High temperature GaN based Schottky diode gas sensors

F. Ren, Ji Hyun Kim, B. P. Gila, C. R. Abernathy, S. J. Pearton, A. G. Baca, R. D. Briggs, G. Y. Chung

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

In this paper, high temperature hydrogen gas sensors with GaN and SiC based Schottky diodes were studied using Pd and Pt as Schottky contacts. Here we investigated thermal stability of W and WSi based Schottky metals for high temperature gas sensing. Schottky characteristics were observed for Au/Ti/W/SiC up to 900°C annealing.

Original languageEnglish
Title of host publication2003 International Symposium on Compound Semiconductors, ISCS 2003
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages61-62
Number of pages2
Volume2003-January
ISBN (Electronic)0780378202
DOIs
Publication statusPublished - 2003
Externally publishedYes
Event2003 International Symposium on Compound Semiconductors, ISCS 2003 - San Diego, United States
Duration: 2003 Aug 252003 Aug 27

Other

Other2003 International Symposium on Compound Semiconductors, ISCS 2003
CountryUnited States
CitySan Diego
Period03/8/2503/8/27

Keywords

  • Annealing
  • Gallium nitride
  • Gas detectors
  • Gold
  • Hydrogen
  • Schottky barriers
  • Schottky diodes
  • Silicon carbide
  • Temperature sensors
  • Thermal stability

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials

Fingerprint Dive into the research topics of 'High temperature GaN based Schottky diode gas sensors'. Together they form a unique fingerprint.

Cite this