Highly reflective and low resistance indium tin oxide/ag ohmic contacts to p-type GaN for flip-chip light emitting diodes

Woong Ki Hong, June O. Song, Hyun Gi Hong, Keun Yong Ban, Takhee Lee, J. S. Kwak, Y. Park, Tae Yeon Seong

Research output: Contribution to journalArticle

18 Citations (Scopus)

Abstract

We report on the formation of high-quality Ag contacts to p-GaN by using indium-tin oxide (ITO) interlayers. The ITO (2 nm)/Ag (200 nm) contacts give specific contact resistances of 3.26-4.34 × 10-4 Ω cm2 when annealed at 330-530°C for 1 min in air. The reflectance of the ITO (2 nm)/Ag (200 nm) is measured to be 85% at 405 nm, which is much better than that of the ITO (55 nm)/Ag (200 nm) and the single Ag contacts. Light-emitting diodes fabricated with the ITO (2 nm)/Ag (200 nm) contact gives much higher output power than those with the ITO (55 nm)/Ag and single-Ag reflective contacts.

Original languageEnglish
Pages (from-to)G320-G323
JournalElectrochemical and Solid-State Letters
Volume8
Issue number11
DOIs
Publication statusPublished - 2005

ASJC Scopus subject areas

  • Chemical Engineering(all)
  • Materials Science(all)
  • Physical and Theoretical Chemistry
  • Electrochemistry
  • Electrical and Electronic Engineering

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