High-transmittance NiSc/Ag/ITO p-type ohmic electrode for near-UV GaN-based light-emitting diodes

Hyun Gi Hong, Hyunseok Na, Tae Yeon Seong, Takhee Lee, June O. Song, Kyung Kook Kim

Research output: Contribution to journalArticle

5 Citations (Scopus)

Abstract

We report on the formation of NiSc(2.5 nm)/Ag(2.5 nm)/ITO(200 nm) transparent p-type Ohmic electrodes for GaN-based near-UV light-emitting diodes (LEDs). We show that the NiSc(2.5 nm)/Ag(2.5 nm)/ITO(200 nm) contacts become Ohmic with contact resistivity of 4.9 × 10 -3 Ωcm 2 and a transmittance of 80 % at 400 nm when annealed at 630 °C for 1 min in air. Near-UV (400 nm) LEDs fabricated with the annealed NiSc/Ag/ITO p-contacts give a forward-bias voltage of 3.69 V at 20 mA and a series resistance of 21.1 Ω, which are better than those for Ni/Au contacts. Based on Auger electron spectroscopy and electrical results, possible Ohmic formation mechanisms are described.

Original languageEnglish
Pages (from-to)159-162
Number of pages4
JournalJournal of the Korean Physical Society
Volume51
Issue number1
Publication statusPublished - 2007 Jul 1

Fingerprint

ITO (semiconductors)
transmittance
light emitting diodes
electrodes
electric contacts
Auger spectroscopy
electron spectroscopy
electrical resistivity
air
electric potential

Keywords

  • Contact resistivity
  • LED
  • p-type Ohmic contact
  • Transmittance

ASJC Scopus subject areas

  • Physics and Astronomy(all)

Cite this

High-transmittance NiSc/Ag/ITO p-type ohmic electrode for near-UV GaN-based light-emitting diodes. / Hong, Hyun Gi; Na, Hyunseok; Seong, Tae Yeon; Lee, Takhee; Song, June O.; Kim, Kyung Kook.

In: Journal of the Korean Physical Society, Vol. 51, No. 1, 01.07.2007, p. 159-162.

Research output: Contribution to journalArticle

Hong, Hyun Gi ; Na, Hyunseok ; Seong, Tae Yeon ; Lee, Takhee ; Song, June O. ; Kim, Kyung Kook. / High-transmittance NiSc/Ag/ITO p-type ohmic electrode for near-UV GaN-based light-emitting diodes. In: Journal of the Korean Physical Society. 2007 ; Vol. 51, No. 1. pp. 159-162.
@article{eb7b74338f9a497cbbe651267a86b867,
title = "High-transmittance NiSc/Ag/ITO p-type ohmic electrode for near-UV GaN-based light-emitting diodes",
abstract = "We report on the formation of NiSc(2.5 nm)/Ag(2.5 nm)/ITO(200 nm) transparent p-type Ohmic electrodes for GaN-based near-UV light-emitting diodes (LEDs). We show that the NiSc(2.5 nm)/Ag(2.5 nm)/ITO(200 nm) contacts become Ohmic with contact resistivity of 4.9 × 10 -3 Ωcm 2 and a transmittance of 80 {\%} at 400 nm when annealed at 630 °C for 1 min in air. Near-UV (400 nm) LEDs fabricated with the annealed NiSc/Ag/ITO p-contacts give a forward-bias voltage of 3.69 V at 20 mA and a series resistance of 21.1 Ω, which are better than those for Ni/Au contacts. Based on Auger electron spectroscopy and electrical results, possible Ohmic formation mechanisms are described.",
keywords = "Contact resistivity, LED, p-type Ohmic contact, Transmittance",
author = "Hong, {Hyun Gi} and Hyunseok Na and Seong, {Tae Yeon} and Takhee Lee and Song, {June O.} and Kim, {Kyung Kook}",
year = "2007",
month = "7",
day = "1",
language = "English",
volume = "51",
pages = "159--162",
journal = "Journal of the Korean Physical Society",
issn = "0374-4884",
publisher = "Korean Physical Society",
number = "1",

}

TY - JOUR

T1 - High-transmittance NiSc/Ag/ITO p-type ohmic electrode for near-UV GaN-based light-emitting diodes

AU - Hong, Hyun Gi

AU - Na, Hyunseok

AU - Seong, Tae Yeon

AU - Lee, Takhee

AU - Song, June O.

AU - Kim, Kyung Kook

PY - 2007/7/1

Y1 - 2007/7/1

N2 - We report on the formation of NiSc(2.5 nm)/Ag(2.5 nm)/ITO(200 nm) transparent p-type Ohmic electrodes for GaN-based near-UV light-emitting diodes (LEDs). We show that the NiSc(2.5 nm)/Ag(2.5 nm)/ITO(200 nm) contacts become Ohmic with contact resistivity of 4.9 × 10 -3 Ωcm 2 and a transmittance of 80 % at 400 nm when annealed at 630 °C for 1 min in air. Near-UV (400 nm) LEDs fabricated with the annealed NiSc/Ag/ITO p-contacts give a forward-bias voltage of 3.69 V at 20 mA and a series resistance of 21.1 Ω, which are better than those for Ni/Au contacts. Based on Auger electron spectroscopy and electrical results, possible Ohmic formation mechanisms are described.

AB - We report on the formation of NiSc(2.5 nm)/Ag(2.5 nm)/ITO(200 nm) transparent p-type Ohmic electrodes for GaN-based near-UV light-emitting diodes (LEDs). We show that the NiSc(2.5 nm)/Ag(2.5 nm)/ITO(200 nm) contacts become Ohmic with contact resistivity of 4.9 × 10 -3 Ωcm 2 and a transmittance of 80 % at 400 nm when annealed at 630 °C for 1 min in air. Near-UV (400 nm) LEDs fabricated with the annealed NiSc/Ag/ITO p-contacts give a forward-bias voltage of 3.69 V at 20 mA and a series resistance of 21.1 Ω, which are better than those for Ni/Au contacts. Based on Auger electron spectroscopy and electrical results, possible Ohmic formation mechanisms are described.

KW - Contact resistivity

KW - LED

KW - p-type Ohmic contact

KW - Transmittance

UR - http://www.scopus.com/inward/record.url?scp=34547700429&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=34547700429&partnerID=8YFLogxK

M3 - Article

VL - 51

SP - 159

EP - 162

JO - Journal of the Korean Physical Society

JF - Journal of the Korean Physical Society

SN - 0374-4884

IS - 1

ER -