High temperature thermal stability of Au/Ti/WSix Schottky contacts on n-type 4H-SiC

Jihyun Kim, F. Ren, A. G. Baca, R. D. Briggs, S. J. Pearton

Research output: Contribution to journalArticle

4 Citations (Scopus)

Abstract

The thermal stability of Au/Ti/WSix contacts on 4H-SiC was examined by Auger electron spectroscopy and current-voltage measurements. The silicide-based contacts on SiC are found to exhibit improved thermal stability compared to pure W contacts. The Au/Ti/WSix contacts show a maximum Schottky barrier height of ∼1.15 eV as obtained from current-voltage (I-V) measurements. After 500 °C anneals, the Ti diffuses to the surface of the contact structure, followed by a Au-rich layer and finally the WSix. After 1000 °C anneals, the Ti and Au showed significant mixing. Particulates formed on the surface in the latter case were Au-rich phases.

Original languageEnglish
Pages (from-to)1345-1350
Number of pages6
JournalSolid-State Electronics
Volume47
Issue number8
DOIs
Publication statusPublished - 2003 Aug
Externally publishedYes

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

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