Highly flexible Al-doped ZnO/Ag/Al-doped ZnO multilayer films deposited on PET substrates at room temperature

Jun Ho Kim; Da Som Kim; Sun Kyung Kim; Young Zo Yoo; Jeong Hwan Lee; Sang Woo Kim; Tae Yeon Seong

doi:10.1016/j.ceramint.2015.10.146

Highly flexible Al-doped ZnO/Ag/Al-doped ZnO multilayer films deposited on PET substrates at room temperature

Jun Ho Kim, Da Som Kim, Sun Kyung Kim, Young Zo Yoo, Jeong Hwan Lee, Sang Woo Kim, Tae Yeon Seong

Department of Materials Science and Engineering

Research output: Contribution to journal › Article

26 Citations (Scopus)

Abstract

We investigated the effects of the Ag layer thickness on the electrical and optical properties of AZO (36nm)/Ag/AZO (36nm) multilayer films that were deposited on polyethylene terephthalate (PET) substrates using a radio frequency magnetron sputtering method. The AZO/Ag/AZO films had transmittances over 74-89% at 550nm. The relationship between the transmittance and the Ag layer thickness was investigated with three-dimensional finite-difference time-domain (3D FDTD) simulations to understand high transmittance. As the Ag layer thickness increased from 15 to 23nm, the carrier concentration increased from 5.84×10²¹ to 9.66×10²¹ cm^-3, while the sheet resistance decreased from 10.15 to 3.47Ωsq^-1. The Haacke figure of merit (FOM) was calculated for the samples with various Ag layer thicknesses; it was a maximum at 19nm (43.9×10^-3 Ω^-1). The resistance change for the 100nm-thick ITO only films was unstable even after 5 cycles, while that of the AZO (36nm)/Ag (19nm)/AZO (36nm) film remained constant up to 1000 cycles.

Original language	English
Journal	Ceramics International
DOIs	https://doi.org/10.1016/j.ceramint.2015.10.146
Publication status	Accepted/In press - 2015 Aug 25

Keywords

Ag
Al-doped ZnO
Flexible device
Transparent conducting electrode

ASJC Scopus subject areas

Ceramics and Composites
Process Chemistry and Technology
Electronic, Optical and Magnetic Materials
Surfaces, Coatings and Films
Materials Chemistry

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Kim, J. H., Kim, D. S., Kim, S. K., Yoo, Y. Z., Hwan Lee, J., Kim, S. W., & Seong, T. Y. (Accepted/In press). Highly flexible Al-doped ZnO/Ag/Al-doped ZnO multilayer films deposited on PET substrates at room temperature. Ceramics International. https://doi.org/10.1016/j.ceramint.2015.10.146

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abstract = "We investigated the effects of the Ag layer thickness on the electrical and optical properties of AZO (36nm)/Ag/AZO (36nm) multilayer films that were deposited on polyethylene terephthalate (PET) substrates using a radio frequency magnetron sputtering method. The AZO/Ag/AZO films had transmittances over 74-89% at 550nm. The relationship between the transmittance and the Ag layer thickness was investigated with three-dimensional finite-difference time-domain (3D FDTD) simulations to understand high transmittance. As the Ag layer thickness increased from 15 to 23nm, the carrier concentration increased from 5.84×1021 to 9.66×1021 cm-3, while the sheet resistance decreased from 10.15 to 3.47Ωsq-1. The Haacke figure of merit (FOM) was calculated for the samples with various Ag layer thicknesses; it was a maximum at 19nm (43.9×10-3 Ω-1). The resistance change for the 100nm-thick ITO only films was unstable even after 5 cycles, while that of the AZO (36nm)/Ag (19nm)/AZO (36nm) film remained constant up to 1000 cycles.",

keywords = "Ag, Al-doped ZnO, Flexible device, Transparent conducting electrode",

author = "Kim, {Jun Ho} and Kim, {Da Som} and Kim, {Sun Kyung} and Yoo, {Young Zo} and {Hwan Lee}, Jeong and Kim, {Sang Woo} and Seong, {Tae Yeon}",

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AU - Kim, Jun Ho

AU - Kim, Da Som

AU - Kim, Sun Kyung

AU - Yoo, Young Zo

AU - Hwan Lee, Jeong

AU - Kim, Sang Woo

AU - Seong, Tae Yeon

PY - 2015/8/25

Y1 - 2015/8/25

N2 - We investigated the effects of the Ag layer thickness on the electrical and optical properties of AZO (36nm)/Ag/AZO (36nm) multilayer films that were deposited on polyethylene terephthalate (PET) substrates using a radio frequency magnetron sputtering method. The AZO/Ag/AZO films had transmittances over 74-89% at 550nm. The relationship between the transmittance and the Ag layer thickness was investigated with three-dimensional finite-difference time-domain (3D FDTD) simulations to understand high transmittance. As the Ag layer thickness increased from 15 to 23nm, the carrier concentration increased from 5.84×1021 to 9.66×1021 cm-3, while the sheet resistance decreased from 10.15 to 3.47Ωsq-1. The Haacke figure of merit (FOM) was calculated for the samples with various Ag layer thicknesses; it was a maximum at 19nm (43.9×10-3 Ω-1). The resistance change for the 100nm-thick ITO only films was unstable even after 5 cycles, while that of the AZO (36nm)/Ag (19nm)/AZO (36nm) film remained constant up to 1000 cycles.

AB - We investigated the effects of the Ag layer thickness on the electrical and optical properties of AZO (36nm)/Ag/AZO (36nm) multilayer films that were deposited on polyethylene terephthalate (PET) substrates using a radio frequency magnetron sputtering method. The AZO/Ag/AZO films had transmittances over 74-89% at 550nm. The relationship between the transmittance and the Ag layer thickness was investigated with three-dimensional finite-difference time-domain (3D FDTD) simulations to understand high transmittance. As the Ag layer thickness increased from 15 to 23nm, the carrier concentration increased from 5.84×1021 to 9.66×1021 cm-3, while the sheet resistance decreased from 10.15 to 3.47Ωsq-1. The Haacke figure of merit (FOM) was calculated for the samples with various Ag layer thicknesses; it was a maximum at 19nm (43.9×10-3 Ω-1). The resistance change for the 100nm-thick ITO only films was unstable even after 5 cycles, while that of the AZO (36nm)/Ag (19nm)/AZO (36nm) film remained constant up to 1000 cycles.

KW - Ag

KW - Al-doped ZnO

KW - Flexible device

KW - Transparent conducting electrode

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