Highly reflective and low resistance indium oxide/Ag ohmic contacts to P-GaN for flip-chip light emitting diodes

June O. Song, Sang Kyun Kim, Dong Seok Leem, Joon Seop Kwak, Yongjo Park, Tae Yeon Seong

Research output: Contribution to conferencePaper

Abstract

We have investigated Mg- and Cu-doped In2O3/Ag schemes for the formation of high-quality ohmic contacts to p-type GaN for high power flip-chip light emitting diodes (LEDs). It is shown that the doped In 2O3/Ag contacts produce specific contact resistance in the range of ∼10-4 - ∼10-5 ωcm2 and reflectance of about 90% at a wavelength of 460 nm when annealed at 530°C for 1 min. It is also shown that unlike single Ag contacts, the doped In 2O3/Ag contacts are fairly stable without surface and interface degradation although annealed at 530°C for 1 min in air ambient. In addition, blue InGaN/GaN LEDs fabricated with the annealed In 2O3/Ag contact layers give forward-bias voltages of 3.0 - 3.15 V at an injection current of 20 mA. The results strongly indicate that the doped In2O3/Ag scheme can be a highly promising p-type contact for high power GaN-based FCLEDs for solid-state lighting application.

Original languageEnglish
Pages236-244
Number of pages9
Publication statusPublished - 2004
EventState-of-the-Art Program on Compound Semiconductors XLI and Nitride and Wide Bandgap Semiconductors for Sensors, Photonics, and Electronics V - Proceedings of the International Symposia - Honolulu, HI, United States
Duration: 2004 Oct 32004 Oct 8

Other

OtherState-of-the-Art Program on Compound Semiconductors XLI and Nitride and Wide Bandgap Semiconductors for Sensors, Photonics, and Electronics V - Proceedings of the International Symposia
CountryUnited States
CityHonolulu, HI
Period04/10/304/10/8

ASJC Scopus subject areas

  • Engineering(all)

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    Song, J. O., Kim, S. K., Leem, D. S., Kwak, J. S., Park, Y., & Seong, T. Y. (2004). Highly reflective and low resistance indium oxide/Ag ohmic contacts to P-GaN for flip-chip light emitting diodes. 236-244. Paper presented at State-of-the-Art Program on Compound Semiconductors XLI and Nitride and Wide Bandgap Semiconductors for Sensors, Photonics, and Electronics V - Proceedings of the International Symposia, Honolulu, HI, United States.