High-temperature stable operation of nanoribbon field-effect transistors

Chang Young Choi, Ji Hoon Lee, Jung Hyuk Koh, Jae Geun Ha, Sang Mo Koo, Sangsig Kim

Research output: Contribution to journalArticle

3 Citations (Scopus)

Abstract

We experimentally demonstrated that nanoribbon field-effect transistors can be used for stable high-temperature applications. The on-current level of the nanoribbon FETs decreases at elevated temperatures due to the degradation of the electron mobility. We propose two methods of compensating for the variation of the current level with the temperature in the range of 25-150°C, involving the application of a suitable (1) positive or (2) negative substrate bias. These two methods were compared by two-dimensional numerical simulations. Although both approaches show constant on-state current saturation characteristics over the proposed temperature range, the latter shows an improvement in the off-state control of up to five orders of magnitude (-5.2 × 10 -6).

Original languageEnglish
Pages (from-to)1795-1799
Number of pages5
JournalNanoscale Research Letters
Volume5
Issue number11
DOIs
Publication statusPublished - 2010 Nov 1

Fingerprint

Nanoribbons
Carbon Nanotubes
Field effect transistors
field effect transistors
High temperature applications
Electron mobility
electron mobility
Temperature
temperature
degradation
saturation
Degradation
Computer simulation
Substrates
simulation

Keywords

  • Electron mobility
  • Field-effect transistors (FETs)
  • Nanoribbon FET
  • Variation of the current level

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics

Cite this

High-temperature stable operation of nanoribbon field-effect transistors. / Choi, Chang Young; Lee, Ji Hoon; Koh, Jung Hyuk; Ha, Jae Geun; Koo, Sang Mo; Kim, Sangsig.

In: Nanoscale Research Letters, Vol. 5, No. 11, 01.11.2010, p. 1795-1799.

Research output: Contribution to journalArticle

Choi, Chang Young ; Lee, Ji Hoon ; Koh, Jung Hyuk ; Ha, Jae Geun ; Koo, Sang Mo ; Kim, Sangsig. / High-temperature stable operation of nanoribbon field-effect transistors. In: Nanoscale Research Letters. 2010 ; Vol. 5, No. 11. pp. 1795-1799.
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