High three-terminal breakdown voltage and output power of Sc2O3 passivated AlGaN/GaN high electron mobility transistors

B. Luo; R. Mehandru; Jihyun Kim; F. Ren; B. P. Gila; A. H. Onstine; C. R. Abernathy; S. J. Pearton; D. Gotthold; R. Birkhahn; B. Peres; R. C. Fitch; N. Moser; J. K. Gillespie; T. Jenkins; J. Sewell; D. Via; A. Crespo

doi:10.1049/el:20030525

High three-terminal breakdown voltage and output power of Sc₂O₃ passivated AlGaN/GaN high electron mobility transistors

B. Luo, R. Mehandru, Jihyun Kim, F. Ren, B. P. Gila, A. H. Onstine, C. R. Abernathy, S. J. Pearton, D. Gotthold, R. Birkhahn, B. Peres, R. C. Fitch, N. Moser, J. K. Gillespie, T. Jenkins, J. Sewell, D. Via, A. Crespo

Department of Chemical and Biological Engineering

Research output: Contribution to journal › Article

5 Citations (Scopus)

Abstract

MBE-deposited Sc₂O₃ films are found to effectively passivate surface states in the gate-drain region of AlGaN/GaN HEMTs. The effect of the passivation is observed in higher forward I_DS-V_DS three-terminal breakdown voltage and output power under class A operation. In the latter case, the power-added efficiency was at least doubled.

Original language	English
Pages (from-to)	809-810
Number of pages	2
Journal	Electronics Letters
Volume	39
Issue number	10
DOIs	https://doi.org/10.1049/el:20030525
Publication status	Published - 2003 May 15

Fingerprint

ASJC Scopus subject areas

Electrical and Electronic Engineering

Cite this

Luo, B., Mehandru, R., Kim, J., Ren, F., Gila, B. P., Onstine, A. H., Abernathy, C. R., Pearton, S. J., Gotthold, D., Birkhahn, R., Peres, B., Fitch, R. C., Moser, N., Gillespie, J. K., Jenkins, T., Sewell, J., Via, D., & Crespo, A. (2003). High three-terminal breakdown voltage and output power of Sc₂O₃ passivated AlGaN/GaN high electron mobility transistors. Electronics Letters, 39(10), 809-810. https://doi.org/10.1049/el:20030525

High three-terminal breakdown voltage and output power of Sc₂O₃ passivated AlGaN/GaN high electron mobility transistors. / Luo, B.; Mehandru, R.; Kim, Jihyun; Ren, F.; Gila, B. P.; Onstine, A. H.; Abernathy, C. R.; Pearton, S. J.; Gotthold, D.; Birkhahn, R.; Peres, B.; Fitch, R. C.; Moser, N.; Gillespie, J. K.; Jenkins, T.; Sewell, J.; Via, D.; Crespo, A.

In: Electronics Letters, Vol. 39, No. 10, 15.05.2003, p. 809-810.

Research output: Contribution to journal › Article

Luo, B, Mehandru, R, Kim, J, Ren, F, Gila, BP, Onstine, AH, Abernathy, CR, Pearton, SJ, Gotthold, D, Birkhahn, R, Peres, B, Fitch, RC, Moser, N, Gillespie, JK, Jenkins, T, Sewell, J, Via, D & Crespo, A 2003, 'High three-terminal breakdown voltage and output power of Sc₂O₃ passivated AlGaN/GaN high electron mobility transistors', Electronics Letters, vol. 39, no. 10, pp. 809-810. https://doi.org/10.1049/el:20030525

Luo, B. ; Mehandru, R. ; Kim, Jihyun ; Ren, F. ; Gila, B. P. ; Onstine, A. H. ; Abernathy, C. R. ; Pearton, S. J. ; Gotthold, D. ; Birkhahn, R. ; Peres, B. ; Fitch, R. C. ; Moser, N. ; Gillespie, J. K. ; Jenkins, T. ; Sewell, J. ; Via, D. ; Crespo, A. / High three-terminal breakdown voltage and output power of Sc₂O₃ passivated AlGaN/GaN high electron mobility transistors. In: Electronics Letters. 2003 ; Vol. 39, No. 10. pp. 809-810.

@article{00f9fb5483e2435d951c7dbaccc1fb7e,

title = "High three-terminal breakdown voltage and output power of Sc2O3 passivated AlGaN/GaN high electron mobility transistors",

abstract = "MBE-deposited Sc2O3 films are found to effectively passivate surface states in the gate-drain region of AlGaN/GaN HEMTs. The effect of the passivation is observed in higher forward IDS-VDS three-terminal breakdown voltage and output power under class A operation. In the latter case, the power-added efficiency was at least doubled.",

author = "B. Luo and R. Mehandru and Jihyun Kim and F. Ren and Gila, {B. P.} and Onstine, {A. H.} and Abernathy, {C. R.} and Pearton, {S. J.} and D. Gotthold and R. Birkhahn and B. Peres and Fitch, {R. C.} and N. Moser and Gillespie, {J. K.} and T. Jenkins and J. Sewell and D. Via and A. Crespo",

year = "2003",

month = may

day = "15",

doi = "10.1049/el:20030525",

language = "English",

volume = "39",

pages = "809--810",

journal = "Electronics Letters",

issn = "0013-5194",

publisher = "Institution of Engineering and Technology",

number = "10",

}

TY - JOUR

T1 - High three-terminal breakdown voltage and output power of Sc2O3 passivated AlGaN/GaN high electron mobility transistors

AU - Luo, B.

AU - Mehandru, R.

AU - Kim, Jihyun

AU - Ren, F.

AU - Gila, B. P.

AU - Onstine, A. H.

AU - Abernathy, C. R.

AU - Pearton, S. J.

AU - Gotthold, D.

AU - Birkhahn, R.

AU - Peres, B.

AU - Fitch, R. C.

AU - Moser, N.

AU - Gillespie, J. K.

AU - Jenkins, T.

AU - Sewell, J.

AU - Via, D.

AU - Crespo, A.

PY - 2003/5/15

Y1 - 2003/5/15

N2 - MBE-deposited Sc2O3 films are found to effectively passivate surface states in the gate-drain region of AlGaN/GaN HEMTs. The effect of the passivation is observed in higher forward IDS-VDS three-terminal breakdown voltage and output power under class A operation. In the latter case, the power-added efficiency was at least doubled.

AB - MBE-deposited Sc2O3 films are found to effectively passivate surface states in the gate-drain region of AlGaN/GaN HEMTs. The effect of the passivation is observed in higher forward IDS-VDS three-terminal breakdown voltage and output power under class A operation. In the latter case, the power-added efficiency was at least doubled.

UR - http://www.scopus.com/inward/record.url?scp=0038010742&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0038010742&partnerID=8YFLogxK

U2 - 10.1049/el:20030525

DO - 10.1049/el:20030525

M3 - Article

AN - SCOPUS:0038010742

VL - 39

SP - 809

EP - 810

JO - Electronics Letters

JF - Electronics Letters

SN - 0013-5194

IS - 10

ER -

Access to Document

10.1049/el:20030525