 2003. Vol. 2003-January. Institute of Electrical and Electronics Engineers Inc. 2003. p. 61-62. 1239906 https://doi.org/10.1109/ISCS.2003.1239906
Ren, F. ; Kim, Ji Hyun ; Gila, B. P. ; Abernathy, C. R. ; Pearton, S. J. ; Baca, A. G. ; Briggs, R. D. ; Chung, G. Y. / High temperature GaN based Schottky diode gas sensors. 2003 International Symposium on Compound Semiconductors, ISCS 2003. Vol. 2003-January Institute of Electrical and Electronics Engineers Inc., 2003. pp. 61-62
@inproceedings{979a0997b9234c96a278b27b0dfa0808,
title = "High temperature GaN based Schottky diode gas sensors",
abstract = "In this paper, high temperature hydrogen gas sensors with GaN and SiC based Schottky diodes were studied using Pd and Pt as Schottky contacts. Here we investigated thermal stability of W and WSi based Schottky metals for high temperature gas sensing. Schottky characteristics were observed for Au/Ti/W/SiC up to 900°C annealing.",
keywords = "Annealing, Gallium nitride, Gas detectors, Gold, Hydrogen, Schottky barriers, Schottky diodes, Silicon carbide, Temperature sensors, Thermal stability",
author = "F. Ren and Kim, {Ji Hyun} and Gila, {B. P.} and Abernathy, {C. R.} and Pearton, {S. J.} and Baca, {A. G.} and Briggs, {R. D.} and Chung, {G. Y.}",
year = "2003",
doi = "10.1109/ISCS.2003.1239906",
language = "English",
volume = "2003-January",
pages = "61--62",
booktitle = "2003 International Symposium on Compound Semiconductors, ISCS 2003",
publisher = "Institute of Electrical and Electronics Engineers Inc.",

}

TY - GEN

T1 - High temperature GaN based Schottky diode gas sensors

AU - Ren, F.

AU - Kim, Ji Hyun

AU - Gila, B. P.

AU - Abernathy, C. R.

AU - Pearton, S. J.

AU - Baca, A. G.

AU - Briggs, R. D.

AU - Chung, G. Y.

PY - 2003

Y1 - 2003

N2 - In this paper, high temperature hydrogen gas sensors with GaN and SiC based Schottky diodes were studied using Pd and Pt as Schottky contacts. Here we investigated thermal stability of W and WSi based Schottky metals for high temperature gas sensing. Schottky characteristics were observed for Au/Ti/W/SiC up to 900°C annealing.

AB - In this paper, high temperature hydrogen gas sensors with GaN and SiC based Schottky diodes were studied using Pd and Pt as Schottky contacts. Here we investigated thermal stability of W and WSi based Schottky metals for high temperature gas sensing. Schottky characteristics were observed for Au/Ti/W/SiC up to 900°C annealing.

KW - Annealing

KW - Gallium nitride

KW - Gas detectors

KW - Gold

KW - Hydrogen

KW - Schottky barriers

KW - Schottky diodes

KW - Silicon carbide

KW - Temperature sensors

KW - Thermal stability

UR - http://www.scopus.com/inward/record.url?scp=84943531086&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84943531086&partnerID=8YFLogxK

U2 - 10.1109/ISCS.2003.1239906

DO - 10.1109/ISCS.2003.1239906

M3 - Conference contribution

VL - 2003-January

SP - 61

EP - 62

BT - 2003 International Symposium on Compound Semiconductors, ISCS 2003

PB - Institute of Electrical and Electronics Engineers Inc.

ER -