High-temperature treatment of In-doped CZT crystals grown by the high-pressure Bridgman method

P. Fochuk, I. Nakonechnyi, O. Kopach, Ye Verzhak, O. Panchuk, V. Komar, I. Terzin, V. Kutnij, A. Rybka, Ye Nykoniuk, A. E. Bolotnikov, G. C. Camarda, Y. Cui, A. Hossain, K. H. Kim, G. Yang, R. B. James

Research output: Chapter in Book/Report/Conference proceedingConference contribution

6 Citations (Scopus)

Abstract

We evaluated the effect of high-temperature treatment of Cd 0.9Zn0.1Te:In single crystals using Hall-effect measurements, medium- and high-temperature annealing under various deviations from stoichiometry, and infra-red (IR) transmission microscopy Annealing at ∼730 K sharply increased the electrical conductivity (by ∼1-2 orders-of-magnitude). Plots of the temperature- and cadmium-pressure dependences of the electrical conductivity, carrier concentration, and mobility were obtained. Treating previously annealed Cd-samples under a Te overpressure at 1070 K allowed us to restore their resistance to its initial high values. The main difference in comparing this material with CdTe was its lowered electron density. We explained our results within the framework of Kröger's theory of quasi-chemical reactions between point defects in solids.

Original languageEnglish
Title of host publicationHard X-Ray, Gamma-Ray, and Neutron Detector Physics XIV
DOIs
Publication statusPublished - 2012
EventHard X-Ray, Gamma-Ray, and Neutron Detector Physics XIV - San Diego, CA, United States
Duration: 2012 Aug 132012 Aug 15

Publication series

NameProceedings of SPIE - The International Society for Optical Engineering
Volume8507
ISSN (Print)0277-786X

Conference

ConferenceHard X-Ray, Gamma-Ray, and Neutron Detector Physics XIV
CountryUnited States
CitySan Diego, CA
Period12/8/1312/8/15

Keywords

  • Annealing
  • CdZnTe: In
  • Hall effect
  • High-pressure Bridgman growth method
  • Inclusions
  • Point defects
  • Single crystals

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Computer Science Applications
  • Applied Mathematics
  • Electrical and Electronic Engineering

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  • Cite this

    Fochuk, P., Nakonechnyi, I., Kopach, O., Verzhak, Y., Panchuk, O., Komar, V., Terzin, I., Kutnij, V., Rybka, A., Nykoniuk, Y., Bolotnikov, A. E., Camarda, G. C., Cui, Y., Hossain, A., Kim, K. H., Yang, G., & James, R. B. (2012). High-temperature treatment of In-doped CZT crystals grown by the high-pressure Bridgman method. In Hard X-Ray, Gamma-Ray, and Neutron Detector Physics XIV [85071L] (Proceedings of SPIE - The International Society for Optical Engineering; Vol. 8507). https://doi.org/10.1117/12.929035