High three-terminal breakdown voltage and output power of Sc2O3 passivated AlGaN/GaN high electron mobility transistors

B. Luo; R. Mehandru; Jihyun Kim; F. Ren; B. P. Gila; A. H. Onstine; C. R. Abernathy; S. J. Pearton; D. Gotthold; R. Birkhahn; B. Peres; R. C. Fitch; N. Moser; J. K. Gillespie; T. Jenkins; J. Sewell; D. Via; A. Crespo

doi:10.1049/el:20030525

High three-terminal breakdown voltage and output power of Sc₂O₃ passivated AlGaN/GaN high electron mobility transistors

B. Luo, R. Mehandru, Jihyun Kim, F. Ren, B. P. Gila, A. H. Onstine, C. R. Abernathy, S. J. Pearton, D. Gotthold, R. Birkhahn, B. Peres, R. C. Fitch, N. Moser, J. K. Gillespie, T. Jenkins, J. Sewell, D. Via, A. Crespo

Research output: Contribution to journal › Article › peer-review

5 Citations (Scopus)

Abstract

MBE-deposited Sc₂O₃ films are found to effectively passivate surface states in the gate-drain region of AlGaN/GaN HEMTs. The effect of the passivation is observed in higher forward I_DS-V_DS three-terminal breakdown voltage and output power under class A operation. In the latter case, the power-added efficiency was at least doubled.

Original language	English
Pages (from-to)	809-810
Number of pages	2
Journal	Electronics Letters
Volume	39
Issue number	10
DOIs	https://doi.org/10.1049/el:20030525
Publication status	Published - 2003 May 15
Externally published	Yes

ASJC Scopus subject areas

Electrical and Electronic Engineering

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10.1049/el:20030525

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Luo, B., Mehandru, R., Kim, J., Ren, F., Gila, B. P., Onstine, A. H., Abernathy, C. R., Pearton, S. J., Gotthold, D., Birkhahn, R., Peres, B., Fitch, R. C., Moser, N., Gillespie, J. K., Jenkins, T., Sewell, J., Via, D., & Crespo, A. (2003). High three-terminal breakdown voltage and output power of Sc₂O₃ passivated AlGaN/GaN high electron mobility transistors. Electronics Letters, 39(10), 809-810. https://doi.org/10.1049/el:20030525

High three-terminal breakdown voltage and output power of Sc₂O₃ passivated AlGaN/GaN high electron mobility transistors. / Luo, B.; Mehandru, R.; Kim, Jihyun; Ren, F.; Gila, B. P.; Onstine, A. H.; Abernathy, C. R.; Pearton, S. J.; Gotthold, D.; Birkhahn, R.; Peres, B.; Fitch, R. C.; Moser, N.; Gillespie, J. K.; Jenkins, T.; Sewell, J.; Via, D.; Crespo, A.

In: Electronics Letters, Vol. 39, No. 10, 15.05.2003, p. 809-810.

Research output: Contribution to journal › Article › peer-review

Luo, B, Mehandru, R, Kim, J, Ren, F, Gila, BP, Onstine, AH, Abernathy, CR, Pearton, SJ, Gotthold, D, Birkhahn, R, Peres, B, Fitch, RC, Moser, N, Gillespie, JK, Jenkins, T, Sewell, J, Via, D & Crespo, A 2003, 'High three-terminal breakdown voltage and output power of Sc₂O₃ passivated AlGaN/GaN high electron mobility transistors', Electronics Letters, vol. 39, no. 10, pp. 809-810. https://doi.org/10.1049/el:20030525

Luo, B. ; Mehandru, R. ; Kim, Jihyun ; Ren, F. ; Gila, B. P. ; Onstine, A. H. ; Abernathy, C. R. ; Pearton, S. J. ; Gotthold, D. ; Birkhahn, R. ; Peres, B. ; Fitch, R. C. ; Moser, N. ; Gillespie, J. K. ; Jenkins, T. ; Sewell, J. ; Via, D. ; Crespo, A. / High three-terminal breakdown voltage and output power of Sc₂O₃ passivated AlGaN/GaN high electron mobility transistors. In: Electronics Letters. 2003 ; Vol. 39, No. 10. pp. 809-810.

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abstract = "MBE-deposited Sc2O3 films are found to effectively passivate surface states in the gate-drain region of AlGaN/GaN HEMTs. The effect of the passivation is observed in higher forward IDS-VDS three-terminal breakdown voltage and output power under class A operation. In the latter case, the power-added efficiency was at least doubled.",

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AU - Mehandru, R.

AU - Kim, Jihyun

AU - Ren, F.

AU - Gila, B. P.

AU - Onstine, A. H.

AU - Abernathy, C. R.

AU - Pearton, S. J.

AU - Gotthold, D.

AU - Birkhahn, R.

AU - Peres, B.

AU - Fitch, R. C.

AU - Moser, N.

AU - Gillespie, J. K.

AU - Jenkins, T.

AU - Sewell, J.

AU - Via, D.

AU - Crespo, A.

PY - 2003/5/15

Y1 - 2003/5/15

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AB - MBE-deposited Sc2O3 films are found to effectively passivate surface states in the gate-drain region of AlGaN/GaN HEMTs. The effect of the passivation is observed in higher forward IDS-VDS three-terminal breakdown voltage and output power under class A operation. In the latter case, the power-added efficiency was at least doubled.

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High three-terminal breakdown voltage and output power of Sc₂O₃ passivated AlGaN/GaN high electron mobility transistors

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