Highly reliable Ag/Zn/Ag ohmic reflector for high-power GaN-based vertical light-emitting diode

Woong Sun Yum, Joon Woo Jeon, Jun Suk Sung, Tae Yeon Seong

Research output: Contribution to journalArticle

16 Citations (Scopus)

Abstract

We report the improved performance of InGaN/GaN-based lightemitting diodes (LEDs) through Ag reflectors combined with a Zn middle layer. It is shown that the Zn middle layer (5 nm thick) suppresses the agglomeration of Ag reflectors by forming ZnO and dissolving into Ag. The Ag/Zn/Ag contacts show a specific contact resistance of 6.2 × 10-5 cm2 and reflectance of ∼83% at a wavelength of 440 nm when annealed at 500 Cwhich are much better than those of Ag only contacts. Blue LEDs fabricated with the 500 C-annealed Ag/Zn/Ag reflectors show a forward voltage of 2.98 V at an injection current of 20 mAwhich is lower than that (3.02 V) of LEDs with the annealed Ag only contacts. LEDs with the 500 C-annealed Ag/Zn/Ag contacts exhibit 34% higher output power (at 20 mA) than LEDs with the annealed Ag only contacts.

Original languageEnglish
Pages (from-to)19194-19199
Number of pages6
JournalOptics Express
Volume20
Issue number17
DOIs
Publication statusPublished - 2012 Aug 13

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reflectors
light emitting diodes
diodes
agglomeration
contact resistance
dissolving
injection
reflectance
output
electric potential
wavelengths

ASJC Scopus subject areas

  • Atomic and Molecular Physics, and Optics

Cite this

Highly reliable Ag/Zn/Ag ohmic reflector for high-power GaN-based vertical light-emitting diode. / Yum, Woong Sun; Jeon, Joon Woo; Sung, Jun Suk; Seong, Tae Yeon.

In: Optics Express, Vol. 20, No. 17, 13.08.2012, p. 19194-19199.

Research output: Contribution to journalArticle

Yum, Woong Sun ; Jeon, Joon Woo ; Sung, Jun Suk ; Seong, Tae Yeon. / Highly reliable Ag/Zn/Ag ohmic reflector for high-power GaN-based vertical light-emitting diode. In: Optics Express. 2012 ; Vol. 20, No. 17. pp. 19194-19199.
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