Highly Bendable In-Ga-ZnO Thin Film Transistors by Using a Thermally Stable Organic Dielectric Layer

Yogeenth Kumaresan, Yusin Pak, Namsoo Lim, Yonghun Kim, Min Ji Park, Sung Min Yoon, Hyoc Min Youn, Heon Lee, Byoung Hun Lee, Gun Young Jung

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Abstract

Flexible In-Ga-ZnO (IGZO) thin film transistor (TFT) on a polyimide substrate is produced by employing a thermally stable SA7 organic material as the multi-functional barrier and dielectric layers. The IGZO channel layer was sputtered at Ar:O2 gas flow rate of 100:1 sccm and the fabricated TFT exhibited excellent transistor performances with a mobility of 15.67 cm2/Vs, a threshold voltage of 6.4 V and an on/off current ratio of 4.5 × 105. Further, high mechanical stability was achieved by the use of organic/inorganic stacking of dielectric and channel layers. Thus, the IGZO transistor endured unprecedented bending strain up to 3.33% at a bending radius of 1.5 mm with no significant degradation in transistor performances along with a superior reliability up to 1000 cycles.

Original languageEnglish
Article number37764
JournalScientific Reports
Volume6
DOIs
Publication statusPublished - 2016 Nov 23

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Cite this

Kumaresan, Y., Pak, Y., Lim, N., Kim, Y., Park, M. J., Yoon, S. M., ... Jung, G. Y. (2016). Highly Bendable In-Ga-ZnO Thin Film Transistors by Using a Thermally Stable Organic Dielectric Layer. Scientific Reports, 6, [37764]. https://doi.org/10.1038/srep37764