Abstract
Flexible and transparent memristive (FT memristors) devices are considered to be among the promising candidates for future nonvolatile memories. To realize these devices, it is essential to achieve flexible and transparent conductive electrodes (TCEs). However, conventionally used TCEs such as indium tin oxide, gallium zinc oxide, and indium zinc oxide are not so flexible and even necessitate thermal annealing for high conductivity and optical transmittance. Here, we introduce Ag/ZnO/Ag- and Ag/Al 2 O 3 /Ag-based FT memristors using cross-stacked oxide/metal/oxide electrode layers (i.e., ZnO/Ag/ZnO + ZnO/Ag/ZnO and Al 2 O 3 /Ag/Al 2 O 3 + Al 2 O 3 /Ag/Al 2 O 3 ) without using any annealing process on poly(ethylene terephthalate) substrates (PETs). Both Ag/ZnO/Ag- and Ag/Al 2 O 3 /Ag-based FT memristors on PETs exhibited excellent properties, including high transmittance (>86% in the visible region), high on/off current ratios (>10 3 ), and long retention times (>10 5 s). In addition, they showed very stable and flexible characteristics on PETs even after 2500 bending cycles with a bending radius of 8.1 mm. Finally, we analyzed transmission electron microscopy images and time-of-flight secondary ion mass spectroscopy profiles to identify switching mechanisms in these devices.
| Original language | English |
|---|---|
| Pages (from-to) | 5215-5222 |
| Number of pages | 8 |
| Journal | ACS Applied Materials and Interfaces |
| Volume | 11 |
| Issue number | 5 |
| DOIs | |
| Publication status | Published - 2019 Feb 6 |
Fingerprint
Keywords
- Al O /Ag/Al O
- filament
- memristive device
- transparent and flexible electrode
- ZnO/Ag/ZnO
ASJC Scopus subject areas
- Materials Science(all)
Cite this
Highly Flexible and Transparent Memristive Devices Using Cross-Stacked Oxide/Metal/Oxide Electrode Layers. / Lee, Byeong Ryong; Park, Ju Hyun; Lee, Tae Ho; Kim, Tae Geun.
In: ACS Applied Materials and Interfaces, Vol. 11, No. 5, 06.02.2019, p. 5215-5222.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Highly Flexible and Transparent Memristive Devices Using Cross-Stacked Oxide/Metal/Oxide Electrode Layers
AU - Lee, Byeong Ryong
AU - Park, Ju Hyun
AU - Lee, Tae Ho
AU - Kim, Tae Geun
PY - 2019/2/6
Y1 - 2019/2/6
N2 - Flexible and transparent memristive (FT memristors) devices are considered to be among the promising candidates for future nonvolatile memories. To realize these devices, it is essential to achieve flexible and transparent conductive electrodes (TCEs). However, conventionally used TCEs such as indium tin oxide, gallium zinc oxide, and indium zinc oxide are not so flexible and even necessitate thermal annealing for high conductivity and optical transmittance. Here, we introduce Ag/ZnO/Ag- and Ag/Al 2 O 3 /Ag-based FT memristors using cross-stacked oxide/metal/oxide electrode layers (i.e., ZnO/Ag/ZnO + ZnO/Ag/ZnO and Al 2 O 3 /Ag/Al 2 O 3 + Al 2 O 3 /Ag/Al 2 O 3 ) without using any annealing process on poly(ethylene terephthalate) substrates (PETs). Both Ag/ZnO/Ag- and Ag/Al 2 O 3 /Ag-based FT memristors on PETs exhibited excellent properties, including high transmittance (>86% in the visible region), high on/off current ratios (>10 3 ), and long retention times (>10 5 s). In addition, they showed very stable and flexible characteristics on PETs even after 2500 bending cycles with a bending radius of 8.1 mm. Finally, we analyzed transmission electron microscopy images and time-of-flight secondary ion mass spectroscopy profiles to identify switching mechanisms in these devices.
AB - Flexible and transparent memristive (FT memristors) devices are considered to be among the promising candidates for future nonvolatile memories. To realize these devices, it is essential to achieve flexible and transparent conductive electrodes (TCEs). However, conventionally used TCEs such as indium tin oxide, gallium zinc oxide, and indium zinc oxide are not so flexible and even necessitate thermal annealing for high conductivity and optical transmittance. Here, we introduce Ag/ZnO/Ag- and Ag/Al 2 O 3 /Ag-based FT memristors using cross-stacked oxide/metal/oxide electrode layers (i.e., ZnO/Ag/ZnO + ZnO/Ag/ZnO and Al 2 O 3 /Ag/Al 2 O 3 + Al 2 O 3 /Ag/Al 2 O 3 ) without using any annealing process on poly(ethylene terephthalate) substrates (PETs). Both Ag/ZnO/Ag- and Ag/Al 2 O 3 /Ag-based FT memristors on PETs exhibited excellent properties, including high transmittance (>86% in the visible region), high on/off current ratios (>10 3 ), and long retention times (>10 5 s). In addition, they showed very stable and flexible characteristics on PETs even after 2500 bending cycles with a bending radius of 8.1 mm. Finally, we analyzed transmission electron microscopy images and time-of-flight secondary ion mass spectroscopy profiles to identify switching mechanisms in these devices.
KW - Al O /Ag/Al O
KW - filament
KW - memristive device
KW - transparent and flexible electrode
KW - ZnO/Ag/ZnO
UR - http://www.scopus.com/inward/record.url?scp=85061124312&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=85061124312&partnerID=8YFLogxK
U2 - 10.1021/acsami.8b17700
DO - 10.1021/acsami.8b17700
M3 - Article
VL - 11
SP - 5215
EP - 5222
JO - ACS applied materials & interfaces
JF - ACS applied materials & interfaces
SN - 1944-8244
IS - 5
ER -