TY - JOUR
T1 - Highly Efficient Deep-UV Light-Emitting Diodes Using AlN-Based Deep-UV-Transparent Glass Electrodes
AU - Lee, Tae Ho
AU - Lee, Byeong Ryong
AU - Son, Kyung Rock
AU - Shin, Hee Woong
AU - Kim, Tae Geun
N1 - Funding Information:
This work was supported by the National Research Foundation of Korea (NRF) Grant funded by the Korean government (no. 2016R1A3B1908249).
Publisher Copyright:
© 2017 American Chemical Society.
PY - 2017/12/20
Y1 - 2017/12/20
N2 - Many studies have set out to develop electrodes that are both highly conductive and transparent across a wide spectral region, from visible to deep UV (DUV). However, few solutions have been proposed because these two properties are mutually exclusive. In this paper, an AlN-based glass electrode film with a conducting filament formed by the application of an ac pulse is proposed as a solution, which exhibits a high transmittance in the DUV region (over 95.6% at 280 nm) and a low contact resistance with a p-Al0.4Ga0.6N layer (ρc = 3.2 × 10-2 Ω·cm2). The Ohmic conduction mechanism at the interface between the AlN film and the p-Al0.4Ga0.6N layers is fully examined using various analytical tools. This AlN film is finally applied to a 280 nm top-emitting light-emitting diode, to verify the validity of the method, which exhibits very stable operations with a forward voltage of 7.7 V at 20 mA, a light output power of 7.49 mW at 100 mA, and, most importantly, a record high external quantum efficiency of 2.8% after packaging.
AB - Many studies have set out to develop electrodes that are both highly conductive and transparent across a wide spectral region, from visible to deep UV (DUV). However, few solutions have been proposed because these two properties are mutually exclusive. In this paper, an AlN-based glass electrode film with a conducting filament formed by the application of an ac pulse is proposed as a solution, which exhibits a high transmittance in the DUV region (over 95.6% at 280 nm) and a low contact resistance with a p-Al0.4Ga0.6N layer (ρc = 3.2 × 10-2 Ω·cm2). The Ohmic conduction mechanism at the interface between the AlN film and the p-Al0.4Ga0.6N layers is fully examined using various analytical tools. This AlN film is finally applied to a 280 nm top-emitting light-emitting diode, to verify the validity of the method, which exhibits very stable operations with a forward voltage of 7.7 V at 20 mA, a light output power of 7.49 mW at 100 mA, and, most importantly, a record high external quantum efficiency of 2.8% after packaging.
KW - deep-UV light-emitting diode
KW - direct Ohmic contact
KW - glass electrode
KW - pulsed electrical breakdown
KW - transparent conductive electrode
UR - http://www.scopus.com/inward/record.url?scp=85038878997&partnerID=8YFLogxK
U2 - 10.1021/acsami.7b13624
DO - 10.1021/acsami.7b13624
M3 - Article
C2 - 29185344
AN - SCOPUS:85038878997
VL - 9
SP - 43774
EP - 43781
JO - ACS applied materials & interfaces
JF - ACS applied materials & interfaces
SN - 1944-8244
IS - 50
ER -