Higherature Annealing of CdZnTe Detectors

J. Suh, S. Hwang, H. Yu, Y. Yoon, Aleksey E. Bolotnikov, Ralph B. James, J. Hong, Kihyun Kim

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

The electrical properties of CdZnTe(CZT) above the melting point of tellurium (Te) inclusions were determined during in situ annealing. The thermal annealing cycles of the CZT detectors were 490 °C, 530 °C, and 570 °C continuously, which were higher than the melting points of elemental Te and Te inclusions and lower than the sublimation temperature of CZT. Unexpectedly, the CZT detectors exhibited very low leakage current at room temperature after the thermal annealing cycles due to the formation of rectifying contacts. The activation energy of high-resistivity CZT was 0.81 eV indicating pinning of Fermi level nearly in the middle of bandgap. At room temperature, CZT detectors with rectifying contacts showed clearly the 59.5-keV gamma-ray peak of Am-241. Observed fluctuations of the leakage current at about 470 °C might have originated from a mixed conductivity of liquid and solid CZT due to the melting of Te inclusions.

Original languageEnglish
Article number8103821
Pages (from-to)2966-2969
Number of pages4
JournalIEEE Transactions on Nuclear Science
Volume64
Issue number12
DOIs
Publication statusPublished - 2017 Dec 1

Fingerprint

Tellurium
tellurium
Annealing
Detectors
annealing
detectors
inclusions
Leakage currents
melting points
Melting point
leakage
cycles
Sublimation
room temperature
Fermi level
sublimation
Gamma rays
Temperature
Melting
Electric properties

Keywords

  • CdZnTe (CZT)
  • CZT detectors
  • in situ annealing
  • pulse-height analyzers
  • Schottky barrier
  • Te inclusions

ASJC Scopus subject areas

  • Nuclear and High Energy Physics
  • Nuclear Energy and Engineering
  • Electrical and Electronic Engineering

Cite this

Suh, J., Hwang, S., Yu, H., Yoon, Y., Bolotnikov, A. E., James, R. B., ... Kim, K. (2017). Higherature Annealing of CdZnTe Detectors. IEEE Transactions on Nuclear Science, 64(12), 2966-2969. [8103821]. https://doi.org/10.1109/TNS.2017.2771378

Higherature Annealing of CdZnTe Detectors. / Suh, J.; Hwang, S.; Yu, H.; Yoon, Y.; Bolotnikov, Aleksey E.; James, Ralph B.; Hong, J.; Kim, Kihyun.

In: IEEE Transactions on Nuclear Science, Vol. 64, No. 12, 8103821, 01.12.2017, p. 2966-2969.

Research output: Contribution to journalArticle

Suh, J, Hwang, S, Yu, H, Yoon, Y, Bolotnikov, AE, James, RB, Hong, J & Kim, K 2017, 'Higherature Annealing of CdZnTe Detectors', IEEE Transactions on Nuclear Science, vol. 64, no. 12, 8103821, pp. 2966-2969. https://doi.org/10.1109/TNS.2017.2771378
Suh J, Hwang S, Yu H, Yoon Y, Bolotnikov AE, James RB et al. Higherature Annealing of CdZnTe Detectors. IEEE Transactions on Nuclear Science. 2017 Dec 1;64(12):2966-2969. 8103821. https://doi.org/10.1109/TNS.2017.2771378
Suh, J. ; Hwang, S. ; Yu, H. ; Yoon, Y. ; Bolotnikov, Aleksey E. ; James, Ralph B. ; Hong, J. ; Kim, Kihyun. / Higherature Annealing of CdZnTe Detectors. In: IEEE Transactions on Nuclear Science. 2017 ; Vol. 64, No. 12. pp. 2966-2969.
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