Abstract
MBE-deposited Sc2O3 films are found to effectively passivate surface states in the gate-drain region of AlGaN/GaN HEMTs. The effect of the passivation is observed in higher forward IDS-VDS three-terminal breakdown voltage and output power under class A operation. In the latter case, the power-added efficiency was at least doubled.
Original language | English |
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Pages (from-to) | 809-810 |
Number of pages | 2 |
Journal | Electronics Letters |
Volume | 39 |
Issue number | 10 |
DOIs | |
Publication status | Published - 2003 May 15 |
Externally published | Yes |
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ASJC Scopus subject areas
- Electrical and Electronic Engineering
Cite this
High three-terminal breakdown voltage and output power of Sc2O3 passivated AlGaN/GaN high electron mobility transistors. / Luo, B.; Mehandru, R.; Kim, Ji Hyun; Ren, F.; Gila, B. P.; Onstine, A. H.; Abernathy, C. R.; Pearton, S. J.; Gotthold, D.; Birkhahn, R.; Peres, B.; Fitch, R. C.; Moser, N.; Gillespie, J. K.; Jenkins, T.; Sewell, J.; Via, D.; Crespo, A.
In: Electronics Letters, Vol. 39, No. 10, 15.05.2003, p. 809-810.Research output: Contribution to journal › Article
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TY - JOUR
T1 - High three-terminal breakdown voltage and output power of Sc2O3 passivated AlGaN/GaN high electron mobility transistors
AU - Luo, B.
AU - Mehandru, R.
AU - Kim, Ji Hyun
AU - Ren, F.
AU - Gila, B. P.
AU - Onstine, A. H.
AU - Abernathy, C. R.
AU - Pearton, S. J.
AU - Gotthold, D.
AU - Birkhahn, R.
AU - Peres, B.
AU - Fitch, R. C.
AU - Moser, N.
AU - Gillespie, J. K.
AU - Jenkins, T.
AU - Sewell, J.
AU - Via, D.
AU - Crespo, A.
PY - 2003/5/15
Y1 - 2003/5/15
N2 - MBE-deposited Sc2O3 films are found to effectively passivate surface states in the gate-drain region of AlGaN/GaN HEMTs. The effect of the passivation is observed in higher forward IDS-VDS three-terminal breakdown voltage and output power under class A operation. In the latter case, the power-added efficiency was at least doubled.
AB - MBE-deposited Sc2O3 films are found to effectively passivate surface states in the gate-drain region of AlGaN/GaN HEMTs. The effect of the passivation is observed in higher forward IDS-VDS three-terminal breakdown voltage and output power under class A operation. In the latter case, the power-added efficiency was at least doubled.
UR - http://www.scopus.com/inward/record.url?scp=0038010742&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=0038010742&partnerID=8YFLogxK
U2 - 10.1049/el:20030525
DO - 10.1049/el:20030525
M3 - Article
AN - SCOPUS:0038010742
VL - 39
SP - 809
EP - 810
JO - Electronics Letters
JF - Electronics Letters
SN - 0013-5194
IS - 10
ER -