Highly Flexible and Transparent Memristive Devices Using Cross-Stacked Oxide/Metal/Oxide Electrode Layers

Byeong Ryong Lee; Ju Hyun Park; Tae Ho Lee; Tae Geun Kim

doi:10.1021/acsami.8b17700

Highly Flexible and Transparent Memristive Devices Using Cross-Stacked Oxide/Metal/Oxide Electrode Layers

Byeong Ryong Lee, Ju Hyun Park, Tae Ho Lee, Tae Geun Kim

School of Electrical Engineering

Research output: Contribution to journal › Article › peer-review

12 Citations (Scopus)

Abstract

Flexible and transparent memristive (FT memristors) devices are considered to be among the promising candidates for future nonvolatile memories. To realize these devices, it is essential to achieve flexible and transparent conductive electrodes (TCEs). However, conventionally used TCEs such as indium tin oxide, gallium zinc oxide, and indium zinc oxide are not so flexible and even necessitate thermal annealing for high conductivity and optical transmittance. Here, we introduce Ag/ZnO/Ag- and Ag/Al ₂ O ₃ /Ag-based FT memristors using cross-stacked oxide/metal/oxide electrode layers (i.e., ZnO/Ag/ZnO + ZnO/Ag/ZnO and Al ₂ O ₃ /Ag/Al ₂ O ₃ + Al ₂ O ₃ /Ag/Al ₂ O ₃ ) without using any annealing process on poly(ethylene terephthalate) substrates (PETs). Both Ag/ZnO/Ag- and Ag/Al ₂ O ₃ /Ag-based FT memristors on PETs exhibited excellent properties, including high transmittance (>86% in the visible region), high on/off current ratios (>10 ³ ), and long retention times (>10 ⁵ s). In addition, they showed very stable and flexible characteristics on PETs even after 2500 bending cycles with a bending radius of 8.1 mm. Finally, we analyzed transmission electron microscopy images and time-of-flight secondary ion mass spectroscopy profiles to identify switching mechanisms in these devices.

Original language	English
Pages (from-to)	5215-5222
Number of pages	8
Journal	ACS Applied Materials and Interfaces
Volume	11
Issue number	5
DOIs	https://doi.org/10.1021/acsami.8b17700
Publication status	Published - 2019 Feb 6

Keywords

Al O /Ag/Al O
ZnO/Ag/ZnO
filament
memristive device
transparent and flexible electrode

ASJC Scopus subject areas

Materials Science(all)

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10.1021/acsami.8b17700

Cite this

@article{1a2e35dcc1174f7bb7112e2a384ac7d1,

title = "Highly Flexible and Transparent Memristive Devices Using Cross-Stacked Oxide/Metal/Oxide Electrode Layers",

abstract = " Flexible and transparent memristive (FT memristors) devices are considered to be among the promising candidates for future nonvolatile memories. To realize these devices, it is essential to achieve flexible and transparent conductive electrodes (TCEs). However, conventionally used TCEs such as indium tin oxide, gallium zinc oxide, and indium zinc oxide are not so flexible and even necessitate thermal annealing for high conductivity and optical transmittance. Here, we introduce Ag/ZnO/Ag- and Ag/Al 2 O 3 /Ag-based FT memristors using cross-stacked oxide/metal/oxide electrode layers (i.e., ZnO/Ag/ZnO + ZnO/Ag/ZnO and Al 2 O 3 /Ag/Al 2 O 3 + Al 2 O 3 /Ag/Al 2 O 3 ) without using any annealing process on poly(ethylene terephthalate) substrates (PETs). Both Ag/ZnO/Ag- and Ag/Al 2 O 3 /Ag-based FT memristors on PETs exhibited excellent properties, including high transmittance (>86% in the visible region), high on/off current ratios (>10 3 ), and long retention times (>10 5 s). In addition, they showed very stable and flexible characteristics on PETs even after 2500 bending cycles with a bending radius of 8.1 mm. Finally, we analyzed transmission electron microscopy images and time-of-flight secondary ion mass spectroscopy profiles to identify switching mechanisms in these devices. ",

keywords = "Al O /Ag/Al O, ZnO/Ag/ZnO, filament, memristive device, transparent and flexible electrode",

author = "Lee, {Byeong Ryong} and Park, {Ju Hyun} and Lee, {Tae Ho} and Kim, {Tae Geun}",

note = "Funding Information: This work was supported by the National Research Foundation of Korea (NRF) grant funded by the Korea government (No. 2016R1A3B1908249). Publisher Copyright: {\textcopyright} 2019 American Chemical Society.",

year = "2019",

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doi = "10.1021/acsami.8b17700",

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AU - Lee, Byeong Ryong

AU - Park, Ju Hyun

AU - Lee, Tae Ho

AU - Kim, Tae Geun

N1 - Funding Information: This work was supported by the National Research Foundation of Korea (NRF) grant funded by the Korea government (No. 2016R1A3B1908249). Publisher Copyright: © 2019 American Chemical Society.

PY - 2019/2/6

Y1 - 2019/2/6

N2 - Flexible and transparent memristive (FT memristors) devices are considered to be among the promising candidates for future nonvolatile memories. To realize these devices, it is essential to achieve flexible and transparent conductive electrodes (TCEs). However, conventionally used TCEs such as indium tin oxide, gallium zinc oxide, and indium zinc oxide are not so flexible and even necessitate thermal annealing for high conductivity and optical transmittance. Here, we introduce Ag/ZnO/Ag- and Ag/Al 2 O 3 /Ag-based FT memristors using cross-stacked oxide/metal/oxide electrode layers (i.e., ZnO/Ag/ZnO + ZnO/Ag/ZnO and Al 2 O 3 /Ag/Al 2 O 3 + Al 2 O 3 /Ag/Al 2 O 3 ) without using any annealing process on poly(ethylene terephthalate) substrates (PETs). Both Ag/ZnO/Ag- and Ag/Al 2 O 3 /Ag-based FT memristors on PETs exhibited excellent properties, including high transmittance (>86% in the visible region), high on/off current ratios (>10 3 ), and long retention times (>10 5 s). In addition, they showed very stable and flexible characteristics on PETs even after 2500 bending cycles with a bending radius of 8.1 mm. Finally, we analyzed transmission electron microscopy images and time-of-flight secondary ion mass spectroscopy profiles to identify switching mechanisms in these devices.

AB - Flexible and transparent memristive (FT memristors) devices are considered to be among the promising candidates for future nonvolatile memories. To realize these devices, it is essential to achieve flexible and transparent conductive electrodes (TCEs). However, conventionally used TCEs such as indium tin oxide, gallium zinc oxide, and indium zinc oxide are not so flexible and even necessitate thermal annealing for high conductivity and optical transmittance. Here, we introduce Ag/ZnO/Ag- and Ag/Al 2 O 3 /Ag-based FT memristors using cross-stacked oxide/metal/oxide electrode layers (i.e., ZnO/Ag/ZnO + ZnO/Ag/ZnO and Al 2 O 3 /Ag/Al 2 O 3 + Al 2 O 3 /Ag/Al 2 O 3 ) without using any annealing process on poly(ethylene terephthalate) substrates (PETs). Both Ag/ZnO/Ag- and Ag/Al 2 O 3 /Ag-based FT memristors on PETs exhibited excellent properties, including high transmittance (>86% in the visible region), high on/off current ratios (>10 3 ), and long retention times (>10 5 s). In addition, they showed very stable and flexible characteristics on PETs even after 2500 bending cycles with a bending radius of 8.1 mm. Finally, we analyzed transmission electron microscopy images and time-of-flight secondary ion mass spectroscopy profiles to identify switching mechanisms in these devices.

KW - Al O /Ag/Al O

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ER -

Highly Flexible and Transparent Memristive Devices Using Cross-Stacked Oxide/Metal/Oxide Electrode Layers

Abstract

Keywords

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