The thermal stability of Au/Ti/WSix contacts on 4H-SiC was examined by Auger electron spectroscopy and current-voltage measurements. The silicide-based contacts on SiC are found to exhibit improved thermal stability compared to pure W contacts. The Au/Ti/WSix contacts show a maximum Schottky barrier height of ∼1.15 eV as obtained from current-voltage (I-V) measurements. After 500 °C anneals, the Ti diffuses to the surface of the contact structure, followed by a Au-rich layer and finally the WSix. After 1000 °C anneals, the Ti and Au showed significant mixing. Particulates formed on the surface in the latter case were Au-rich phases.
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Electrical and Electronic Engineering
- Materials Chemistry