Highly Stable, Dual-Gated MoS<inf>2</inf> Transistors Encapsulated by Hexagonal Boron Nitride with Gate-Controllable Contact, Resistance, and Threshold Voltage

Gwan Hyoung Lee, Xu Cui, Young Duck Kim, Ghidewon Arefe, Xian Zhang, Chul-Ho Lee, Fan Ye, Kenji Watanabe, Takashi Taniguchi, Philip Kim, James Hone

Research output: Contribution to journalArticle

135 Citations (Scopus)

Abstract

Emerging two-dimensional (2D) semiconductors such as molybdenum disulfide (MoS<inf>2</inf>) have been intensively studied because of their novel properties for advanced electronics and optoelectronics. However, 2D materials are by nature sensitive to environmental influences, such as temperature, humidity, adsorbates, and trapped charges in neighboring dielectrics. Therefore, it is crucial to develop device architectures that provide both high performance and long-term stability. Here we report high performance of dual-gated van der Waals (vdW) heterostructure devices in which MoS<inf>2</inf> layers are fully encapsulated by hexagonal boron nitride (hBN) and contacts are formed using graphene. The hBN-encapsulation provides excellent protection from environmental factors, resulting in highly stable device performance, even at elevated temperatures. Our measurements also reveal high-quality electrical contacts and reduced hysteresis, leading to high two-terminal carrier mobility (33-151 cm<sup>2</sup> V<sup>-1</sup> s<sup>-1</sup>) and low subthreshold swing (80 mV/dec) at room temperature. Furthermore, adjustment of graphene Fermi level and use of dual gates enable us to separately control contact resistance and threshold voltage. This novel vdW heterostructure device opens up a new way toward fabrication of stable, high-performance devices based on 2D materials.

Original languageEnglish
Pages (from-to)7019-7026
Number of pages8
JournalACS Nano
Volume9
Issue number7
DOIs
Publication statusPublished - 2015 Jul 28

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Boron nitride
Contact resistance
boron nitrides
Threshold voltage
threshold voltage
Transistors
transistors
Graphite
Graphene
Heterojunctions
electric potential
Carrier mobility
Adsorbates
Fermi level
graphene
Encapsulation
Optoelectronic devices
Temperature
Molybdenum
Hysteresis

Keywords

  • contact resistance
  • graphene
  • hexagonal boron nitride
  • MoS<inf>2</inf>
  • threshold voltage
  • two-dimensional materials
  • van der Waals heterostructure

ASJC Scopus subject areas

  • Engineering(all)
  • Materials Science(all)
  • Physics and Astronomy(all)

Cite this

Highly Stable, Dual-Gated MoS<inf>2</inf> Transistors Encapsulated by Hexagonal Boron Nitride with Gate-Controllable Contact, Resistance, and Threshold Voltage. / Lee, Gwan Hyoung; Cui, Xu; Kim, Young Duck; Arefe, Ghidewon; Zhang, Xian; Lee, Chul-Ho; Ye, Fan; Watanabe, Kenji; Taniguchi, Takashi; Kim, Philip; Hone, James.

In: ACS Nano, Vol. 9, No. 7, 28.07.2015, p. 7019-7026.

Research output: Contribution to journalArticle

Lee, Gwan Hyoung ; Cui, Xu ; Kim, Young Duck ; Arefe, Ghidewon ; Zhang, Xian ; Lee, Chul-Ho ; Ye, Fan ; Watanabe, Kenji ; Taniguchi, Takashi ; Kim, Philip ; Hone, James. / Highly Stable, Dual-Gated MoS<inf>2</inf> Transistors Encapsulated by Hexagonal Boron Nitride with Gate-Controllable Contact, Resistance, and Threshold Voltage. In: ACS Nano. 2015 ; Vol. 9, No. 7. pp. 7019-7026.
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