Highly Stable, Dual-Gated MoS<inf>2</inf> Transistors Encapsulated by Hexagonal Boron Nitride with Gate-Controllable Contact, Resistance, and Threshold Voltage

Gwan Hyoung Lee, Xu Cui, Young Duck Kim, Ghidewon Arefe, Xian Zhang, Chul-Ho Lee, Fan Ye, Kenji Watanabe, Takashi Taniguchi, Philip Kim, James Hone

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201 Citations (Scopus)

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