Highly reflective and low resistance indium oxide/Ag ohmic contacts to P-GaN for flip-chip light emitting diodes

June O. Song, Sang Kyun Kim, Dong Seok Leem, Joon Seop Kwak, Yongjo Park, Tae Yeon Seong

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

We have investigated Mg- and Cu-doped In2O3/Ag schemes for the formation of high-quality ohmic contacts to p-type GaN for high power flip-chip light emitting diodes (LEDs). It is shown that the doped In 2O3/Ag contacts produce specific contact resistance in the range of ∼10-4 - ∼10-5 ωcm2 and reflectance of about 90% at a wavelength of 460 nm when annealed at 530°C for 1 min. It is also shown that unlike single Ag contacts, the doped In 2O3/Ag contacts are fairly stable without surface and interface degradation although annealed at 530°C for 1 min in air ambient. In addition, blue InGaN/GaN LEDs fabricated with the annealed In 2O3/Ag contact layers give forward-bias voltages of 3.0 - 3.15 V at an injection current of 20 mA. The results strongly indicate that the doped In2O3/Ag scheme can be a highly promising p-type contact for high power GaN-based FCLEDs for solid-state lighting application.

Original languageEnglish
Title of host publicationProceedings - Electrochemical Society
EditorsH.M. Ng, A.G. Baca
Pages236-244
Number of pages9
Volume6
Publication statusPublished - 2004 Dec 1
Externally publishedYes
EventState-of-the-Art Program on Compound Semiconductors XLI and Nitride and Wide Bandgap Semiconductors for Sensors, Photonics, and Electronics V - Proceedings of the International Symposia - Honolulu, HI, United States
Duration: 2004 Oct 32004 Oct 8

Other

OtherState-of-the-Art Program on Compound Semiconductors XLI and Nitride and Wide Bandgap Semiconductors for Sensors, Photonics, and Electronics V - Proceedings of the International Symposia
CountryUnited States
CityHonolulu, HI
Period04/10/304/10/8

Fingerprint

Ohmic contacts
Indium
Light emitting diodes
Oxides
Contact resistance
Bias voltage
Lighting
Degradation
Wavelength
Air

ASJC Scopus subject areas

  • Engineering(all)

Cite this

Song, J. O., Kim, S. K., Leem, D. S., Kwak, J. S., Park, Y., & Seong, T. Y. (2004). Highly reflective and low resistance indium oxide/Ag ohmic contacts to P-GaN for flip-chip light emitting diodes. In H. M. Ng, & A. G. Baca (Eds.), Proceedings - Electrochemical Society (Vol. 6, pp. 236-244)

Highly reflective and low resistance indium oxide/Ag ohmic contacts to P-GaN for flip-chip light emitting diodes. / Song, June O.; Kim, Sang Kyun; Leem, Dong Seok; Kwak, Joon Seop; Park, Yongjo; Seong, Tae Yeon.

Proceedings - Electrochemical Society. ed. / H.M. Ng; A.G. Baca. Vol. 6 2004. p. 236-244.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Song, JO, Kim, SK, Leem, DS, Kwak, JS, Park, Y & Seong, TY 2004, Highly reflective and low resistance indium oxide/Ag ohmic contacts to P-GaN for flip-chip light emitting diodes. in HM Ng & AG Baca (eds), Proceedings - Electrochemical Society. vol. 6, pp. 236-244, State-of-the-Art Program on Compound Semiconductors XLI and Nitride and Wide Bandgap Semiconductors for Sensors, Photonics, and Electronics V - Proceedings of the International Symposia, Honolulu, HI, United States, 04/10/3.
Song JO, Kim SK, Leem DS, Kwak JS, Park Y, Seong TY. Highly reflective and low resistance indium oxide/Ag ohmic contacts to P-GaN for flip-chip light emitting diodes. In Ng HM, Baca AG, editors, Proceedings - Electrochemical Society. Vol. 6. 2004. p. 236-244
Song, June O. ; Kim, Sang Kyun ; Leem, Dong Seok ; Kwak, Joon Seop ; Park, Yongjo ; Seong, Tae Yeon. / Highly reflective and low resistance indium oxide/Ag ohmic contacts to P-GaN for flip-chip light emitting diodes. Proceedings - Electrochemical Society. editor / H.M. Ng ; A.G. Baca. Vol. 6 2004. pp. 236-244
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abstract = "We have investigated Mg- and Cu-doped In2O3/Ag schemes for the formation of high-quality ohmic contacts to p-type GaN for high power flip-chip light emitting diodes (LEDs). It is shown that the doped In 2O3/Ag contacts produce specific contact resistance in the range of ∼10-4 - ∼10-5 ωcm2 and reflectance of about 90{\%} at a wavelength of 460 nm when annealed at 530°C for 1 min. It is also shown that unlike single Ag contacts, the doped In 2O3/Ag contacts are fairly stable without surface and interface degradation although annealed at 530°C for 1 min in air ambient. In addition, blue InGaN/GaN LEDs fabricated with the annealed In 2O3/Ag contact layers give forward-bias voltages of 3.0 - 3.15 V at an injection current of 20 mA. The results strongly indicate that the doped In2O3/Ag scheme can be a highly promising p-type contact for high power GaN-based FCLEDs for solid-state lighting application.",
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AU - Park, Yongjo

AU - Seong, Tae Yeon

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N2 - We have investigated Mg- and Cu-doped In2O3/Ag schemes for the formation of high-quality ohmic contacts to p-type GaN for high power flip-chip light emitting diodes (LEDs). It is shown that the doped In 2O3/Ag contacts produce specific contact resistance in the range of ∼10-4 - ∼10-5 ωcm2 and reflectance of about 90% at a wavelength of 460 nm when annealed at 530°C for 1 min. It is also shown that unlike single Ag contacts, the doped In 2O3/Ag contacts are fairly stable without surface and interface degradation although annealed at 530°C for 1 min in air ambient. In addition, blue InGaN/GaN LEDs fabricated with the annealed In 2O3/Ag contact layers give forward-bias voltages of 3.0 - 3.15 V at an injection current of 20 mA. The results strongly indicate that the doped In2O3/Ag scheme can be a highly promising p-type contact for high power GaN-based FCLEDs for solid-state lighting application.

AB - We have investigated Mg- and Cu-doped In2O3/Ag schemes for the formation of high-quality ohmic contacts to p-type GaN for high power flip-chip light emitting diodes (LEDs). It is shown that the doped In 2O3/Ag contacts produce specific contact resistance in the range of ∼10-4 - ∼10-5 ωcm2 and reflectance of about 90% at a wavelength of 460 nm when annealed at 530°C for 1 min. It is also shown that unlike single Ag contacts, the doped In 2O3/Ag contacts are fairly stable without surface and interface degradation although annealed at 530°C for 1 min in air ambient. In addition, blue InGaN/GaN LEDs fabricated with the annealed In 2O3/Ag contact layers give forward-bias voltages of 3.0 - 3.15 V at an injection current of 20 mA. The results strongly indicate that the doped In2O3/Ag scheme can be a highly promising p-type contact for high power GaN-based FCLEDs for solid-state lighting application.

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