Highly sensitive and selective gas sensors using p-type oxide semiconductors: Overview

Hyo Joong Kim, Jong Heun Lee

Research output: Contribution to journalArticle

832 Citations (Scopus)

Abstract

High-performance gas sensors prepared using p-type oxide semiconductors such as NiO, CuO, Cr2O3, Co3O4, and Mn3O4 were reviewed. The ionized adsorption of oxygen on p-type oxide semiconductors leads to the formation of hole-accumulation layers (HALs), and conduction occurs mainly along the near-surface HAL. Thus, the chemoresistive variations of undoped p-type oxide semiconductors are lower than those induced at the electron-depletion layers of n-type oxide semiconductors. However, highly sensitive and selective p-type oxide-semiconductor-based gas sensors can be designed either by controlling the carrier concentration through aliovalent doping or by promoting the sensing reaction of a specific gas through doping/loading the sensor material with oxide or noble metal catalysts. The junction between p- and n-type oxide semiconductors fabricated with different contact configurations can provide new strategies for designing gas sensors. p-Type oxide semiconductors with distinctive surface reactivity and oxygen adsorption are also advantageous for enhancing gas selectivity, decreasing the humidity dependence of sensor signals to negligible levels, and improving recovery speed. Accordingly, p-type oxide semiconductors are excellent materials not only for fabricating highly sensitive and selective gas sensors but also valuable additives that provide new functionality in gas sensors, which will enable the development of high-performance gas sensors.

Original languageEnglish
Pages (from-to)607-627
Number of pages21
JournalSensors and Actuators, B: Chemical
Volume192
DOIs
Publication statusPublished - 2014 Mar 1

Fingerprint

Chemical sensors
oxides
sensors
gases
Gases
Doping (additives)
Oxygen
Adsorption
adsorption
Oxide semiconductors
Sensors
oxygen
Precious metals
noble metals
Oxides
Carrier concentration
metal oxides
humidity
Atmospheric humidity
depletion

Keywords

  • Gas sensor
  • p-n junction
  • p-Type oxide semiconductor
  • Selectivity
  • Sensitivity

ASJC Scopus subject areas

  • Instrumentation
  • Materials Chemistry
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

Cite this

Highly sensitive and selective gas sensors using p-type oxide semiconductors : Overview. / Kim, Hyo Joong; Lee, Jong Heun.

In: Sensors and Actuators, B: Chemical, Vol. 192, 01.03.2014, p. 607-627.

Research output: Contribution to journalArticle

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