Abstract
We investigated the effects of the Ag layer thickness on the electrical and optical properties of AZO (36nm)/Ag/AZO (36nm) multilayer films that were deposited on polyethylene terephthalate (PET) substrates using a radio frequency magnetron sputtering method. The AZO/Ag/AZO films had transmittances over 74-89% at 550nm. The relationship between the transmittance and the Ag layer thickness was investigated with three-dimensional finite-difference time-domain (3D FDTD) simulations to understand high transmittance. As the Ag layer thickness increased from 15 to 23nm, the carrier concentration increased from 5.84×1021 to 9.66×1021 cm-3, while the sheet resistance decreased from 10.15 to 3.47Ωsq-1. The Haacke figure of merit (FOM) was calculated for the samples with various Ag layer thicknesses; it was a maximum at 19nm (43.9×10-3 Ω-1). The resistance change for the 100nm-thick ITO only films was unstable even after 5 cycles, while that of the AZO (36nm)/Ag (19nm)/AZO (36nm) film remained constant up to 1000 cycles.
| Original language | English |
|---|---|
| Journal | Ceramics International |
| DOIs | |
| Publication status | Accepted/In press - 2015 Aug 25 |
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Keywords
- Ag
- Al-doped ZnO
- Flexible device
- Transparent conducting electrode
ASJC Scopus subject areas
- Ceramics and Composites
- Process Chemistry and Technology
- Electronic, Optical and Magnetic Materials
- Surfaces, Coatings and Films
- Materials Chemistry
Cite this
Highly flexible Al-doped ZnO/Ag/Al-doped ZnO multilayer films deposited on PET substrates at room temperature. / Kim, Jun Ho; Kim, Da Som; Kim, Sun Kyung; Yoo, Young Zo; Hwan Lee, Jeong; Kim, Sang Woo; Seong, Tae Yeon.
In: Ceramics International, 25.08.2015.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Highly flexible Al-doped ZnO/Ag/Al-doped ZnO multilayer films deposited on PET substrates at room temperature
AU - Kim, Jun Ho
AU - Kim, Da Som
AU - Kim, Sun Kyung
AU - Yoo, Young Zo
AU - Hwan Lee, Jeong
AU - Kim, Sang Woo
AU - Seong, Tae Yeon
PY - 2015/8/25
Y1 - 2015/8/25
N2 - We investigated the effects of the Ag layer thickness on the electrical and optical properties of AZO (36nm)/Ag/AZO (36nm) multilayer films that were deposited on polyethylene terephthalate (PET) substrates using a radio frequency magnetron sputtering method. The AZO/Ag/AZO films had transmittances over 74-89% at 550nm. The relationship between the transmittance and the Ag layer thickness was investigated with three-dimensional finite-difference time-domain (3D FDTD) simulations to understand high transmittance. As the Ag layer thickness increased from 15 to 23nm, the carrier concentration increased from 5.84×1021 to 9.66×1021 cm-3, while the sheet resistance decreased from 10.15 to 3.47Ωsq-1. The Haacke figure of merit (FOM) was calculated for the samples with various Ag layer thicknesses; it was a maximum at 19nm (43.9×10-3 Ω-1). The resistance change for the 100nm-thick ITO only films was unstable even after 5 cycles, while that of the AZO (36nm)/Ag (19nm)/AZO (36nm) film remained constant up to 1000 cycles.
AB - We investigated the effects of the Ag layer thickness on the electrical and optical properties of AZO (36nm)/Ag/AZO (36nm) multilayer films that were deposited on polyethylene terephthalate (PET) substrates using a radio frequency magnetron sputtering method. The AZO/Ag/AZO films had transmittances over 74-89% at 550nm. The relationship between the transmittance and the Ag layer thickness was investigated with three-dimensional finite-difference time-domain (3D FDTD) simulations to understand high transmittance. As the Ag layer thickness increased from 15 to 23nm, the carrier concentration increased from 5.84×1021 to 9.66×1021 cm-3, while the sheet resistance decreased from 10.15 to 3.47Ωsq-1. The Haacke figure of merit (FOM) was calculated for the samples with various Ag layer thicknesses; it was a maximum at 19nm (43.9×10-3 Ω-1). The resistance change for the 100nm-thick ITO only films was unstable even after 5 cycles, while that of the AZO (36nm)/Ag (19nm)/AZO (36nm) film remained constant up to 1000 cycles.
KW - Ag
KW - Al-doped ZnO
KW - Flexible device
KW - Transparent conducting electrode
UR - http://www.scopus.com/inward/record.url?scp=84948980910&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84948980910&partnerID=8YFLogxK
U2 - 10.1016/j.ceramint.2015.10.146
DO - 10.1016/j.ceramint.2015.10.146
M3 - Article
AN - SCOPUS:84948980910
JO - Ceramics International
JF - Ceramics International
SN - 0272-8842
ER -