High three-terminal breakdown voltage and output power of Sc2O3 passivated AlGaN/GaN high electron mobility transistors

B. Luo, R. Mehandru, Jihyun Kim, F. Ren, B. P. Gila, A. H. Onstine, C. R. Abernathy, S. J. Pearton, D. Gotthold, R. Birkhahn, B. Peres, R. C. Fitch, N. Moser, J. K. Gillespie, T. Jenkins, J. Sewell, D. Via, A. Crespo

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Abstract

MBE-deposited Sc2O3 films are found to effectively passivate surface states in the gate-drain region of AlGaN/GaN HEMTs. The effect of the passivation is observed in higher forward IDS-VDS three-terminal breakdown voltage and output power under class A operation. In the latter case, the power-added efficiency was at least doubled.

Original languageEnglish
Pages (from-to)809-810
Number of pages2
JournalElectronics Letters
Volume39
Issue number10
DOIs
Publication statusPublished - 2003 May 15

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ASJC Scopus subject areas

  • Electrical and Electronic Engineering

Cite this

Luo, B., Mehandru, R., Kim, J., Ren, F., Gila, B. P., Onstine, A. H., Abernathy, C. R., Pearton, S. J., Gotthold, D., Birkhahn, R., Peres, B., Fitch, R. C., Moser, N., Gillespie, J. K., Jenkins, T., Sewell, J., Via, D., & Crespo, A. (2003). High three-terminal breakdown voltage and output power of Sc2O3 passivated AlGaN/GaN high electron mobility transistors. Electronics Letters, 39(10), 809-810. https://doi.org/10.1049/el:20030525