High transparency of AgZn-Ni solid-solution ohmic contacts for GaN-based ultraviolet light-emitting diodes

Dong Seok Leem, June O. Song, Woong Ki Hong, Jeong Tae Maeng, J. S. Kwak, Y. Park, Tae Yeon Seong

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

AgZn-Ni solid-solution scheme has been investigated to produce transparent ohmic contacts for ultraviolet (UV) light-emitting diodes (LEDs). The AgZn-Ni solid-solution contacts annealed at 430 °C for 1 min in air show high transmittance of 67%-69% at 340 nm, which is much better than that (53%) of the conventional NiAu contact. The annealed contacts give specific contact resistance of 8.2× 10-5 and 4.8× 10-5 Ω cm2. Further, near UV LEDs (300×300 μ m2) made with the annealed contact layers produce a forward-bias voltage of 3.32-3.46 V at 20 mA. Possible explanations are given to describe the annealing-induced improvement of the ohmic behaviors of the AgZn-Ni solid-solution contacts.

Original languageEnglish
Article number102102
Pages (from-to)1-3
Number of pages3
JournalApplied Physics Letters
Volume86
Issue number10
DOIs
Publication statusPublished - 2005 Mar 7

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Fingerprint Dive into the research topics of 'High transparency of AgZn-Ni solid-solution ohmic contacts for GaN-based ultraviolet light-emitting diodes'. Together they form a unique fingerprint.

  • Cite this