Highly reflective and low resistance indium tin oxide/ag ohmic contacts to p-type GaN for flip-chip light emitting diodes

Woong K. Hong, June O. Song, Hyun G. Hong, Keun Yong Ban, Takhee Lee, J. S. Kwak, Y. Park, Tae Yeon Seong

Research output: Contribution to journalArticle

18 Citations (Scopus)


We report on the formation of high-quality Ag contacts to p-GaN by using indium-tin oxide (ITO) interlayers. The ITO (2 nm)/Ag (200 nm) contacts give specific contact resistances of 3.26-4.34 × 10-4 Ω cm2 when annealed at 330-530°C for 1 min in air. The reflectance of the ITO (2 nm)/Ag (200 nm) is measured to be 85% at 405 nm, which is much better than that of the ITO (55 nm)/Ag (200 nm) and the single Ag contacts. Light-emitting diodes fabricated with the ITO (2 nm)/Ag (200 nm) contact gives much higher output power than those with the ITO (55 nm)/Ag and single-Ag reflective contacts.

Original languageEnglish
JournalElectrochemical and Solid-State Letters
Issue number11
Publication statusPublished - 2005 Nov 21


ASJC Scopus subject areas

  • Electrochemistry
  • Materials Science(all)

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