We have investigated Mg- and Cu-doped In2O3/Ag schemes for the formation of high-quality ohmic contacts to p-type GaN for high power flip-chip light emitting diodes (LEDs). It is shown that the doped In 2O3/Ag contacts produce specific contact resistance in the range of ∼10-4 - ∼10-5 ωcm2 and reflectance of about 90% at a wavelength of 460 nm when annealed at 530°C for 1 min. It is also shown that unlike single Ag contacts, the doped In 2O3/Ag contacts are fairly stable without surface and interface degradation although annealed at 530°C for 1 min in air ambient. In addition, blue InGaN/GaN LEDs fabricated with the annealed In 2O3/Ag contact layers give forward-bias voltages of 3.0 - 3.15 V at an injection current of 20 mA. The results strongly indicate that the doped In2O3/Ag scheme can be a highly promising p-type contact for high power GaN-based FCLEDs for solid-state lighting application.
|Number of pages||9|
|Publication status||Published - 2004|
|Event||State-of-the-Art Program on Compound Semiconductors XLI and Nitride and Wide Bandgap Semiconductors for Sensors, Photonics, and Electronics V - Proceedings of the International Symposia - Honolulu, HI, United States|
Duration: 2004 Oct 3 → 2004 Oct 8
|Other||State-of-the-Art Program on Compound Semiconductors XLI and Nitride and Wide Bandgap Semiconductors for Sensors, Photonics, and Electronics V - Proceedings of the International Symposia|
|Period||04/10/3 → 04/10/8|
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