Higher Quantum State Transitions in Colloidal Quantum Dot with Heavy Electron Doping

Bitna Yoon, Juyeon Jeong, Kwang Seob Jeong

Research output: Contribution to journalArticle

16 Citations (Scopus)

Abstract

Electron occupation in the lowest quantized state of the conduction band (1Se) in the colloidal quantum dot leads to the intraband transition in steady-state (1Se-1Pe). The intraband transition, solely originating from the quantum confinement effect, is the unique property of semiconducting nanocrystals. To achieve the electron occupation in 1Se state in the absence of impurity ions, nonthiol ligand passivated HgS colloidal quantum dots are synthesized. The nonthiol ligand passivated HgS quantum dot exhibits strong steady-state intraband transition in ambient condition and enables a versatile ligand replacement to oxide, acid, and halide functional ligands, which was not achievable from conventional HgS or HgSe quantum dots. Surprisingly, the atomic ligand passivation to HgS colloidal quantum dot solution efficiently maintains the electron occupation at 1Se of HgS CQDs in ambient condition. The electron occupation in 1Se of HgS CQD solid film is controlled by surface treatment with charged ions, which is confirmed by the mid-IR intraband absorption (1Se-1Pe) intensity imaged by the FTIR microscope. Furthermore, a novel second intraband transition (1Pe-1De) is observed from the HgS CQD solid. The observation of the second intraband transition (1Pe-De) allows us to utilize the higher quantized states that were hidden for the last three decades. The use of the intraband transition with narrow bandwidth in mid-IR would enable to choose an optimal electronic transition occurring in the nanocrystal for a number of applications: wavelength-selective low-energy consuming electronics, space-communication light source, mid-infrared energy sensitized electrode and catalyst, infrared photodetector, and infrared filter.

Original languageEnglish
Pages (from-to)22062-22068
Number of pages7
JournalJournal of Physical Chemistry C
Volume120
Issue number38
DOIs
Publication statusPublished - 2016 Sep 29

Fingerprint

Electron transitions
Semiconductor quantum dots
Ligands
quantum dots
Doping (additives)
Electrons
occupation
ligands
Infrared radiation
electrons
Nanocrystals
Ions
Quantum confinement
nanocrystals
infrared filters
Photodetectors
Conduction bands
Passivation
space communication
Oxides

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Energy(all)
  • Surfaces, Coatings and Films
  • Physical and Theoretical Chemistry

Cite this

Higher Quantum State Transitions in Colloidal Quantum Dot with Heavy Electron Doping. / Yoon, Bitna; Jeong, Juyeon; Jeong, Kwang Seob.

In: Journal of Physical Chemistry C, Vol. 120, No. 38, 29.09.2016, p. 22062-22068.

Research output: Contribution to journalArticle

@article{c1105b13bd0c4a47a44df91efd548dd4,
title = "Higher Quantum State Transitions in Colloidal Quantum Dot with Heavy Electron Doping",
abstract = "Electron occupation in the lowest quantized state of the conduction band (1Se) in the colloidal quantum dot leads to the intraband transition in steady-state (1Se-1Pe). The intraband transition, solely originating from the quantum confinement effect, is the unique property of semiconducting nanocrystals. To achieve the electron occupation in 1Se state in the absence of impurity ions, nonthiol ligand passivated HgS colloidal quantum dots are synthesized. The nonthiol ligand passivated HgS quantum dot exhibits strong steady-state intraband transition in ambient condition and enables a versatile ligand replacement to oxide, acid, and halide functional ligands, which was not achievable from conventional HgS or HgSe quantum dots. Surprisingly, the atomic ligand passivation to HgS colloidal quantum dot solution efficiently maintains the electron occupation at 1Se of HgS CQDs in ambient condition. The electron occupation in 1Se of HgS CQD solid film is controlled by surface treatment with charged ions, which is confirmed by the mid-IR intraband absorption (1Se-1Pe) intensity imaged by the FTIR microscope. Furthermore, a novel second intraband transition (1Pe-1De) is observed from the HgS CQD solid. The observation of the second intraband transition (1Pe-De) allows us to utilize the higher quantized states that were hidden for the last three decades. The use of the intraband transition with narrow bandwidth in mid-IR would enable to choose an optimal electronic transition occurring in the nanocrystal for a number of applications: wavelength-selective low-energy consuming electronics, space-communication light source, mid-infrared energy sensitized electrode and catalyst, infrared photodetector, and infrared filter.",
author = "Bitna Yoon and Juyeon Jeong and Jeong, {Kwang Seob}",
year = "2016",
month = "9",
day = "29",
doi = "10.1021/acs.jpcc.6b07331",
language = "English",
volume = "120",
pages = "22062--22068",
journal = "Journal of Physical Chemistry C",
issn = "1932-7447",
publisher = "American Chemical Society",
number = "38",

}

TY - JOUR

T1 - Higher Quantum State Transitions in Colloidal Quantum Dot with Heavy Electron Doping

AU - Yoon, Bitna

AU - Jeong, Juyeon

AU - Jeong, Kwang Seob

PY - 2016/9/29

Y1 - 2016/9/29

N2 - Electron occupation in the lowest quantized state of the conduction band (1Se) in the colloidal quantum dot leads to the intraband transition in steady-state (1Se-1Pe). The intraband transition, solely originating from the quantum confinement effect, is the unique property of semiconducting nanocrystals. To achieve the electron occupation in 1Se state in the absence of impurity ions, nonthiol ligand passivated HgS colloidal quantum dots are synthesized. The nonthiol ligand passivated HgS quantum dot exhibits strong steady-state intraband transition in ambient condition and enables a versatile ligand replacement to oxide, acid, and halide functional ligands, which was not achievable from conventional HgS or HgSe quantum dots. Surprisingly, the atomic ligand passivation to HgS colloidal quantum dot solution efficiently maintains the electron occupation at 1Se of HgS CQDs in ambient condition. The electron occupation in 1Se of HgS CQD solid film is controlled by surface treatment with charged ions, which is confirmed by the mid-IR intraband absorption (1Se-1Pe) intensity imaged by the FTIR microscope. Furthermore, a novel second intraband transition (1Pe-1De) is observed from the HgS CQD solid. The observation of the second intraband transition (1Pe-De) allows us to utilize the higher quantized states that were hidden for the last three decades. The use of the intraband transition with narrow bandwidth in mid-IR would enable to choose an optimal electronic transition occurring in the nanocrystal for a number of applications: wavelength-selective low-energy consuming electronics, space-communication light source, mid-infrared energy sensitized electrode and catalyst, infrared photodetector, and infrared filter.

AB - Electron occupation in the lowest quantized state of the conduction band (1Se) in the colloidal quantum dot leads to the intraband transition in steady-state (1Se-1Pe). The intraband transition, solely originating from the quantum confinement effect, is the unique property of semiconducting nanocrystals. To achieve the electron occupation in 1Se state in the absence of impurity ions, nonthiol ligand passivated HgS colloidal quantum dots are synthesized. The nonthiol ligand passivated HgS quantum dot exhibits strong steady-state intraband transition in ambient condition and enables a versatile ligand replacement to oxide, acid, and halide functional ligands, which was not achievable from conventional HgS or HgSe quantum dots. Surprisingly, the atomic ligand passivation to HgS colloidal quantum dot solution efficiently maintains the electron occupation at 1Se of HgS CQDs in ambient condition. The electron occupation in 1Se of HgS CQD solid film is controlled by surface treatment with charged ions, which is confirmed by the mid-IR intraband absorption (1Se-1Pe) intensity imaged by the FTIR microscope. Furthermore, a novel second intraband transition (1Pe-1De) is observed from the HgS CQD solid. The observation of the second intraband transition (1Pe-De) allows us to utilize the higher quantized states that were hidden for the last three decades. The use of the intraband transition with narrow bandwidth in mid-IR would enable to choose an optimal electronic transition occurring in the nanocrystal for a number of applications: wavelength-selective low-energy consuming electronics, space-communication light source, mid-infrared energy sensitized electrode and catalyst, infrared photodetector, and infrared filter.

UR - http://www.scopus.com/inward/record.url?scp=84989878200&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84989878200&partnerID=8YFLogxK

U2 - 10.1021/acs.jpcc.6b07331

DO - 10.1021/acs.jpcc.6b07331

M3 - Article

AN - SCOPUS:84989878200

VL - 120

SP - 22062

EP - 22068

JO - Journal of Physical Chemistry C

JF - Journal of Physical Chemistry C

SN - 1932-7447

IS - 38

ER -