High yield production of semiconducting p-type single-walled carbon nanotube thin-film transistors on a flexible polyimide substrate by tuning the density of ferritin catalysts

Jaehyun Park; Jangyeol Yoon; Seong Jun Kang; Gyu Tae Kim; Jeong Sook Ha

doi:10.1016/j.carbon.2011.02.019

High yield production of semiconducting p-type single-walled carbon nanotube thin-film transistors on a flexible polyimide substrate by tuning the density of ferritin catalysts

Jaehyun Park, Jangyeol Yoon, Seong Jun Kang, Gyu Tae Kim, Jeong Sook Ha

Research output: Contribution to journal › Article › peer-review

12 Citations (Scopus)

Abstract

We report on a simple method for fabricating pure p-type single-walled carbon nanotube (SWCNT) thin-film transistors (TFTs) on flexible polyimide substrates without selective removal of metallic SWCNTs from the as-grown CNT films. The density of the SWCNTs was controlled by tuning the concentration of ferritin catalyst, resulting in the control of the metallic percolation pathways in the SWCNT TFTs. For a ferritin solution diluted by 1/2000, approximately 60% of the pristine SWCNT TFTs showed p-type behavior with larger on/off current ratios, (I_on/I_off > 10⁴) and a high photosensitivity to the exposure of UV/visible light.

Original language	English
Pages (from-to)	2492-2498
Number of pages	7
Journal	Carbon
Volume	49
Issue number	7
DOIs	https://doi.org/10.1016/j.carbon.2011.02.019
Publication status	Published - 2011 Jun

ASJC Scopus subject areas

Chemistry(all)
Materials Science(all)

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title = "High yield production of semiconducting p-type single-walled carbon nanotube thin-film transistors on a flexible polyimide substrate by tuning the density of ferritin catalysts",

abstract = "We report on a simple method for fabricating pure p-type single-walled carbon nanotube (SWCNT) thin-film transistors (TFTs) on flexible polyimide substrates without selective removal of metallic SWCNTs from the as-grown CNT films. The density of the SWCNTs was controlled by tuning the concentration of ferritin catalyst, resulting in the control of the metallic percolation pathways in the SWCNT TFTs. For a ferritin solution diluted by 1/2000, approximately 60% of the pristine SWCNT TFTs showed p-type behavior with larger on/off current ratios, (Ion/Ioff > 104) and a high photosensitivity to the exposure of UV/visible light.",

author = "Jaehyun Park and Jangyeol Yoon and Kang, {Seong Jun} and Kim, {Gyu Tae} and Ha, {Jeong Sook}",

note = "Funding Information: This work was supported by the National Research Foundation (NRF) through the Mid-Career Researcher Program (No. ROA-2010-0010374 and No. ROA-2007-0056879 , NRF) and Future-based Technology Development Program (No. ROA-2005-2002369 , and No. ROA-2009-0083380 , NRF) funded by the Ministry of Education, Science and Technology, Korea. ",

year = "2011",

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doi = "10.1016/j.carbon.2011.02.019",

language = "English",

volume = "49",

pages = "2492--2498",

journal = "Carbon",

issn = "0008-6223",

publisher = "Elsevier Limited",

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T1 - High yield production of semiconducting p-type single-walled carbon nanotube thin-film transistors on a flexible polyimide substrate by tuning the density of ferritin catalysts

AU - Park, Jaehyun

AU - Yoon, Jangyeol

AU - Kang, Seong Jun

AU - Kim, Gyu Tae

AU - Ha, Jeong Sook

N1 - Funding Information: This work was supported by the National Research Foundation (NRF) through the Mid-Career Researcher Program (No. ROA-2010-0010374 and No. ROA-2007-0056879 , NRF) and Future-based Technology Development Program (No. ROA-2005-2002369 , and No. ROA-2009-0083380 , NRF) funded by the Ministry of Education, Science and Technology, Korea.

PY - 2011/6

Y1 - 2011/6

N2 - We report on a simple method for fabricating pure p-type single-walled carbon nanotube (SWCNT) thin-film transistors (TFTs) on flexible polyimide substrates without selective removal of metallic SWCNTs from the as-grown CNT films. The density of the SWCNTs was controlled by tuning the concentration of ferritin catalyst, resulting in the control of the metallic percolation pathways in the SWCNT TFTs. For a ferritin solution diluted by 1/2000, approximately 60% of the pristine SWCNT TFTs showed p-type behavior with larger on/off current ratios, (Ion/Ioff > 104) and a high photosensitivity to the exposure of UV/visible light.

AB - We report on a simple method for fabricating pure p-type single-walled carbon nanotube (SWCNT) thin-film transistors (TFTs) on flexible polyimide substrates without selective removal of metallic SWCNTs from the as-grown CNT films. The density of the SWCNTs was controlled by tuning the concentration of ferritin catalyst, resulting in the control of the metallic percolation pathways in the SWCNT TFTs. For a ferritin solution diluted by 1/2000, approximately 60% of the pristine SWCNT TFTs showed p-type behavior with larger on/off current ratios, (Ion/Ioff > 104) and a high photosensitivity to the exposure of UV/visible light.

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DO - 10.1016/j.carbon.2011.02.019

M3 - Article

AN - SCOPUS:79952991967

SN - 0008-6223

VL - 49

SP - 2492

EP - 2498

JO - Carbon

JF - Carbon

IS - 7

ER -

High yield production of semiconducting p-type single-walled carbon nanotube thin-film transistors on a flexible polyimide substrate by tuning the density of ferritin catalysts

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