High three-terminal breakdown voltage and output power of Sc2O3 passivated AlGaN/GaN high electron mobility transistors

B. Luo, R. Mehandru, Jihyun Kim, F. Ren, B. P. Gila, A. H. Onstine, C. R. Abernathy, S. J. Pearton, D. Gotthold, R. Birkhahn, B. Peres, R. C. Fitch, N. Moser, J. K. Gillespie, T. Jenkins, J. Sewell, D. Via, A. Crespo

Research output: Contribution to journalArticle

5 Citations (Scopus)

Abstract

MBE-deposited Sc2O3 films are found to effectively passivate surface states in the gate-drain region of AlGaN/GaN HEMTs. The effect of the passivation is observed in higher forward IDS-VDS three-terminal breakdown voltage and output power under class A operation. In the latter case, the power-added efficiency was at least doubled.

Original languageEnglish
Pages (from-to)809-810
Number of pages2
JournalElectronics Letters
Volume39
Issue number10
DOIs
Publication statusPublished - 2003 May 15

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

Fingerprint Dive into the research topics of 'High three-terminal breakdown voltage and output power of Sc<sub>2</sub>O<sub>3</sub> passivated AlGaN/GaN high electron mobility transistors'. Together they form a unique fingerprint.

  • Cite this

    Luo, B., Mehandru, R., Kim, J., Ren, F., Gila, B. P., Onstine, A. H., Abernathy, C. R., Pearton, S. J., Gotthold, D., Birkhahn, R., Peres, B., Fitch, R. C., Moser, N., Gillespie, J. K., Jenkins, T., Sewell, J., Via, D., & Crespo, A. (2003). High three-terminal breakdown voltage and output power of Sc2O3 passivated AlGaN/GaN high electron mobility transistors. Electronics Letters, 39(10), 809-810. https://doi.org/10.1049/el:20030525