Highly sensitive photoinduced current characteristics of π-conjugated dendrimer based organic thin film transistor

S. J. Kim, M. Y. Cho, K. Kim, J. Joo, K. H. Kim, M. J. Cho, D. H. Choi

Research output: Contribution to conferencePaper

Abstract

We fabricated organic thin film transistors (OTFTs) using soluble π-conjugated dendrimer such as 4(HP3T)-benzene and investigated current-voltage characteristics the OTFT devices with the condition of low light intensity. We observed the increase of the source-drain current under irradiation of light and the variation of the source-drain current with varying the energy of incident light. Using the current-voltage characteristics with light, we obtained photo-responsivity of devices. The photo-responsivity of our devices was relatively higher than that in previous reports.

Original languageEnglish
Pages1817-1819
Number of pages3
Publication statusPublished - 2007
Event14th International Display Workshops, IDW '07 - Sapporo, Japan
Duration: 2007 Dec 52007 Dec 5

Other

Other14th International Display Workshops, IDW '07
CountryJapan
CitySapporo
Period07/12/507/12/5

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials
  • Radiology Nuclear Medicine and imaging
  • Atomic and Molecular Physics, and Optics

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    Kim, S. J., Cho, M. Y., Kim, K., Joo, J., Kim, K. H., Cho, M. J., & Choi, D. H. (2007). Highly sensitive photoinduced current characteristics of π-conjugated dendrimer based organic thin film transistor. 1817-1819. Paper presented at 14th International Display Workshops, IDW '07, Sapporo, Japan.