High three-terminal breakdown voltage and output power of Sc2O3 passivated AlGaN/GaN high electron mobility transistors

B. Luo, R. Mehandru, Ji Hyun Kim, F. Ren, B. P. Gila, A. H. Onstine, C. R. Abernathy, S. J. Pearton, D. Gotthold, R. Birkhahn, B. Peres, R. C. Fitch, N. Moser, J. K. Gillespie, T. Jenkins, J. Sewell, D. Via, A. Crespo

Research output: Contribution to journalArticle

5 Citations (Scopus)

Abstract

MBE-deposited Sc2O3 films are found to effectively passivate surface states in the gate-drain region of AlGaN/GaN HEMTs. The effect of the passivation is observed in higher forward IDS-VDS three-terminal breakdown voltage and output power under class A operation. In the latter case, the power-added efficiency was at least doubled.

Original languageEnglish
Pages (from-to)809-810
Number of pages2
JournalElectronics Letters
Volume39
Issue number10
DOIs
Publication statusPublished - 2003 May 15
Externally publishedYes

Fingerprint

Surface states
High electron mobility transistors
Electric breakdown
Passivation
Molecular beam epitaxy

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

Cite this

High three-terminal breakdown voltage and output power of Sc2O3 passivated AlGaN/GaN high electron mobility transistors. / Luo, B.; Mehandru, R.; Kim, Ji Hyun; Ren, F.; Gila, B. P.; Onstine, A. H.; Abernathy, C. R.; Pearton, S. J.; Gotthold, D.; Birkhahn, R.; Peres, B.; Fitch, R. C.; Moser, N.; Gillespie, J. K.; Jenkins, T.; Sewell, J.; Via, D.; Crespo, A.

In: Electronics Letters, Vol. 39, No. 10, 15.05.2003, p. 809-810.

Research output: Contribution to journalArticle

Luo, B, Mehandru, R, Kim, JH, Ren, F, Gila, BP, Onstine, AH, Abernathy, CR, Pearton, SJ, Gotthold, D, Birkhahn, R, Peres, B, Fitch, RC, Moser, N, Gillespie, JK, Jenkins, T, Sewell, J, Via, D & Crespo, A 2003, 'High three-terminal breakdown voltage and output power of Sc2O3 passivated AlGaN/GaN high electron mobility transistors', Electronics Letters, vol. 39, no. 10, pp. 809-810. https://doi.org/10.1049/el:20030525
Luo, B. ; Mehandru, R. ; Kim, Ji Hyun ; Ren, F. ; Gila, B. P. ; Onstine, A. H. ; Abernathy, C. R. ; Pearton, S. J. ; Gotthold, D. ; Birkhahn, R. ; Peres, B. ; Fitch, R. C. ; Moser, N. ; Gillespie, J. K. ; Jenkins, T. ; Sewell, J. ; Via, D. ; Crespo, A. / High three-terminal breakdown voltage and output power of Sc2O3 passivated AlGaN/GaN high electron mobility transistors. In: Electronics Letters. 2003 ; Vol. 39, No. 10. pp. 809-810.
@article{00f9fb5483e2435d951c7dbaccc1fb7e,
title = "High three-terminal breakdown voltage and output power of Sc2O3 passivated AlGaN/GaN high electron mobility transistors",
abstract = "MBE-deposited Sc2O3 films are found to effectively passivate surface states in the gate-drain region of AlGaN/GaN HEMTs. The effect of the passivation is observed in higher forward IDS-VDS three-terminal breakdown voltage and output power under class A operation. In the latter case, the power-added efficiency was at least doubled.",
author = "B. Luo and R. Mehandru and Kim, {Ji Hyun} and F. Ren and Gila, {B. P.} and Onstine, {A. H.} and Abernathy, {C. R.} and Pearton, {S. J.} and D. Gotthold and R. Birkhahn and B. Peres and Fitch, {R. C.} and N. Moser and Gillespie, {J. K.} and T. Jenkins and J. Sewell and D. Via and A. Crespo",
year = "2003",
month = "5",
day = "15",
doi = "10.1049/el:20030525",
language = "English",
volume = "39",
pages = "809--810",
journal = "Electronics Letters",
issn = "0013-5194",
publisher = "Institution of Engineering and Technology",
number = "10",

}

TY - JOUR

T1 - High three-terminal breakdown voltage and output power of Sc2O3 passivated AlGaN/GaN high electron mobility transistors

AU - Luo, B.

AU - Mehandru, R.

AU - Kim, Ji Hyun

AU - Ren, F.

AU - Gila, B. P.

AU - Onstine, A. H.

AU - Abernathy, C. R.

AU - Pearton, S. J.

AU - Gotthold, D.

AU - Birkhahn, R.

AU - Peres, B.

AU - Fitch, R. C.

AU - Moser, N.

AU - Gillespie, J. K.

AU - Jenkins, T.

AU - Sewell, J.

AU - Via, D.

AU - Crespo, A.

PY - 2003/5/15

Y1 - 2003/5/15

N2 - MBE-deposited Sc2O3 films are found to effectively passivate surface states in the gate-drain region of AlGaN/GaN HEMTs. The effect of the passivation is observed in higher forward IDS-VDS three-terminal breakdown voltage and output power under class A operation. In the latter case, the power-added efficiency was at least doubled.

AB - MBE-deposited Sc2O3 films are found to effectively passivate surface states in the gate-drain region of AlGaN/GaN HEMTs. The effect of the passivation is observed in higher forward IDS-VDS three-terminal breakdown voltage and output power under class A operation. In the latter case, the power-added efficiency was at least doubled.

UR - http://www.scopus.com/inward/record.url?scp=0038010742&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0038010742&partnerID=8YFLogxK

U2 - 10.1049/el:20030525

DO - 10.1049/el:20030525

M3 - Article

AN - SCOPUS:0038010742

VL - 39

SP - 809

EP - 810

JO - Electronics Letters

JF - Electronics Letters

SN - 0013-5194

IS - 10

ER -