GaN, AlxGa1-xN and InxGa1-xN were prepared by dry etching with Cl2/Ar/O2 plasma. The etch rates and selectivities were determined for the nitrides using an inductively-coupled plasma reactor. Results showed that the oxygen flow rate and the plasma parameters significantly affected the etch characteristics of the semiconductors.
|Number of pages||3|
|Journal||Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures|
|Publication status||Published - 2000 May 1|
ASJC Scopus subject areas
- Condensed Matter Physics
- Electrical and Electronic Engineering