Abstract
We have investigated Mg- and Cu-doped In2O3/Ag schemes for the formation of high-quality ohmic contacts to p-type GaN for high power flip-chip light emitting diodes (LEDs). It is shown that the doped In 2O3/Ag contacts produce specific contact resistance in the range of ∼10-4 - ∼10-5 ωcm2 and reflectance of about 90% at a wavelength of 460 nm when annealed at 530°C for 1 min. It is also shown that unlike single Ag contacts, the doped In 2O3/Ag contacts are fairly stable without surface and interface degradation although annealed at 530°C for 1 min in air ambient. In addition, blue InGaN/GaN LEDs fabricated with the annealed In 2O3/Ag contact layers give forward-bias voltages of 3.0 - 3.15 V at an injection current of 20 mA. The results strongly indicate that the doped In2O3/Ag scheme can be a highly promising p-type contact for high power GaN-based FCLEDs for solid-state lighting application.
| Original language | English |
|---|---|
| Title of host publication | Proceedings - Electrochemical Society |
| Editors | H.M. Ng, A.G. Baca |
| Pages | 236-244 |
| Number of pages | 9 |
| Volume | 6 |
| Publication status | Published - 2004 Dec 1 |
| Externally published | Yes |
| Event | State-of-the-Art Program on Compound Semiconductors XLI and Nitride and Wide Bandgap Semiconductors for Sensors, Photonics, and Electronics V - Proceedings of the International Symposia - Honolulu, HI, United States Duration: 2004 Oct 3 → 2004 Oct 8 |
Other
| Other | State-of-the-Art Program on Compound Semiconductors XLI and Nitride and Wide Bandgap Semiconductors for Sensors, Photonics, and Electronics V - Proceedings of the International Symposia |
|---|---|
| Country | United States |
| City | Honolulu, HI |
| Period | 04/10/3 → 04/10/8 |
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ASJC Scopus subject areas
- Engineering(all)
Cite this
Highly reflective and low resistance indium oxide/Ag ohmic contacts to P-GaN for flip-chip light emitting diodes. / Song, June O.; Kim, Sang Kyun; Leem, Dong Seok; Kwak, Joon Seop; Park, Yongjo; Seong, Tae Yeon.
Proceedings - Electrochemical Society. ed. / H.M. Ng; A.G. Baca. Vol. 6 2004. p. 236-244.Research output: Chapter in Book/Report/Conference proceeding › Conference contribution
}
TY - GEN
T1 - Highly reflective and low resistance indium oxide/Ag ohmic contacts to P-GaN for flip-chip light emitting diodes
AU - Song, June O.
AU - Kim, Sang Kyun
AU - Leem, Dong Seok
AU - Kwak, Joon Seop
AU - Park, Yongjo
AU - Seong, Tae Yeon
PY - 2004/12/1
Y1 - 2004/12/1
N2 - We have investigated Mg- and Cu-doped In2O3/Ag schemes for the formation of high-quality ohmic contacts to p-type GaN for high power flip-chip light emitting diodes (LEDs). It is shown that the doped In 2O3/Ag contacts produce specific contact resistance in the range of ∼10-4 - ∼10-5 ωcm2 and reflectance of about 90% at a wavelength of 460 nm when annealed at 530°C for 1 min. It is also shown that unlike single Ag contacts, the doped In 2O3/Ag contacts are fairly stable without surface and interface degradation although annealed at 530°C for 1 min in air ambient. In addition, blue InGaN/GaN LEDs fabricated with the annealed In 2O3/Ag contact layers give forward-bias voltages of 3.0 - 3.15 V at an injection current of 20 mA. The results strongly indicate that the doped In2O3/Ag scheme can be a highly promising p-type contact for high power GaN-based FCLEDs for solid-state lighting application.
AB - We have investigated Mg- and Cu-doped In2O3/Ag schemes for the formation of high-quality ohmic contacts to p-type GaN for high power flip-chip light emitting diodes (LEDs). It is shown that the doped In 2O3/Ag contacts produce specific contact resistance in the range of ∼10-4 - ∼10-5 ωcm2 and reflectance of about 90% at a wavelength of 460 nm when annealed at 530°C for 1 min. It is also shown that unlike single Ag contacts, the doped In 2O3/Ag contacts are fairly stable without surface and interface degradation although annealed at 530°C for 1 min in air ambient. In addition, blue InGaN/GaN LEDs fabricated with the annealed In 2O3/Ag contact layers give forward-bias voltages of 3.0 - 3.15 V at an injection current of 20 mA. The results strongly indicate that the doped In2O3/Ag scheme can be a highly promising p-type contact for high power GaN-based FCLEDs for solid-state lighting application.
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UR - http://www.scopus.com/inward/citedby.url?scp=17044408780&partnerID=8YFLogxK
M3 - Conference contribution
VL - 6
SP - 236
EP - 244
BT - Proceedings - Electrochemical Society
A2 - Ng, H.M.
A2 - Baca, A.G.
ER -