Highly selective dry etching of III nitrides using an inductively coupled Cl2/Ar/O2 plasma

Ji Myon Lee, Ki Myung Chang, In-Hwan Lee, Seong Ju Park

Research output: Contribution to journalArticle

27 Citations (Scopus)

Abstract

GaN, AlxGa1-xN and InxGa1-xN were prepared by dry etching with Cl2/Ar/O2 plasma. The etch rates and selectivities were determined for the nitrides using an inductively-coupled plasma reactor. Results showed that the oxygen flow rate and the plasma parameters significantly affected the etch characteristics of the semiconductors.

Original languageEnglish
Pages (from-to)1409-1411
Number of pages3
JournalJournal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume18
Issue number3
DOIs
Publication statusPublished - 2000 May 1
Externally publishedYes

Fingerprint

Dry etching
Nitrides
nitrides
etching
Plasmas
Inductively coupled plasma
Flow rate
Semiconductor materials
Oxygen
flow velocity
selectivity
reactors
oxygen

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Electrical and Electronic Engineering

Cite this

Highly selective dry etching of III nitrides using an inductively coupled Cl2/Ar/O2 plasma. / Lee, Ji Myon; Chang, Ki Myung; Lee, In-Hwan; Park, Seong Ju.

In: Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, Vol. 18, No. 3, 01.05.2000, p. 1409-1411.

Research output: Contribution to journalArticle

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