Highly low resistance and transparent Ni/ZnO ohmic contacts to p-type GaN

June O. Song; Kyoung Kook Kim; Seong Ju Park; Tae Yeon Seong

doi:10.1063/1.1591236

Highly low resistance and transparent Ni/ZnO ohmic contacts to p-type GaN

June O. Song, Kyoung Kook Kim, Seong Ju Park, Tae Yeon Seong

Research output: Contribution to journal › Article › peer-review

102 Citations (Scopus)

Abstract

Highly low resistance and transparent Ni/ZnO ohmic contacts to p-type GaN were investigated. The as-deposited Ni/Al-doped ZnO (AZO) contact showed a nonohmic characteristics due to the insulating nature of the as-deposited AZO. It was shown that annealing the contact at 550°C for 5 min produce a specific contact resistance of 6.23 × 10^-6 ω cm ².

Original language	English
Pages (from-to)	479-481
Number of pages	3
Journal	Applied Physics Letters
Volume	83
Issue number	3
DOIs	https://doi.org/10.1063/1.1591236
Publication status	Published - 2003 Jul 21
Externally published	Yes

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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10.1063/1.1591236

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title = "Highly low resistance and transparent Ni/ZnO ohmic contacts to p-type GaN",

abstract = "Highly low resistance and transparent Ni/ZnO ohmic contacts to p-type GaN were investigated. The as-deposited Ni/Al-doped ZnO (AZO) contact showed a nonohmic characteristics due to the insulating nature of the as-deposited AZO. It was shown that annealing the contact at 550°C for 5 min produce a specific contact resistance of 6.23 × 10-6 ω cm 2.",

author = "Song, {June O.} and Kim, {Kyoung Kook} and Park, {Seong Ju} and Seong, {Tae Yeon}",

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AU - Seong, Tae Yeon

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AB - Highly low resistance and transparent Ni/ZnO ohmic contacts to p-type GaN were investigated. The as-deposited Ni/Al-doped ZnO (AZO) contact showed a nonohmic characteristics due to the insulating nature of the as-deposited AZO. It was shown that annealing the contact at 550°C for 5 min produce a specific contact resistance of 6.23 × 10-6 ω cm 2.

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Highly low resistance and transparent Ni/ZnO ohmic contacts to p-type GaN

Abstract

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