Highly efficient metal halide substituted CH3NH3I(PbI2)1−X(CuBr2)X planar perovskite solar cells

Muhammad Jahandar; Jin Hyuck Heo; Chang Eun Song; Ki Jeong Kong; Won Suk Shin; Jong Cheol Lee; Sang Hyuk Im; Sang Jin Moon

doi:10.1016/j.nanoen.2016.07.022

Highly efficient metal halide substituted CH₃NH₃I(PbI₂)_1−X(CuBr₂)_X planar perovskite solar cells

Muhammad Jahandar, Jin Hyuck Heo, Chang Eun Song, Ki Jeong Kong, Won Suk Shin, Jong Cheol Lee, Sang Hyuk Im, Sang Jin Moon

Research output: Contribution to journal › Article › peer-review

87 Citations (Scopus)

Abstract

By substitution of some part of PbI₂ to CuBr₂ in CH₃NH₃PbI₃ perovskite film, we fabricated inverted indium tin oxide (ITO)/poly(3,4-ethlenedioxythiophene):poly(styrenesulphonic acid) (PEDOT: PSS)/CH₃NH₃I(PbI₂)_1−X(CuBr₂)_X (x=0, 0.025, 0.050, 0.075, and 0.100)/Phenyl-C61-butyric acid methyl ester (PCBM)/LiF/Al planar perovskite solar cells via solvent dripping process. Whereas the PbI₂-DMSO₂ (DMSO:dimethyl sulfoxide) intermediate is not flowable during heat-treatment process due to the simultaneous melting and decomposition, the CuBr₂-DMSO₂ intermediate is flowable so that the CH₃NH₃I(PbI₂)_1−X(CuBr₂)_X perovskite could form larger crystalline grains more reproducibly than the MAPbI₃ film. From the capacitance-voltage (C-V) characteristics and density functional theory (DFT) calculation, we could know that the conductivity of MAPbI₃ is much enhanced by CuBr₂ substitution of PbI₂ due to enhance charge carriers. Accordingly, the inverted CH₃NH₃I(PbI₂)_1−X(CuBr₂)_X (x=0.050) planar perovskite solar cells showed greatly improved device efficiency (average of 50 sample = 16.17 ± 0.79 %, best = 17.09 %) than the efficiency of MAPbI₃ device (average of 50 sample = 12.02 ± 0.86 %, best = 13.18 %) and did not show significant current density-voltage (J-V) hysteresis with respect to the scan direction.

Original language	English
Pages (from-to)	330-339
Number of pages	10
Journal	Nano Energy
Volume	27
DOIs	https://doi.org/10.1016/j.nanoen.2016.07.022
Publication status	Published - 2016 Sept 1
Externally published	Yes

Keywords

Copper (II) bromide
Cu-doped perovskite
Perovskite grain growth
Perovskite solar cells
Planar perovskite

ASJC Scopus subject areas

Renewable Energy, Sustainability and the Environment
Materials Science(all)
Electrical and Electronic Engineering

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

Access to Document

10.1016/j.nanoen.2016.07.022

Cite this

@article{b37553a555b1481691cbf8becdbed3a9,

title = "Highly efficient metal halide substituted CH3NH3I(PbI2)1−X(CuBr2)X planar perovskite solar cells",

abstract = "By substitution of some part of PbI2 to CuBr2 in CH3NH3PbI3 perovskite film, we fabricated inverted indium tin oxide (ITO)/poly(3,4-ethlenedioxythiophene):poly(styrenesulphonic acid) (PEDOT: PSS)/CH3NH3I(PbI2)1−X(CuBr2)X (x=0, 0.025, 0.050, 0.075, and 0.100)/Phenyl-C61-butyric acid methyl ester (PCBM)/LiF/Al planar perovskite solar cells via solvent dripping process. Whereas the PbI2-DMSO2 (DMSO:dimethyl sulfoxide) intermediate is not flowable during heat-treatment process due to the simultaneous melting and decomposition, the CuBr2-DMSO2 intermediate is flowable so that the CH3NH3I(PbI2)1−X(CuBr2)X perovskite could form larger crystalline grains more reproducibly than the MAPbI3 film. From the capacitance-voltage (C-V) characteristics and density functional theory (DFT) calculation, we could know that the conductivity of MAPbI3 is much enhanced by CuBr2 substitution of PbI2 due to enhance charge carriers. Accordingly, the inverted CH3NH3I(PbI2)1−X(CuBr2)X (x=0.050) planar perovskite solar cells showed greatly improved device efficiency (average of 50 sample = 16.17 ± 0.79 %, best = 17.09 %) than the efficiency of MAPbI3 device (average of 50 sample = 12.02 ± 0.86 %, best = 13.18 %) and did not show significant current density-voltage (J-V) hysteresis with respect to the scan direction.",

keywords = "Copper (II) bromide, Cu-doped perovskite, Perovskite grain growth, Perovskite solar cells, Planar perovskite",

author = "Muhammad Jahandar and Heo, {Jin Hyuck} and Song, {Chang Eun} and Kong, {Ki Jeong} and Shin, {Won Suk} and Lee, {Jong Cheol} and Im, {Sang Hyuk} and Moon, {Sang Jin}",

note = "Funding Information: M. Jahandar and J. H. Heo contributed equally to this work. This work is financially supported by a grant from the cooperative R&D Program ( B551179-08-03-00 ) funded by the Korea Research Council Industrial Science and Technology and the Technology Development Program to Solve Climate Changes of the National Research Foundation (NRF) funded by the Ministry of Science, ICT & Future Planning ( 2015M1A2A2055631 ), Republic of Korea. Appendix A ",

year = "2016",

month = sep,

day = "1",

doi = "10.1016/j.nanoen.2016.07.022",

language = "English",

volume = "27",

pages = "330--339",

journal = "Nano Energy",

issn = "2211-2855",

publisher = "Elsevier BV",

}

TY - JOUR

T1 - Highly efficient metal halide substituted CH3NH3I(PbI2)1−X(CuBr2)X planar perovskite solar cells

AU - Jahandar, Muhammad

AU - Heo, Jin Hyuck

AU - Song, Chang Eun

AU - Kong, Ki Jeong

AU - Shin, Won Suk

AU - Lee, Jong Cheol

AU - Im, Sang Hyuk

AU - Moon, Sang Jin

N1 - Funding Information: M. Jahandar and J. H. Heo contributed equally to this work. This work is financially supported by a grant from the cooperative R&D Program ( B551179-08-03-00 ) funded by the Korea Research Council Industrial Science and Technology and the Technology Development Program to Solve Climate Changes of the National Research Foundation (NRF) funded by the Ministry of Science, ICT & Future Planning ( 2015M1A2A2055631 ), Republic of Korea. Appendix A

PY - 2016/9/1

Y1 - 2016/9/1

N2 - By substitution of some part of PbI2 to CuBr2 in CH3NH3PbI3 perovskite film, we fabricated inverted indium tin oxide (ITO)/poly(3,4-ethlenedioxythiophene):poly(styrenesulphonic acid) (PEDOT: PSS)/CH3NH3I(PbI2)1−X(CuBr2)X (x=0, 0.025, 0.050, 0.075, and 0.100)/Phenyl-C61-butyric acid methyl ester (PCBM)/LiF/Al planar perovskite solar cells via solvent dripping process. Whereas the PbI2-DMSO2 (DMSO:dimethyl sulfoxide) intermediate is not flowable during heat-treatment process due to the simultaneous melting and decomposition, the CuBr2-DMSO2 intermediate is flowable so that the CH3NH3I(PbI2)1−X(CuBr2)X perovskite could form larger crystalline grains more reproducibly than the MAPbI3 film. From the capacitance-voltage (C-V) characteristics and density functional theory (DFT) calculation, we could know that the conductivity of MAPbI3 is much enhanced by CuBr2 substitution of PbI2 due to enhance charge carriers. Accordingly, the inverted CH3NH3I(PbI2)1−X(CuBr2)X (x=0.050) planar perovskite solar cells showed greatly improved device efficiency (average of 50 sample = 16.17 ± 0.79 %, best = 17.09 %) than the efficiency of MAPbI3 device (average of 50 sample = 12.02 ± 0.86 %, best = 13.18 %) and did not show significant current density-voltage (J-V) hysteresis with respect to the scan direction.

AB - By substitution of some part of PbI2 to CuBr2 in CH3NH3PbI3 perovskite film, we fabricated inverted indium tin oxide (ITO)/poly(3,4-ethlenedioxythiophene):poly(styrenesulphonic acid) (PEDOT: PSS)/CH3NH3I(PbI2)1−X(CuBr2)X (x=0, 0.025, 0.050, 0.075, and 0.100)/Phenyl-C61-butyric acid methyl ester (PCBM)/LiF/Al planar perovskite solar cells via solvent dripping process. Whereas the PbI2-DMSO2 (DMSO:dimethyl sulfoxide) intermediate is not flowable during heat-treatment process due to the simultaneous melting and decomposition, the CuBr2-DMSO2 intermediate is flowable so that the CH3NH3I(PbI2)1−X(CuBr2)X perovskite could form larger crystalline grains more reproducibly than the MAPbI3 film. From the capacitance-voltage (C-V) characteristics and density functional theory (DFT) calculation, we could know that the conductivity of MAPbI3 is much enhanced by CuBr2 substitution of PbI2 due to enhance charge carriers. Accordingly, the inverted CH3NH3I(PbI2)1−X(CuBr2)X (x=0.050) planar perovskite solar cells showed greatly improved device efficiency (average of 50 sample = 16.17 ± 0.79 %, best = 17.09 %) than the efficiency of MAPbI3 device (average of 50 sample = 12.02 ± 0.86 %, best = 13.18 %) and did not show significant current density-voltage (J-V) hysteresis with respect to the scan direction.

KW - Copper (II) bromide

KW - Cu-doped perovskite

KW - Perovskite grain growth

KW - Perovskite solar cells

KW - Planar perovskite

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DO - 10.1016/j.nanoen.2016.07.022

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AN - SCOPUS:84979702264

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JO - Nano Energy

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