High-voltage Schottky barrier diode on silicon substrate

Min Woo Ha, Cheong Hyun Roh, Dae Won Hwang, Hong Goo Choi, Hong Joo Song, Jun Ho Lee, Jung Ho Park, Ogyun Seok, Jiyong Lim, Min Koo Han, Cheol Koo Hahn

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10 Citations (Scopus)

Abstract

New GaN Schottky barrier diodes (SBDs) on Si substrates are proposed to achieve a high-breakdown voltage. We have fabricated GaN SBDs using doped GaN/unintentionally doped (UID) GaN because doped GaN with the thickness of 200 nm is suitable for high-current operation. The 1-μm-deep mesa and low-temperature annealing of ohmic contacts suppress the leakage current of GaN SBDs. Annealing of Schottky contacts also improves the interface between a Schottky contact and GaN. Annealing of ohmic contacts at 670 °C yields the low leakage current of 2.8 nA through the surface and the buffer. When the anode-cathode distance is 5μm, the fabricated GaN SBD successfully achieves a low forward voltage drop of 1.3V at 100A/cm2, low on-resistance of 4.00mΩcm2, and the low leakage current of 0.6A/cm2 at-100V. The measured breakdown voltage of GaN SBDs is approximately 400 V.

Original languageEnglish
Article number06GF17
JournalJapanese journal of applied physics
Volume50
Issue number6 PART 2
DOIs
Publication statusPublished - 2011 Jun

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

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    Ha, M. W., Roh, C. H., Hwang, D. W., Choi, H. G., Song, H. J., Lee, J. H., Park, J. H., Seok, O., Lim, J., Han, M. K., & Hahn, C. K. (2011). High-voltage Schottky barrier diode on silicon substrate. Japanese journal of applied physics, 50(6 PART 2), [06GF17]. https://doi.org/10.1143/JJAP.50.06GF17