Highly-integrable K-band power dividers based on digital CMOS technology

Sanggu Park, Jinho Jeong, Sanggeun Jeon

Research output: Contribution to journalArticle

Abstract

In this paper, we present two-way and four-way power dividers that operate in wideband over K-band. To maximize the integrability with other circuit blocks, the power dividers are designed in a purely digital CMOS technology without any RF back-end-of-line process. We discuss a design issue arising from the high loss of transmission lines in the digital process. A capacitor-loaded Wilkinson topology is adopted for a compact size. The proposed dividers are implemented in a 0.13-μm digital CMOS process with automatic dummy metal fills. We also analyze the effect of the dummy fills on the power divider performance, showing good agreement with measured results.

Original languageEnglish
Pages (from-to)114-120
Number of pages7
JournalIEICE Electronics Express
Volume8
Issue number3
DOIs
Publication statusPublished - 2011 Feb 10

Fingerprint

dividers
extremely high frequencies
Electric lines
CMOS
Capacitors
Metals
Topology
dummies
Networks (circuits)
transmission lines
capacitors
topology
broadband
metals

Keywords

  • Digital CMOS process
  • Dummy metal fills
  • Power divider
  • Wilkinson divider

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

Cite this

Highly-integrable K-band power dividers based on digital CMOS technology. / Park, Sanggu; Jeong, Jinho; Jeon, Sanggeun.

In: IEICE Electronics Express, Vol. 8, No. 3, 10.02.2011, p. 114-120.

Research output: Contribution to journalArticle

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