Highly Bendable In-Ga-ZnO Thin Film Transistors by Using a Thermally Stable Organic Dielectric Layer

Yogeenth Kumaresan, Yusin Pak, Namsoo Lim, Yonghun Kim, Min Ji Park, Sung Min Yoon, Hyoc Min Youn, Heon Lee, Byoung Hun Lee, Gun Young Jung

Research output: Contribution to journalArticle

14 Citations (Scopus)

Abstract

Flexible In-Ga-ZnO (IGZO) thin film transistor (TFT) on a polyimide substrate is produced by employing a thermally stable SA7 organic material as the multi-functional barrier and dielectric layers. The IGZO channel layer was sputtered at Ar:O2 gas flow rate of 100:1 sccm and the fabricated TFT exhibited excellent transistor performances with a mobility of 15.67 cm2/Vs, a threshold voltage of 6.4 V and an on/off current ratio of 4.5 × 105. Further, high mechanical stability was achieved by the use of organic/inorganic stacking of dielectric and channel layers. Thus, the IGZO transistor endured unprecedented bending strain up to 3.33% at a bending radius of 1.5 mm with no significant degradation in transistor performances along with a superior reliability up to 1000 cycles.

Original languageEnglish
Article number37764
JournalScientific Reports
Volume6
DOIs
Publication statusPublished - 2016 Nov 23

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transistors
thin films
barrier layers
organic materials
polyimides
threshold voltage
gas flow
flow velocity
degradation
cycles
radii

ASJC Scopus subject areas

  • General

Cite this

Kumaresan, Y., Pak, Y., Lim, N., Kim, Y., Park, M. J., Yoon, S. M., ... Jung, G. Y. (2016). Highly Bendable In-Ga-ZnO Thin Film Transistors by Using a Thermally Stable Organic Dielectric Layer. Scientific Reports, 6, [37764]. https://doi.org/10.1038/srep37764

Highly Bendable In-Ga-ZnO Thin Film Transistors by Using a Thermally Stable Organic Dielectric Layer. / Kumaresan, Yogeenth; Pak, Yusin; Lim, Namsoo; Kim, Yonghun; Park, Min Ji; Yoon, Sung Min; Youn, Hyoc Min; Lee, Heon; Lee, Byoung Hun; Jung, Gun Young.

In: Scientific Reports, Vol. 6, 37764, 23.11.2016.

Research output: Contribution to journalArticle

Kumaresan, Y, Pak, Y, Lim, N, Kim, Y, Park, MJ, Yoon, SM, Youn, HM, Lee, H, Lee, BH & Jung, GY 2016, 'Highly Bendable In-Ga-ZnO Thin Film Transistors by Using a Thermally Stable Organic Dielectric Layer', Scientific Reports, vol. 6, 37764. https://doi.org/10.1038/srep37764
Kumaresan, Yogeenth ; Pak, Yusin ; Lim, Namsoo ; Kim, Yonghun ; Park, Min Ji ; Yoon, Sung Min ; Youn, Hyoc Min ; Lee, Heon ; Lee, Byoung Hun ; Jung, Gun Young. / Highly Bendable In-Ga-ZnO Thin Film Transistors by Using a Thermally Stable Organic Dielectric Layer. In: Scientific Reports. 2016 ; Vol. 6.
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