High-temperature stability of molybdenum (Mo) back contacts for CIGS solar cells

A route towards more robust back contacts

Ju Heon Yoon, Kwan Hee Yoon, Won Mok Kim, Jong Keuk Park, Young Joon Baik, Tae Yeon Seong, Jeung Hyun Jeong

Research output: Contribution to journalArticle

23 Citations (Scopus)

Abstract

The thermal stability of Mo thin films is indispensable to Cu(In,Ga)Se 2 (CIGS) solar cells: CIGS films are deposited above 500 °C. The thermal stabilities of Mo thin films with dense to porous Mo microstructures, which are varied by controlling the sputtering pressure, are investigated. Interface failures are found to occur in buckling mode in denser Mo films, whereas cracking arises in less dense films. The failure modes are apparently dependent on the sign of the residual stress: the former is due to compressive stress, whereas the latter is due to tensile stress. Interestingly, the softening of soda-lime glass at high temperatures reconfigures the film stresses to be more compressive after annealing, which in turn triggers buckling even in films that are tensile-stressed in the as-deposited states. We conclude that the appropriate processing conditions for thermally stable back contacts cannot be obtained with the simple single layer approach. On the basis of this relationship between microstructure, residual stress and the failure modes, it is shown that improvements in film adhesion can widen the processing window for the preparation of robust back contacts, i.e. with a conventional bilayer approach and substrate roughening. Since the bilayer approach employed more compliant porous structures in the bottom layer, back contacts that are better suited to higher stress and temperature can be produced. Furthermore, substrate roughening might make the back contact more conductive as well as more stable because adhesion can be enhanced without the use of an electrically resistive buffer layer.

Original languageEnglish
Article number425302
JournalJournal of Physics D: Applied Physics
Volume44
Issue number42
DOIs
Publication statusPublished - 2011 Oct 26

Fingerprint

Molybdenum
molybdenum
Solar cells
solar cells
routes
failure modes
buckling
Temperature
Failure modes
residual stress
Buckling
Residual stresses
adhesion
Thermodynamic stability
thermal stability
Adhesion
Thin films
microstructure
Microstructure
calcium oxides

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Electronic, Optical and Magnetic Materials
  • Acoustics and Ultrasonics
  • Surfaces, Coatings and Films

Cite this

High-temperature stability of molybdenum (Mo) back contacts for CIGS solar cells : A route towards more robust back contacts. / Yoon, Ju Heon; Yoon, Kwan Hee; Kim, Won Mok; Park, Jong Keuk; Baik, Young Joon; Seong, Tae Yeon; Jeong, Jeung Hyun.

In: Journal of Physics D: Applied Physics, Vol. 44, No. 42, 425302, 26.10.2011.

Research output: Contribution to journalArticle

Yoon, Ju Heon ; Yoon, Kwan Hee ; Kim, Won Mok ; Park, Jong Keuk ; Baik, Young Joon ; Seong, Tae Yeon ; Jeong, Jeung Hyun. / High-temperature stability of molybdenum (Mo) back contacts for CIGS solar cells : A route towards more robust back contacts. In: Journal of Physics D: Applied Physics. 2011 ; Vol. 44, No. 42.
@article{50ccdf332a2b41d6ac3223036001cdfa,
title = "High-temperature stability of molybdenum (Mo) back contacts for CIGS solar cells: A route towards more robust back contacts",
abstract = "The thermal stability of Mo thin films is indispensable to Cu(In,Ga)Se 2 (CIGS) solar cells: CIGS films are deposited above 500 °C. The thermal stabilities of Mo thin films with dense to porous Mo microstructures, which are varied by controlling the sputtering pressure, are investigated. Interface failures are found to occur in buckling mode in denser Mo films, whereas cracking arises in less dense films. The failure modes are apparently dependent on the sign of the residual stress: the former is due to compressive stress, whereas the latter is due to tensile stress. Interestingly, the softening of soda-lime glass at high temperatures reconfigures the film stresses to be more compressive after annealing, which in turn triggers buckling even in films that are tensile-stressed in the as-deposited states. We conclude that the appropriate processing conditions for thermally stable back contacts cannot be obtained with the simple single layer approach. On the basis of this relationship between microstructure, residual stress and the failure modes, it is shown that improvements in film adhesion can widen the processing window for the preparation of robust back contacts, i.e. with a conventional bilayer approach and substrate roughening. Since the bilayer approach employed more compliant porous structures in the bottom layer, back contacts that are better suited to higher stress and temperature can be produced. Furthermore, substrate roughening might make the back contact more conductive as well as more stable because adhesion can be enhanced without the use of an electrically resistive buffer layer.",
author = "Yoon, {Ju Heon} and Yoon, {Kwan Hee} and Kim, {Won Mok} and Park, {Jong Keuk} and Baik, {Young Joon} and Seong, {Tae Yeon} and Jeong, {Jeung Hyun}",
year = "2011",
month = "10",
day = "26",
doi = "10.1088/0022-3727/44/42/425302",
language = "English",
volume = "44",
journal = "Journal Physics D: Applied Physics",
issn = "0022-3727",
publisher = "IOP Publishing Ltd.",
number = "42",

}

TY - JOUR

T1 - High-temperature stability of molybdenum (Mo) back contacts for CIGS solar cells

T2 - A route towards more robust back contacts

AU - Yoon, Ju Heon

AU - Yoon, Kwan Hee

AU - Kim, Won Mok

AU - Park, Jong Keuk

AU - Baik, Young Joon

AU - Seong, Tae Yeon

AU - Jeong, Jeung Hyun

PY - 2011/10/26

Y1 - 2011/10/26

N2 - The thermal stability of Mo thin films is indispensable to Cu(In,Ga)Se 2 (CIGS) solar cells: CIGS films are deposited above 500 °C. The thermal stabilities of Mo thin films with dense to porous Mo microstructures, which are varied by controlling the sputtering pressure, are investigated. Interface failures are found to occur in buckling mode in denser Mo films, whereas cracking arises in less dense films. The failure modes are apparently dependent on the sign of the residual stress: the former is due to compressive stress, whereas the latter is due to tensile stress. Interestingly, the softening of soda-lime glass at high temperatures reconfigures the film stresses to be more compressive after annealing, which in turn triggers buckling even in films that are tensile-stressed in the as-deposited states. We conclude that the appropriate processing conditions for thermally stable back contacts cannot be obtained with the simple single layer approach. On the basis of this relationship between microstructure, residual stress and the failure modes, it is shown that improvements in film adhesion can widen the processing window for the preparation of robust back contacts, i.e. with a conventional bilayer approach and substrate roughening. Since the bilayer approach employed more compliant porous structures in the bottom layer, back contacts that are better suited to higher stress and temperature can be produced. Furthermore, substrate roughening might make the back contact more conductive as well as more stable because adhesion can be enhanced without the use of an electrically resistive buffer layer.

AB - The thermal stability of Mo thin films is indispensable to Cu(In,Ga)Se 2 (CIGS) solar cells: CIGS films are deposited above 500 °C. The thermal stabilities of Mo thin films with dense to porous Mo microstructures, which are varied by controlling the sputtering pressure, are investigated. Interface failures are found to occur in buckling mode in denser Mo films, whereas cracking arises in less dense films. The failure modes are apparently dependent on the sign of the residual stress: the former is due to compressive stress, whereas the latter is due to tensile stress. Interestingly, the softening of soda-lime glass at high temperatures reconfigures the film stresses to be more compressive after annealing, which in turn triggers buckling even in films that are tensile-stressed in the as-deposited states. We conclude that the appropriate processing conditions for thermally stable back contacts cannot be obtained with the simple single layer approach. On the basis of this relationship between microstructure, residual stress and the failure modes, it is shown that improvements in film adhesion can widen the processing window for the preparation of robust back contacts, i.e. with a conventional bilayer approach and substrate roughening. Since the bilayer approach employed more compliant porous structures in the bottom layer, back contacts that are better suited to higher stress and temperature can be produced. Furthermore, substrate roughening might make the back contact more conductive as well as more stable because adhesion can be enhanced without the use of an electrically resistive buffer layer.

UR - http://www.scopus.com/inward/record.url?scp=80055087062&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=80055087062&partnerID=8YFLogxK

U2 - 10.1088/0022-3727/44/42/425302

DO - 10.1088/0022-3727/44/42/425302

M3 - Article

VL - 44

JO - Journal Physics D: Applied Physics

JF - Journal Physics D: Applied Physics

SN - 0022-3727

IS - 42

M1 - 425302

ER -