Highly Efficient Deep-UV Light-Emitting Diodes Using AlN-Based Deep-UV-Transparent Glass Electrodes

Tae Ho Lee, Byeong Ryong Lee, Kyung Rock Son, Hee Woong Shin, Tae Geun Kim

Research output: Contribution to journalArticle

8 Citations (Scopus)

Abstract

Many studies have set out to develop electrodes that are both highly conductive and transparent across a wide spectral region, from visible to deep UV (DUV). However, few solutions have been proposed because these two properties are mutually exclusive. In this paper, an AlN-based glass electrode film with a conducting filament formed by the application of an ac pulse is proposed as a solution, which exhibits a high transmittance in the DUV region (over 95.6% at 280 nm) and a low contact resistance with a p-Al0.4Ga0.6N layer (ρc = 3.2 × 10-2 Ω·cm2). The Ohmic conduction mechanism at the interface between the AlN film and the p-Al0.4Ga0.6N layers is fully examined using various analytical tools. This AlN film is finally applied to a 280 nm top-emitting light-emitting diode, to verify the validity of the method, which exhibits very stable operations with a forward voltage of 7.7 V at 20 mA, a light output power of 7.49 mW at 100 mA, and, most importantly, a record high external quantum efficiency of 2.8% after packaging.

Original languageEnglish
Pages (from-to)43774-43781
Number of pages8
JournalACS Applied Materials and Interfaces
Volume9
Issue number50
DOIs
Publication statusPublished - 2017 Dec 20

Fingerprint

Diodes
Glass
Electrodes
Contact resistance
Quantum efficiency
Light emitting diodes
Packaging
Electric potential
Ultraviolet Rays

Keywords

  • deep-UV light-emitting diode
  • direct Ohmic contact
  • glass electrode
  • pulsed electrical breakdown
  • transparent conductive electrode

ASJC Scopus subject areas

  • Materials Science(all)

Cite this

Highly Efficient Deep-UV Light-Emitting Diodes Using AlN-Based Deep-UV-Transparent Glass Electrodes. / Lee, Tae Ho; Lee, Byeong Ryong; Son, Kyung Rock; Shin, Hee Woong; Kim, Tae Geun.

In: ACS Applied Materials and Interfaces, Vol. 9, No. 50, 20.12.2017, p. 43774-43781.

Research output: Contribution to journalArticle

Lee, Tae Ho ; Lee, Byeong Ryong ; Son, Kyung Rock ; Shin, Hee Woong ; Kim, Tae Geun. / Highly Efficient Deep-UV Light-Emitting Diodes Using AlN-Based Deep-UV-Transparent Glass Electrodes. In: ACS Applied Materials and Interfaces. 2017 ; Vol. 9, No. 50. pp. 43774-43781.
@article{d934c7461f794534854ed8294eb90732,
title = "Highly Efficient Deep-UV Light-Emitting Diodes Using AlN-Based Deep-UV-Transparent Glass Electrodes",
abstract = "Many studies have set out to develop electrodes that are both highly conductive and transparent across a wide spectral region, from visible to deep UV (DUV). However, few solutions have been proposed because these two properties are mutually exclusive. In this paper, an AlN-based glass electrode film with a conducting filament formed by the application of an ac pulse is proposed as a solution, which exhibits a high transmittance in the DUV region (over 95.6{\%} at 280 nm) and a low contact resistance with a p-Al0.4Ga0.6N layer (ρc = 3.2 × 10-2 Ω·cm2). The Ohmic conduction mechanism at the interface between the AlN film and the p-Al0.4Ga0.6N layers is fully examined using various analytical tools. This AlN film is finally applied to a 280 nm top-emitting light-emitting diode, to verify the validity of the method, which exhibits very stable operations with a forward voltage of 7.7 V at 20 mA, a light output power of 7.49 mW at 100 mA, and, most importantly, a record high external quantum efficiency of 2.8{\%} after packaging.",
keywords = "deep-UV light-emitting diode, direct Ohmic contact, glass electrode, pulsed electrical breakdown, transparent conductive electrode",
author = "Lee, {Tae Ho} and Lee, {Byeong Ryong} and Son, {Kyung Rock} and Shin, {Hee Woong} and Kim, {Tae Geun}",
year = "2017",
month = "12",
day = "20",
doi = "10.1021/acsami.7b13624",
language = "English",
volume = "9",
pages = "43774--43781",
journal = "ACS applied materials & interfaces",
issn = "1944-8244",
publisher = "American Chemical Society",
number = "50",

}

TY - JOUR

T1 - Highly Efficient Deep-UV Light-Emitting Diodes Using AlN-Based Deep-UV-Transparent Glass Electrodes

AU - Lee, Tae Ho

AU - Lee, Byeong Ryong

AU - Son, Kyung Rock

AU - Shin, Hee Woong

AU - Kim, Tae Geun

PY - 2017/12/20

Y1 - 2017/12/20

N2 - Many studies have set out to develop electrodes that are both highly conductive and transparent across a wide spectral region, from visible to deep UV (DUV). However, few solutions have been proposed because these two properties are mutually exclusive. In this paper, an AlN-based glass electrode film with a conducting filament formed by the application of an ac pulse is proposed as a solution, which exhibits a high transmittance in the DUV region (over 95.6% at 280 nm) and a low contact resistance with a p-Al0.4Ga0.6N layer (ρc = 3.2 × 10-2 Ω·cm2). The Ohmic conduction mechanism at the interface between the AlN film and the p-Al0.4Ga0.6N layers is fully examined using various analytical tools. This AlN film is finally applied to a 280 nm top-emitting light-emitting diode, to verify the validity of the method, which exhibits very stable operations with a forward voltage of 7.7 V at 20 mA, a light output power of 7.49 mW at 100 mA, and, most importantly, a record high external quantum efficiency of 2.8% after packaging.

AB - Many studies have set out to develop electrodes that are both highly conductive and transparent across a wide spectral region, from visible to deep UV (DUV). However, few solutions have been proposed because these two properties are mutually exclusive. In this paper, an AlN-based glass electrode film with a conducting filament formed by the application of an ac pulse is proposed as a solution, which exhibits a high transmittance in the DUV region (over 95.6% at 280 nm) and a low contact resistance with a p-Al0.4Ga0.6N layer (ρc = 3.2 × 10-2 Ω·cm2). The Ohmic conduction mechanism at the interface between the AlN film and the p-Al0.4Ga0.6N layers is fully examined using various analytical tools. This AlN film is finally applied to a 280 nm top-emitting light-emitting diode, to verify the validity of the method, which exhibits very stable operations with a forward voltage of 7.7 V at 20 mA, a light output power of 7.49 mW at 100 mA, and, most importantly, a record high external quantum efficiency of 2.8% after packaging.

KW - deep-UV light-emitting diode

KW - direct Ohmic contact

KW - glass electrode

KW - pulsed electrical breakdown

KW - transparent conductive electrode

UR - http://www.scopus.com/inward/record.url?scp=85038878997&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85038878997&partnerID=8YFLogxK

U2 - 10.1021/acsami.7b13624

DO - 10.1021/acsami.7b13624

M3 - Article

AN - SCOPUS:85038878997

VL - 9

SP - 43774

EP - 43781

JO - ACS applied materials & interfaces

JF - ACS applied materials & interfaces

SN - 1944-8244

IS - 50

ER -