Highly low resistance and transparent Ni/ZnO ohmic contacts to p-type GaN were investigated. The as-deposited Ni/Al-doped ZnO (AZO) contact showed a nonohmic characteristics due to the insulating nature of the as-deposited AZO. It was shown that annealing the contact at 550°C for 5 min produce a specific contact resistance of 6.23 × 10-6 ω cm 2.
|Number of pages||3|
|Journal||Applied Physics Letters|
|Publication status||Published - 2003 Jul 21|
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)