Highly low resistance and transparent Ni/ZnO ohmic contacts to p-type GaN

June O. Song, Kyoung Kook Kim, Seong Ju Park, Tae Yeon Seong

Research output: Contribution to journalArticle

101 Citations (Scopus)

Abstract

Highly low resistance and transparent Ni/ZnO ohmic contacts to p-type GaN were investigated. The as-deposited Ni/Al-doped ZnO (AZO) contact showed a nonohmic characteristics due to the insulating nature of the as-deposited AZO. It was shown that annealing the contact at 550°C for 5 min produce a specific contact resistance of 6.23 × 10-6 ω cm 2.

Original languageEnglish
Pages (from-to)479-481
Number of pages3
JournalApplied Physics Letters
Volume83
Issue number3
DOIs
Publication statusPublished - 2003 Jul 21

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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