TY - JOUR
T1 - Highly Flexible and Transparent Memristive Devices Using Cross-Stacked Oxide/Metal/Oxide Electrode Layers
AU - Lee, Byeong Ryong
AU - Park, Ju Hyun
AU - Lee, Tae Ho
AU - Kim, Tae Geun
N1 - Funding Information:
This work was supported by the National Research Foundation of Korea (NRF) grant funded by the Korea government (No. 2016R1A3B1908249).
PY - 2019/2/6
Y1 - 2019/2/6
N2 - Flexible and transparent memristive (FT memristors) devices are considered to be among the promising candidates for future nonvolatile memories. To realize these devices, it is essential to achieve flexible and transparent conductive electrodes (TCEs). However, conventionally used TCEs such as indium tin oxide, gallium zinc oxide, and indium zinc oxide are not so flexible and even necessitate thermal annealing for high conductivity and optical transmittance. Here, we introduce Ag/ZnO/Ag- and Ag/Al 2 O 3 /Ag-based FT memristors using cross-stacked oxide/metal/oxide electrode layers (i.e., ZnO/Ag/ZnO + ZnO/Ag/ZnO and Al 2 O 3 /Ag/Al 2 O 3 + Al 2 O 3 /Ag/Al 2 O 3 ) without using any annealing process on poly(ethylene terephthalate) substrates (PETs). Both Ag/ZnO/Ag- and Ag/Al 2 O 3 /Ag-based FT memristors on PETs exhibited excellent properties, including high transmittance (>86% in the visible region), high on/off current ratios (>10 3 ), and long retention times (>10 5 s). In addition, they showed very stable and flexible characteristics on PETs even after 2500 bending cycles with a bending radius of 8.1 mm. Finally, we analyzed transmission electron microscopy images and time-of-flight secondary ion mass spectroscopy profiles to identify switching mechanisms in these devices.
AB - Flexible and transparent memristive (FT memristors) devices are considered to be among the promising candidates for future nonvolatile memories. To realize these devices, it is essential to achieve flexible and transparent conductive electrodes (TCEs). However, conventionally used TCEs such as indium tin oxide, gallium zinc oxide, and indium zinc oxide are not so flexible and even necessitate thermal annealing for high conductivity and optical transmittance. Here, we introduce Ag/ZnO/Ag- and Ag/Al 2 O 3 /Ag-based FT memristors using cross-stacked oxide/metal/oxide electrode layers (i.e., ZnO/Ag/ZnO + ZnO/Ag/ZnO and Al 2 O 3 /Ag/Al 2 O 3 + Al 2 O 3 /Ag/Al 2 O 3 ) without using any annealing process on poly(ethylene terephthalate) substrates (PETs). Both Ag/ZnO/Ag- and Ag/Al 2 O 3 /Ag-based FT memristors on PETs exhibited excellent properties, including high transmittance (>86% in the visible region), high on/off current ratios (>10 3 ), and long retention times (>10 5 s). In addition, they showed very stable and flexible characteristics on PETs even after 2500 bending cycles with a bending radius of 8.1 mm. Finally, we analyzed transmission electron microscopy images and time-of-flight secondary ion mass spectroscopy profiles to identify switching mechanisms in these devices.
KW - Al O /Ag/Al O
KW - ZnO/Ag/ZnO
KW - filament
KW - memristive device
KW - transparent and flexible electrode
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U2 - 10.1021/acsami.8b17700
DO - 10.1021/acsami.8b17700
M3 - Article
C2 - 30623639
AN - SCOPUS:85061124312
VL - 11
SP - 5215
EP - 5222
JO - ACS applied materials & interfaces
JF - ACS applied materials & interfaces
SN - 1944-8244
IS - 5
ER -