We employed AuCl 3 -doped graphene as a p-type transparent conducting electrode (TCE) in an p-i-n type CH 3 NH 3 PbI 3 perovskite solar cell using poly (3,4-ethylenedioxythiophene):poly(styrene sulfonate) and phenyl-C61-butyric acid methyl ester as the hole and electron transporting layers, respectively, and obtained 17.4–17.9% power conversion efficiency at 1 Sun condition. The work function of the AuCl 3 -doped graphene TCE was controllable from ∼4.52 to ∼4.86 eV. Due to the p-type doping by the AuCl 3 treatment, the graphene TCE shows good hole mobility and greatly-improved sheet resistance (∼70 ohm/cm 2 ) compared to the pristine graphene TCE (∼890 ohm/cm 2 ) but its transmittance was gradually decreased with the doping concentration (n D ). Owing to the trade-off correlation between the sheet resistance and the transmittance of the AuCl 3 -doped graphene TCE, the ratio of DC conductivity and optical conductivity was the highest at n D = 7.5 mM. Therefore, the highest performance was achievable by using 7.5 mM AuCl 3 -doped graphene TCE.
- p-Type doping
- Perovskite solar cells
- Transparent conducting electrode
ASJC Scopus subject areas
- Environmental Chemistry
- Chemical Engineering(all)
- Industrial and Manufacturing Engineering